公开(公告)号：EP3336942A4

公开(公告)日：2018-07-18

申请号：EP16834806

申请日：2016-07-29

申请人： JFE STEEL CORP

发明人： YANO TAKAYOSHI ,  ISHIKAWA SHIN ,  KAMI CHIKARA

IPC分类号： H01M8/0202 ,  C23C18/16 ,  C23C28/00 ,  C25D3/12 ,  C25D3/40 ,  C25D3/46 ,  C25D3/48 ,  C25D3/56 ,  C25D5/12 ,  C25D5/26 ,  C25D5/28 ,  C25D5/34 ,  C25D5/36 ,  C25D5/38 ,  C25D7/00 ,  C25D7/06 ,  C25D11/34 ,  C25D15/00 ,  H01M8/10

CPC分类号： H01M8/0228 ,  C23C18/1653 ,  C23C28/00 ,  C25D3/12 ,  C25D3/40 ,  C25D3/46 ,  C25D3/48 ,  C25D3/562 ,  C25D5/12 ,  C25D5/36 ,  C25D5/38 ,  C25D7/06 ,  C25D11/34 ,  C25D15/00 ,  H01M8/0202 ,  H01M8/0206 ,  H01M8/0215 ,  H01M8/10 ,  H01M8/1018 ,  H01M2008/1095 ,  Y02P70/56

摘要： A metal sheet for separators of polymer electrolyte fuel cells comprises: a substrate made of metal; and a surface-coating layer with which a surface of the substrate is coated, with a strike layer in between, wherein a coating ratio of the strike layer on the substrate is 2 % to 70 %, the strike layer is distributed in a form of islands, and a maximum diameter of the islands of the strike layer as coating portions is 1.00 µm or less and is not greater than a thickness of the surface-coating layer.

公开(公告)号：EP1728898B1

公开(公告)日：2017-02-22

申请号：EP06252811.2

申请日：2006-05-31

申请人： Rohm and Haas Electronic Materials LLC

发明人： Egli, Andre ,  Wong, Wing Kwong ,  Kwok, Raymund W.M. ,  Heber, Jochen

IPC分类号： C25D3/62 ,  C25D3/48

CPC分类号： C25D3/62 ,  C25D5/18

公开(公告)号：EP2879173A3

公开(公告)日：2015-08-26

申请号：EP13194235.1

申请日：2013-11-25

申请人： Chipmos Technologies Inc.

发明人： Cheng, Shih Jye ,  Lu, Tung Bao

IPC分类号： H01L23/485 ,  H01L21/60 ,  C25D3/64 ,  C25D3/48

CPC分类号： H01L21/4825 ,  H01L23/15 ,  H01L23/49816 ,  H01L23/4985 ,  H01L23/49866 ,  H01L23/49894 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05027 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05541 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/11848 ,  H01L2224/11901 ,  H01L2224/13005 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/1357 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/814 ,  H01L2224/8159 ,  H01L2224/8169 ,  H01L2224/81744 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2224/81862 ,  H01L2224/83104 ,  H01L2924/01322 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/0655 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/1146

摘要： A semiconductor structure includes a semiconductor device (100), a conductive pad (102) on the semiconductor device (100), and a Ag 1-x Y x alloy bump (101) over the conductive pad (102). The Y of the Ag 1-x Y x bump (101) comprises metals forming complete solid solution with Ag at arbitrary weight percentage (Au and/or Pd), and the x of the Ag 1-x Y x alloy bump (101) is in a range of from about 0.005 to about 0.25. A difference between standard deviation and mean value of a grain size distribution of the Ag 1-x Y x alloy bump (101) is in a range of from about 0.2 µm to about 0.4 µm. An average grain size of the Ag 1-x Y x alloy bump (101) on a longitudinal cross sectional plane is in a range of from about 0.5 µm to about 1.5 µm. The alloy bump (101) is formed by electroplating.

公开(公告)号：EP2879169A3

公开(公告)日：2015-08-26

申请号：EP13194234.4

申请日：2013-11-25

申请人： Chipmos Technologies Inc.

