公开(公告)号：EP0661782A1

公开(公告)日：1995-07-05

申请号：EP94120673.2

申请日：1994-12-27

申请人： NEC CORPORATION

发明人： Tada, Kentaro, c/o NEC Corporation ,  Yamazaki, Hiroyuki, c/o NEC Corporation

IPC分类号： H01S3/19 ,  H01L33/00

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/3415

摘要： It is the object of the invention to provide a semiconductor laser with a low threshold lasing current and a high external differential quantum efficiency. A n-type AlGaInP clad layer 2, a AlGaInP MQW active layer 3, a p-type AlGaInP clad layer 4, p-type GaInP hetero-buffer layer 5 and a-type GaAs layer 6 are successively grown on a n-type GaAs substrate 1, wherein Al contents of a barrier in the MQW layer 3 is so varied that holes are uniformly distributed in each quantum well. Next, a mesa is formed by an etching process, then a n-type GaAs block layer 7 is grown, and electrodes are formed on both p and n-side surfaces. Finally, the processed substrate is cleaved, and laser diodes are obtained therefrom. An Al content of the barrier layer in the MQW active layer 3 is slowly decreased from a p-side to a n-side, and thereby holes are uniformly distributed in each quantum well and few electrons overflow a quantum well.

摘要翻译： 本发明的目的是提供一种具有低阈值激光电流和高外部差分量子效率的半导体激光器。 在n型GaAs上依次生长n型AlGaInP包覆层2，AlGaInP MQW活性层3，p型AlGaInP包覆层4，p型GaInP异质缓冲层5和a型GaAs层6 衬底1，其中MQW层3中势垒的Al含量如此变化，以致空穴在每个量子阱中均匀分布。 接下来，通过蚀刻工艺形成台面，然后生长n型GaAs阻挡层7，并且在p和n侧表面上都形成电极。 最后，处理后的衬底被切割，并从中获得激光二极管。 MQW活性层3中的势垒层的Al含量从p侧向n侧缓慢降低，空穴在各量子阱中均匀分布，少量电子溢出量子阱。

公开(公告)号：EP0647001A1

公开(公告)日：1995-04-05

申请号：EP94115373.6

申请日：1994-09-29

申请人： CANON KABUSHIKI KAISHA

发明人： Nishimura, Michiyo, c/o Canon Kabushiki Kaisha

IPC分类号： H01S3/19 ,  H01S3/25

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3404 ,  H01S5/3407 ,  H01S5/5009

摘要： A semiconductor optical amplifier comprises a substrate (1) and an active layer (4) constructed as a quantum well structure. The active layer includes a plurality of well layers (14,15) and a plurality of barrier layers (13a,13c) which are alternately layered. The composition of each well layer (14,15) is such that the well layers have different quantum levels. The barrier layers are subjected to biaxial strain to shift the energy band structures so as to eliminate the polarization dependency of optical gain in the active region.

摘要翻译： 半导体光放大器包括衬底（1）和构造为量子阱结构的有源层（4）。 有源层包括交替层叠的多个阱层（14,15）和多个势垒层（13a，13c）。 每个阱层（14,15）的组成使得阱层具有不同的量子水平。 阻挡层经受双轴应变以移动能带结构，以消除有源区中光增益的偏振依赖性。

公开(公告)号：EP0645858A2

公开(公告)日：1995-03-29

申请号：EP94115205.0

申请日：1994-09-27

申请人： CANON KABUSHIKI KAISHA

发明人： Nitta, Jun

IPC分类号： H01S3/19 ,  H01L33/00 ,  H01S3/103 ,  G02F1/015

CPC分类号： H01L33/06 ,  B82Y20/00 ,  G02F1/017 ,  G02F1/01708 ,  G02F2001/0157 ,  G02F2001/01766 ,  G02F2203/07 ,  H01S5/0424 ,  H01S5/06203 ,  H01S5/06236 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3404 ,  H01S5/3407 ,  H01S5/3408

摘要： A strained quantum well structure comprises a substrate, and a strained quantum well. The strained quantum well has at least one well layer and a plurality of barrier layers. The well layer is sandwiched by the barrier layers. At least a portion of the well layer and the barrier layers is composed of semiconductor crystal whose amount of strain is distributed, and the band structure of the quantum well is constructed so that the transition in the quanrum well layer can be exchanged between states in which first polarization-state, typically transverse electric, transition is dominant and in which second polarization-state, typically transverse magnetic, transition is dominant.

