公开(公告)号：EP2273538B1

公开(公告)日：2012-09-26

申请号：EP10184650.9

申请日：2006-11-17

申请人： Intel Corporation

发明人： Brask, Justin, K ,  Datta, Suman ,  Doczy, Mark, L ,  Blackwell, James, M ,  Metz, Matthew, V ,  Kavalieros, Jack, T. ,  Chau, Robert, S

IPC分类号： H01L21/314 ,  H01L29/51 ,  H01L21/28 ,  H01L21/335 ,  H01L29/49 ,  H01L29/788 ,  H01L21/316 ,  H01L29/20

CPC分类号： H01L21/314 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/28008 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31645 ,  H01L29/2003 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7784

摘要： A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.

公开(公告)号：EP1452619B1

公开(公告)日：2011-09-14

申请号：EP02768137.8

申请日：2002-09-30

申请人： National Institute of Advanced Industrial Science and Technology

发明人： FUKUHISA, Koji, c/o Advanced Systems of Technology ,  NAKAJIMA, Akira, c/o Adv. Systems of Technology ,  SHINOHARA, Kenji, c/o Adv. Systems of Technology ,  WATANABE, Toshiya ,  OHSAKI, Hisashi ,  SERIKAWA, Tadashi

IPC分类号： C23C8/36 ,  C23C14/08 ,  C23C14/58 ,  C23C18/14 ,  H01L21/316 ,  C01B13/28 ,  H01L21/52

CPC分类号： C01B13/145 ,  C01P2002/01 ,  C01P2004/03 ,  C23C8/02 ,  C23C8/36 ,  C23C14/08 ,  C23C14/083 ,  C23C14/086 ,  C23C14/5826 ,  C23C18/14 ,  C23C26/00 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02356 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31691 ,  H01L31/022466 ,  H01L31/1884

摘要： A process for producing a thin film of a crystalline metal oxide, which comprises depositing a film of a metal oxide which is mainly amorphous and then subjecting it to a post-treatment in which the film is exposed to a low-temperature plasma in a high-frequency electric field at a temperature not higher than 180°C; and a thin film of a crystalline metal oxide produced by the process. By the process, a thin crystalline metal oxide film which is dense and homogeneous can be formed on a substrate at a low temperature without the need of a positive heat treatment. A thin metal oxide film having desirable properties can hence be formed even on a substrate having relatively low heat resistance without impairing the material properties of the substrate.

公开(公告)号：EP2222889A4

公开(公告)日：2010-12-29

申请号：EP08848424

申请日：2008-10-30

申请人： HCF PARTNERS L P

发明人： DAMERON ARRELAINE

IPC分类号： C23C16/00 ,  C23C16/04

CPC分类号： C23C16/403 ,  C23C16/04 ,  C23C16/45525 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31616

公开(公告)号：EP2033222A2

公开(公告)日：2009-03-11

申请号：EP07730120.8

申请日：2007-06-13

申请人： Silecs OY

发明人： RANTALA, Juha

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

摘要： A semiconductor device comprising a semiconductor substrate with a plurality of photodiodes arranged in the semiconductor substrate with interconnect layers defining apertures at the photo-diodes and a first polymer which fills the gaps such as to cover the photo-diode. Further, layers of color filters are arranged on top the gap filling polymer layer opposite to the photo-diodes and a second polymer arranged on the interconnect layers covers and planarizes and passivates the color filter layers. On top of the planarizing polymer there is a plurality of micro-lenses opposite to the color filters, and a third polymer layer is deposited on the microlenses for passivating the micro-lenses. According to the invention the polymer materials are comprised of a siloxane polymer which gives thermally and mechanically stable, high index of refraction, dense dielectric films exhibiting high-cracking threshold, low pore volume and pore size.

摘要翻译： 一种半导体器件，包括具有多个光电二极管的半导体衬底，所述多个光电二极管布置在所述半导体衬底中，具有在所述光电二极管处限定孔的互连层和填充所述间隙以覆盖所述光电二极管的第一聚合物。 此外，彩色滤光片层布置在与光电二极管相对的间隙填充聚合物层的顶部，并且布置在互连层上的第二聚合物覆盖并平坦化并钝化滤色器层。 在平坦化聚合物的顶部，存在与滤色器相对的多个微透镜，并且在微透镜上沉积第三聚合物层以钝化微透镜。 根据本发明，聚合物材料由提供热和机械稳定的高折射率的硅氧烷聚合物组成，表现出高裂纹阈值，低孔体积和孔径的致密介电膜。

公开(公告)号：EP1610393A4

公开(公告)日：2009-03-04

申请号：EP04721671

申请日：2004-03-18

申请人： HORIBA LTD ,  ROHM CO LTD ,  RENESAS TECH CORP

发明人： TOMINAGA KOJI ,  IWAMOTO KUNIHIKO ,  YASUDA T ,  NABATAME T

IPC分类号： H01L21/28 ,  H01L21/318 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/56 ,  H01L29/513 ,  H01L29/518

摘要： A high-quality semiconductor device is disclosed in which deterioration in transistor characteristics and increase of interfacial layer ascribable to a gate insulating film are suppressed. A method for manufacturing such a semiconductor device is also disclosed. The semiconductor device comprises an interfacial layer, a diffusion-suppressing layer and a high-dielectric-constant insulating film formed in this order on a surface of a silicon substrate.