发明人： Cheng, Shih Jye ,  Lu, Tung Bao

IPC分类号： H01L21/60 ,  C25D3/64 ,  C25D3/48 ,  H01L23/485

CPC分类号： H01L21/4853 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/742 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/039 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05027 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05541 ,  H01L2224/05576 ,  H01L2224/05578 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/11848 ,  H01L2224/119 ,  H01L2224/11901 ,  H01L2224/11906 ,  H01L2224/13005 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/1357 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/814 ,  H01L2224/8159 ,  H01L2224/8169 ,  H01L2224/81744 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2224/81862 ,  H01L2224/83104 ,  H01L2924/01322 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2224/1182 ,  H01L2924/0665 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/1146

摘要： The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a conductive pad (102) on a semiconductor die (100); forming a seed layer (105) over the conductive pad (102); defining a first mask layer (109) over the seed layer (105); and forming a silver alloy bump body (101) in the first mask layer (109). The forming a silver alloy bump body (101) in the first mask layer (109) includes operations of preparing a first cyanide-based bath (113); controlling a pH value of the first cyanide-based bath (113) to be within a range of from about 6 to about 8; immersing the semiconductor die (100) into the first cyanide-based bath (113); and applying an electroplating current density of from about 0.1 ASD to about 0.5 ASD to the semiconductor die (100). The silver alloy of the silver alloy bump body (101) comprises gold and/or palladium. The first cyanide-based bath (113) comprises KAg(CN) 2 , KAu(CN) 2 and/or K 2 Pd(CN) 4 .

摘要翻译： 本公开提供了一种用于制造半导体结构的方法。 该方法包括在半导体管芯（100）上形成导电垫（102）; 在导电垫（102）上形成种子层（105）; 在所述种子层（105）上方界定第一掩模层（109）; 以及在第一掩模层（109）中形成银合金凸块体（101）。 在第一掩模层（109）中形成银合金凸块体（101）包括制备第一氰化物基浴（113）的操作; 将所述第一氰化物基浴（113）的pH值控制在约6至约8的范围内; 将半导体管芯（100）浸入第一氰化物基浴（113）中; 以及将约0.1ASD至约0.5ASD的电镀电流密度施加至半导体管芯（100）。 银合金凸块体（101）的银合金包含金和/或钯。 第一氰化物基浴（113）包含KAg（CN）2，KAu（CN）2和/或K 2 Pd（CN）4。

公开(公告)号：EP2475496A1

公开(公告)日：2012-07-18

申请号：EP10768797.2

申请日：2010-09-08

申请人： Astron Advanced Materials Limited

发明人： SEDDON, Kenneth ,  SRINIVASEN, Geetha ,  WILSON, Anthony

IPC分类号： B23K35/26 ,  C25D3/48 ,  C25D3/54 ,  C25D3/66

CPC分类号： B23K35/26 ,  C25D3/665 ,  C25D5/50 ,  C25D5/505

摘要： The present invention relates to a low temperature process for producing and joining metal substrates using an intermediate layer comprising indium or gallium, wherein the indium or gallium layer is formed by electrodeposition from an ionic liquid comprising an indium or gallium salt.

公开(公告)号：EP1728898A3

公开(公告)日：2012-04-18

申请号：EP06252811.2

申请日：2006-05-31

申请人： Rohm and Haas Electronic Materials LLC

发明人： Egli, Andre ,  Wong, Wing Kwong ,  Kwok, Raymund W.M. ,  Heber, Jochen

IPC分类号： C25D3/48

CPC分类号： C25D3/62 ,  C25D5/18

摘要： Compositions and methods for depositing gold alloys are disclosed. The compositions include certain dithiocarboxylic acids, salts and esters thereof and mercapto group containing compounds which provide bright gold alloy deposits with uniform color.

公开(公告)号：EP2313541A1

公开(公告)日：2011-04-27

申请号：EP10724310.7

申请日：2010-06-09

申请人： COVENTYA S.p.A.

