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    MIKROELEKTRONISCHES BAUELEMENT
    31.
    发明公开
    MIKROELEKTRONISCHES BAUELEMENT 审中-公开
    MICRO电子元件

    公开(公告)号：EP2558406A2

    公开(公告)日：2013-02-20

    申请号：EP11709422.7

    申请日：2011-03-22

    Applicant: IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik

    Inventor： KAYNAK, Mehmet ,  TILLACK, Bernd ,  SCHOLZ, René

    IPC: B81C1/00

    CPC classification number: B81C1/00587 ,  B81B2207/015 ,  B81B2207/07 ,  B81C2201/014

    Abstract: In a method for producing an MEMS component, wherein, in the course of producing the multilevel interconnect layer stack for connecting microelectronic circuits, micromechanical structure elements (7, 8, 9) that are to be exposed later are embedded at the same time, a cutout is subsequently produced from a substrate rear side (R) as far as the multilevel interconnect layer stack, and then the micromechanical structure elements in the multilevel interconnect layer stack are exposed through the cutout. In order to increase the process accuracy, as early as in the course of producing the multilevel interconnect layer stack or even in the front end of line, a reference mask (22) for defining a lateral position or a lateral extent of the micromechanical structure elements (7, 8, 9) to be exposed is produced, wherein the reference mask (22) is arranged on the substrate front side between the substrate and the multilevel interconnect layer stack or in a layer of the multilevel interconnect layer stack that is situated nearer to the substrate (1) in comparison with the structure element.

    Integrated released beam layer structure fabricated in trenches and manufacturing method thereof
    39.
    发明公开
    Integrated released beam layer structure fabricated in trenches and manufacturing method thereof 有权
    这是在沟槽产生集成释放堤层的结构和相应的制造方法

    公开(公告)号：EP1547969A2

    公开(公告)日：2005-06-29

    申请号：EP04257172.9

    申请日：2004-11-19

    Applicant: STMicroelectronics, Inc.

    Inventor： Blanchard, Richard A. ,  McAlexander, Joseph C.

    IPC: B81B3/00

    CPC classification number: B81C1/00626 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/014

    Abstract: A released beam structure fabricated in trench and manufacturing method thereof are provided herein. One embodiment of a released beam structure according to the present invention comprises a semiconductor substrate, a trench, a first conducting layer, and a beam. The trench extends into the semiconductor substrate and has walls. The first conducting layer is positioned over the walls of the trench at selected locations. The beam is positioned with the trench and is connected at a first portion thereof to the semiconductor substrate and movable at a second portion thereof. The second portion of the beam is spaced from the walls of the trench by a selected distance. Therefore, the second portion of the beam is free to move in a plane that is perpendicular or parallel to the surface of the substrate, and could be deflected to electrically contact with the walls of the trench in response to a predetermined acceleration force or a predetermined temperature variation applied on the beam structure. Other beam structures such as a beam held at both ends, or a beam held in the middle are also possible. Several beam structures at different angles can be fabricated simultaneously and mechanical etching stops are automatically formed to prevent unwanted overstress conditions when manufacturing several beam structures at the same time. Beam structures can also be manufactured in three orthogonal directions, providing information on acceleration in any direction.

    Abstract translation: 中提供了在其沟槽和制造方法制造的释放梁结构。 释放梁结构雅丁到本发明的一个实施例包括半导体衬底，形成沟槽，第一导电层，和一个光束。 所述沟槽延伸到所述半导体衬底和具有壁。 该第一导电层被定位在所述沟槽中的所选择的位置的壁。 束被定位成与所述沟槽和在其与半导体基板和可动的第一部分被连接在第二部分上。 光束的第二部分从所述沟槽的壁由选定的距离间隔开。 因此，梁的第二部分自由地在一个平面内移动并垂直于或平行于基板的表面上，并响应于预定的加速力或预定的可偏转以与所述沟槽的壁电接触 温度变化施加在梁结构。 其它的梁结构：因此，例如在两端保持的光束，或在中间保持的光束是可能的。 在不同角度的若干梁结构可以同时制造，并且机械蚀刻停止被自动形成，以防止不希望的过载条件下当在Sametime制造几个梁结构。 梁结构因此可以在三个正交方向上进行制造，在任何方向上提供的加速度信息。

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