公开(公告)号：EP0778249A1

公开(公告)日：1997-06-11

申请号：EP96916346.8

申请日：1996-06-07

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： KOMATSU, Michiyasu 262-32-1-213, Kamigo-cho ,  IKEDA, Kazuo 2925-1, Kamiyabe-cho ,  MIZUNOYA, Nobuyuki O-302 ,  SATO, Yoshitoshi 18-8-513, Higashi-cho ,  IMAIZUMI, Tatsuya 1-10-1-807, Takasago-cho ,  KONDO, Kazuyuki 2-14-10-420, Shinkoyasu

IPC分类号： C04B35/58 ,  H01L21/52 ,  H01L23/12

CPC分类号： H01L24/33 ,  C04B35/584 ,  C04B35/5935 ,  H01L23/15 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01064 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01105 ,  H01L2924/04953 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/3512 ,  H01L2924/00

摘要： A high thermal conductive silicon nitride sintered body of this invention is characterized by containing more than 7.5 wt% to at most 17.5 wt% of a rare earth element in terms of the amount of an oxide thereof, if necessary, at most 1.0 wt% of at least one of aluminum nitride and alumina, if necessary, 0.1-3.0 wt% of at least one compound selected from the group consisting of oxides, carbides, nitrides, silicides and borides of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W, and at most 0.3 wt% of Li, Na, K, Fe, Ca, Mg, Sr, Ba, Mn and B as impurity cationic elements in terms of total amount thereof, containing a β -type silicon nitride crystal and a grain boundary phase. The sintered body has a ratio of a crystal compound phase in the grain boundary phase to the entire grain boundary phase of at least 20%, a porosity of at most 2.5% by volume, a thermal conductivity of at least 80 W/m · K and a three-point bending strength of at least 650 MPa at a room temperature. According to the above arrangement, a silicon nitride sintered body having, in addition to the high strength characteristics generally inherent in silicon nitride sintered body, high thermal conductivity and good heat-radiating characteristics can be obtained. A press-contacted body according to the present invention is constituted such that a heat-generating part is press-contacted to a heat-radiating plate consisting of the silicon nitride sintered body.

摘要翻译： 本发明的高导热性氮化硅质烧结体，其特征在于，以氧化物换算含有7.5重量％以上17.5重量％以下的稀土类元素，根据需要含有1.0重量％以下 氮化铝和氧化铝中的至少一种，如果需要，选自0.1-3.0重量％的至少一种选自Ti，Zr，Hf，V，Nb，Ta的氧化物，碳化物，氮化物，硅化物和硼化物的化合物， Cr，Mo和W，并且至多0.3重量％的作为杂质阳离子元素的Li，Na，K，Fe，Ca，Mg，Sr，Ba，Mn和B以总量计包含β型氮化硅 晶体和晶界相。 烧结体的晶界相中的结晶化合物相与晶界相的整体相的比例为20％以上，气孔率为2.5体积％以下，导热率为80W / m·K 在室温下具有至少650MPa的三点弯曲强度。 根据上述结构，除了氮化硅烧结体通常固有的高强度特性以外，还可以得到具有高导热性和良好的散热特性的氮化硅烧结体。 根据本发明的压接体被构造成使得发热部分与由氮化硅烧结体构成的散热板压接。

公开(公告)号：EP0645810A1

公开(公告)日：1995-03-29

申请号：EP94912058.8

申请日：1994-04-06

申请人： TOKUYAMA CORPORATION

发明人： MIYAHARA, Kenichiro

IPC分类号： H01L23/04 ,  H01L23/50

CPC分类号： H01L23/057 ,  H01L23/3675 ,  H01L23/49537 ,  H01L23/49822 ,  H01L23/50 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2224/85099 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/20102 ,  H01L2924/20753 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/20109 ,  H01L2924/00012

摘要： A package for a semiconductor chip having the following features: (a) a power-supply layer, a ground layer, and a signal layer are formed in multilayer through intermediate layers including insulating layers; (b) the power-supply layer and ground layer each comprise an inner lead region exposed from the intermediate layers, an outer lead region, and a conductive region sandwiched by these two regions and covered by the intermediate layers; and (c) the conductive regions of the power-supply layer and ground layer consist of planar conductive members. The self-inductances of the power-supply and ground layers of this package are low, and the capacitance of the capacitor formed by these layers is low. Therefore, the noise of the power-supply system is little.

摘要翻译： 一种具有以下特征的半导体芯片的封装：（a）电源层，接地层和信号层，形成为包括绝缘层在内的多层中间层; （b）电源层和接地层各自包括从中间层露出的内引线区域，外引线区域和被这两个区域夹持并被中间层覆盖的导电区域; 和（c）电源层和接地层的导电区域由平面导电构件构成。 该封装的电源和接地层的自感电位低，由这些层形成的电容器的电容低。 因此，电源系统的噪音很小。