摘要翻译： 应变的量子阱结构包括底物和应变的量子阱。 应变的量子阱具有至少一个阱层和势垒层的复数。 阱层是由势垒层夹在中间。 至少在阱层和势垒层的一部分由半导体晶体分布式应变的是谁的量，并且所述量子阱的能带结构以及被构造成没有在quanrum阱层中的过渡可以状态之间哪个被交换 第一偏振状态下，典型地横向电场，过渡是主导优势，并且其中第二偏振状态下，典型地横向磁场，过渡。

公开(公告)号：EP0400559A3

公开(公告)日：1991-12-27

申请号：EP90110127.9

申请日：1990-05-29

申请人： HITACHI, LTD.

发明人： Uomi, Kazuhisa ,  Sasaki, Shinji ,  Tsuchiya, Tomonobu ,  Chinone, Naoki ,  Ohtoshi, Tsukuru

IPC分类号： H01L29/15 ,  H01L31/0352 ,  H01L33/00 ,  H01S3/19 ,  H01S3/06

CPC分类号： H01S5/34 ,  B82Y20/00 ,  G02F1/017 ,  G02F1/01708 ,  H01L31/035236 ,  H01L33/06 ,  H01S5/06213 ,  H01S5/0622 ,  H01S5/12 ,  H01S5/125 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/32 ,  H01S5/3211 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434

摘要： An improvement for a semiconductor optical device having a region in which semiconductor or carriers in the semi­conductor and light interact, for example, an active region for a semiconductor laser, an optical wave guide region of an optical modulator, etc. resides in a quantum well structure comprising a well region and a barrier region. A semiconductor optical device is remarkably improved in the degree of freedom of its design such as thickness and selection of material without deteriorating the quantum effect, by introducing a super lattice super-layer structure into the barrier region of the quantum well structure or defining the strain for the well region and the barrier region.

公开(公告)号：EP0337470A2

公开(公告)日：1989-10-18

申请号：EP89106647.4

申请日：1989-04-13

申请人： OMRON TATEISI ELECTRONICS CO.

发明人： Imamoto, Hiroshi Omron Tateisi Electronics Co.

IPC分类号： H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/3407 ,  H01S5/34313 ,  H01S5/3432

摘要： In a laser having a separately confined heterostructure (SCH), a barrier layer (4) is constituted with a superlattice of AlGaAs/GaAs each comprising two to five molecular layers such that the leakage of injection carriers is decreased, that a steep heterojunction plane is attained, and an active layer (5) of a high quality is obtained, which leads to expectations for improvement of the temperature characteristic and the threshold current.

摘要翻译： 在具有单独限制的异质结构（SCH）的激光器中，阻挡层（4）由AlGaAs / GaAs的超晶格构成，每个包含2至5个分子层，使得注入载流子的泄漏减小，陡峭的异质结面为 获得了高质量的有源层（5），这导致对温度特性和阈值电流的改善的期望。

公开(公告)号：EP0232431A4

公开(公告)日：1988-01-26

申请号：EP86905398

申请日：1986-08-29

申请人： HITACHI LTD

发明人： KURODA TAKAO ,  WATANABE AKIYOSHI ,  TSUJI SHINJI ,  OHISHI AKIO ,  MATSUMURA HIROYOSHI

IPC分类号： H01S5/00 ,  B82Y20/00 ,  H01L29/15 ,  H01L29/80 ,  H01L31/10 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L29/155 ,  H01S5/3407 ,  H01S5/343 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/3436 ,  H01S5/34366

摘要： A novel method of easily forming a quaternary group III-V crystal on the group III-V crystal maintaining the lattice superposition relative to the group III-V crystal. It is easy to form a superlattice that consists of a first binary group III-V (written as III1-V1) crystal layer and a ternary group III-V (III1-III2-V2) crystal layer on a substrate of group III-V crystal both maintaining lattice superposition with the substrate. A stabler superlattice layer is obtained if the ratio of film thickness of the III1-V1 crystal to that of the III1-III2-V2 crystal is so selected that the compositions thereof maintain the lattice superposition with the original crystal when the superlattice forms a mixed crystal spontaneously or being doped with impurities.