发明人： SCHMIDBAUR, Hubert ,  DUPRAT, Jean-Jacques ,  ROSSI, Davide ,  FALLETTA, Ester

IPC分类号： C25D3/48 ,  C25D3/62

CPC分类号： C25D3/48 ,  C25D3/62

摘要： The invention relates to a cyanide-free electrolyte for galvanic deposition of gold or alloys thereof, which has a neutral or alkaline aqueous solution of at least one gold complex and possibly of a complex of an alloy former for gold, the complexes being present in anionic form. The electrolyte according to the invention is used in galvanic deposition, in particular for coatings made of gold and alloys thereof.

公开(公告)号：EP1956117A1

公开(公告)日：2008-08-13

申请号：EP08002371.6

申请日：2008-02-08

申请人： Wieland Dental + Technik GmbH & Co. KG

发明人： Neye, Helmut

IPC分类号： C25D3/48 ,  C25D3/62 ,  A61C13/08 ,  C25D5/02

CPC分类号： C25D3/48 ,  A61C13/0012 ,  C25D3/62 ,  C25D5/02 ,  C25D7/04

摘要： Bei einem Verfahren zur galvanischen Abscheidung von Gold oder Goldlegierungen aus einem Elektrolyten erfolgt die Abscheidung aus einem Elektrolyten hoher Viskosität. Dieses Verfahren ist insbesondere zur nachträglichen Galvanisierung von Sekundärkronen bzw. Außenteleskopen von sogenannten Teleskop-Prothesen geeignet, wobei der Elektrolyt vorzugsweise ausschließlich in das von der Innenfläche der Sekundärkrone begrenzte Volumen eingebracht ist.
Die Erfindung umfaßt auch den Elektrolyten selbst, der zur Bereitstellung einer hohen Viskosität mindestens ein Verdickungsmittel, insbesondere mindestens ein organisches Verdickungsmittel, enthält.

摘要翻译： 将金或金合金从电镀浴或电解质沉积到可伸缩假体装置的次级冠和外望远镜上的方法包括从高粘度的电解质沉积金或金合金，并将其插入由 表冠的内表面。 还包括用于电解沉积含有有机增稠剂的金或金合金用于制备电解质的高粘度的电解质的独立权利要求。

公开(公告)号：EP1146147A4

公开(公告)日：2006-08-16

申请号：EP99974108

申请日：1999-10-07

申请人： TANAKA PRECIOUS METAL IND

发明人： KITADA KATSUTSUGU ,  SHINDO YOSHIRO

IPC分类号： C25D3/48

CPC分类号： C25D3/48

摘要： An electrolytic gold plating liquid which employs either gold compound of a gold salt or a gold complex as a gold source and contains a buffer, an organic gloss agent and a conductive salt, wherein a non-cyan electrolytic gold plating liquid characterized by containing 1,2-ethanediamine is employed. The gold plating liquid provides a gold plating bath having extremely excellent solution stability, and is free from the change of physical properties of a gold metal precipitate or the decomposition of a gold plating liquid during gold plating operation, and further allows controlling the hardness, purity, crystal properties and the like of a gold metal precipitate. Accordingly, this gold plating liquid provides an electrolytic gold plating liquid superior to all of those conventionally and currently used. This gold plating liquid can be produced by employing, as a gold source, either of bis(1,2-ethane diamine) gold complex and a gold salt.

公开(公告)号：EP1198623B1

公开(公告)日：2003-03-19

申请号：EP00929531.2

申请日：2000-05-16

申请人： W.C. Heraeus GmbH & Co. KG ,  Hoffacker, Gerhard

发明人： HOFFACKER, Gerhard ,  FRANZ, Renate ,  REITZ, Ramona ,  WALTER, Richard

IPC分类号： C25D3/48

CPC分类号： C25D3/48

摘要： The invention relates inter alia to a method for producing a cyanide-free solution of a gold compound that is suitable for galvanic gold baths. Said method comprises the following steps: a) reacting a cysteine and/or a cysteinate with a tetrachloroauric acid and/or a tetrachloroauric salt in a first aqueous medium; b) separating the resulting precipitate from the first aqueous medium; and c) dissolving said precipitate in a second aqueous medium, increasing the pH value to 12.0 to 14.0.