摘要翻译： 公开了一种高质量的半导体器件，其中抑制了晶体管特性的劣化和归因于栅极绝缘膜的界面层的增加。 还公开了一种制造这种半导体器件的方法。 该半导体器件包括在硅衬底的表面上依次形成的界面层，扩散抑制层和高介电常数绝缘膜。

公开(公告)号：EP1633904B1

公开(公告)日：2009-02-11

申请号：EP04733869.4

申请日：2004-05-19

申请人： L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： JURSICH, Gregory, M. ,  INMAN, Ronald, S.

IPC分类号： C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  H01L21/316

CPC分类号： C23C16/45553 ,  C23C16/403 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31616 ,  H01L21/31645 ,  H01L21/318

公开(公告)号：EP1511070A3

公开(公告)日：2008-10-01

申请号：EP04104015.5

申请日：2004-08-20

申请人： Texas Instruments Incorporated

发明人： Hong, Qi-Zhong

IPC分类号： H01L21/02 ,  H01L23/522 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768

CPC分类号： H01L23/5223 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31616 ,  H01L21/31645 ,  H01L21/3185 ,  H01L28/55 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit capacitor is formed by first forming a first dielectric layer (25) over a semiconductor (10). A copper structure (35) is formed in the first dielectric layer (25) and a second dielectric layer (80) is formed over the copper structure (35). A metal containing layer (90) is formed over the second dielectric layer (80) and the copper structure (35) and a planar surface is formed by removing portions of the metal containing layer (90) and the second dielectric layer (80). The second dielectric layer (80) can comprise a high-k dielectric material. The metal containing layer can comprise two metal layers.

公开(公告)号：EP1605500A4

公开(公告)日：2007-03-21

申请号：EP03708659

申请日：2003-03-17

申请人： FUJITSU LTD

发明人： YAMAGUCHI MASAOMI

IPC分类号： H01L21/314 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  H01L21/28 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L29/51 ,  H01L29/78

CPC分类号： C23C16/308 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31616 ,  H01L21/31645 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6659

摘要： A method for manufacturing a semiconductor device in which a film of an oxide of Hf1-xAlx (0

摘要翻译： 一种用于制造半导体器件的方法，其中形成具有期望特性的Hf1-xAlx（0

公开(公告)号：EP1494965A2

公开(公告)日：2005-01-12

申请号：EP03727305.9

申请日：2003-04-15

申请人： Schott AG

发明人： BIECK, Florian ,  LEIB, Jürgen ,  MUND, Dietrich

IPC分类号： B81C1/00

CPC分类号： C03B19/00 ,  B81C1/00269 ,  B81C2203/019 ,  B81C2203/031 ,  C03C4/12 ,  C03C14/006 ,  C03C15/00 ,  C03C17/02 ,  C03C17/34 ,  C03C2214/16 ,  C03C2217/21 ,  C03C2217/77 ,  C03C2218/15 ,  C03C2218/32 ,  C03C2218/328 ,  C03C2218/33 ,  C03C2218/355 ,  C23C14/10 ,  H01L21/02129 ,  H01L21/02145 ,  H01L21/02161 ,  H01L21/02266 ,  H01L21/31616 ,  H01L21/31625 ,  H01L21/50 ,  H01L21/56 ,  H01L23/10 ,  H01L23/291 ,  H01L23/3114 ,  H01L23/49894 ,  H01L51/5203 ,  H01L51/5246 ,  H01L51/5262 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/3011 ,  H05K3/28 ,  Y10T428/30 ,  Y10T428/31 ,  H01L2924/00

摘要： The aim of the invention is to provide a method for producing microstructures in glass or in glass-like layers. To this end, an auxiliary substrate (10, 20) having a structured surface (20a) is used, whereby the surface defines a negative mold for the product to be produced. A layer (30) made of glass or of a glass-like material is vapor-deposited onto the structured surface (20a) of the auxiliary substrate. The auxiliary substrate is subsequently removed, e.g. by using wet-chemical techniques, whereby exposing the positive structure. The invention enables the excellent production of microchannels and optical microstructures such as microlenses.

摘要翻译： 本发明是基于提供用于制造玻璃或层的微观结构类似于玻璃的处理的对象上。

公开(公告)号：EP1454879A1

公开(公告)日：2004-09-08

申请号：EP02788766.0

申请日：2002-12-10

申请人： National Institute of Advanced Industrial Science and Technology

发明人： YASUDA, T., Nat. Inst. of Advanced Ind. Science & ,  NISHIZAWA, M., Nat. Inst. of Advanced Ind. Science ,  YAMASAKI, S., Nat. Inst. of Advanced Ind. Science

IPC分类号： C01B13/14 ,  C01B13/32 ,  C01B33/12 ,  H01L29/78 ,  H01L21/316

CPC分类号： C23C30/00 ,  C23C8/02 ,  C23C8/16 ,  C23C26/00 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3165

摘要： In a method of manufacturing oxide thin film by adsorbing or depositing oxide forming starting material on a substrate followed by oxide formation, by using water in a liquid state to manufacture the oxide thin film, the advantages of the ALD method are utilized while resolving the tendency to leave impurities in the oxide film produced that is a drawback thereof, so that oxide thin film can be obtained having a reduced concentration of impurities.

摘要翻译： 在通过在基板上吸附或沉积氧化物形成原料而形成氧化物的方法中，通过使用液态的水来制造氧化物薄膜，利用ALD方法的优点，同时解决倾向 在所生产的氧化膜中留下杂质是其缺点，从而可以获得具有降低的杂质浓度的氧化物薄膜。