公开(公告)号：EP2786457B1

公开(公告)日：2018-09-19

申请号：EP12854434.3

申请日：2012-11-29

申请人： Ricoh Company, Ltd.

发明人： SUZUKI, Ryoichiro ,  SATO, Shunichi

IPC分类号： H01S5/183 ,  H03L7/26 ,  H01S5/042 ,  H01S5/40 ,  H01S5/42 ,  B82Y20/00 ,  G04F5/14 ,  H01S5/026 ,  H01S5/20 ,  H01S5/343

CPC分类号： H01S5/187 ,  B82Y20/00 ,  G04F5/145 ,  H01S5/026 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18344 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2086 ,  H01S5/3407 ,  H01S5/34313 ,  H01S5/34373 ,  H01S5/4087 ,  H01S5/42 ,  H01S5/423 ,  H01S2301/166 ,  H01S2301/176 ,  H03B17/00 ,  H03L7/26

摘要： Disclosed is a surface-emitting laser element including a semiconductor substrate and plural surface-emitting lasers configured to emit light mutually different wavelengths, each surface-emitting laser including a lower Bragg reflector provided on the semiconductor substrate, a resonator provided on the lower Bragg reflector, an upper Bragg reflector provided on the resonator, and a wavelength adjustment layer provided in the upper Bragg reflector or lower Bragg reflector, the wavelength adjustment layers included in the surface-emitting lasers having mutually different thicknesses, at least one of the wavelength adjustment layers including adjustment layers made of two kinds of materials, and numbers of the adjustment layers included in the wavelength adjustment layers being mutually different.

公开(公告)号：EP3361584A1

公开(公告)日：2018-08-15

申请号：EP18155124.3

申请日：2018-02-05

申请人： STANLEY ELECTRIC CO., LTD.

发明人： TAZAWA, Komei ,  LIANG, Ji-Hao ,  KOBAYASHI, Seiichiro

IPC分类号： H01S5/183 ,  H01S5/343 ,  H01S5/20 ,  H01L33/10 ,  H01L33/32 ,  H01S5/042 ,  H01L33/00

CPC分类号： H01S5/2205 ,  H01L33/105 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18352 ,  H01S5/18369 ,  H01S5/2013 ,  H01S5/3407 ,  H01S5/34333 ,  H01S5/34346

摘要： A vertical-cavity light-emitting element includes: a first reflector (13); a semiconductor structure layer including a first semiconductor layer (15), an active layer (17), a second semiconductor layer (18), and a third semiconductor layer (19a) that are sequentially provided on the first reflector; a transparent electrode (23) on the third semiconductor layer; and a second reflector (25) on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film (20) provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer (21) on the insulating film to surround the mesa structure and define a through opening.

公开(公告)号：EP2603959A4

公开(公告)日：2018-01-03

申请号：EP11816734

申请日：2011-06-03

申请人： WISCONSIN ALUMNI RES FOUNDATION

发明人： BOTEZ DAN ,  SHIN JAE CHEOL

IPC分类号： H01S5/34

CPC分类号： H01L29/122 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3402 ,  H01S5/3407

摘要： Semiconductor structures and laser devices including the semiconductor structures are provided. The semiconductor structures have a quantum cascade laser (QCL) structure including an electron injector, an active region, and an electron extractor. The active region of the semiconductor structures includes a configuration of quantum wells and barriers that virtually suppresses electron leakage, thereby providing laser devices including such structures with superior electro-optical characteristics.

公开(公告)号：EP3193378A1

公开(公告)日：2017-07-19

申请号：EP16199936.2

申请日：2016-11-22

申请人： Sharp Kabushiki Kaisha ,  The University of Tokyo

发明人： KOTANI, Teruhisa ,  ARAKAWA, Yasuhiko

IPC分类号： H01L33/16 ,  H01L33/32 ,  H01S5/323

CPC分类号： H01S5/3401 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3215 ,  H01S5/3218 ,  H01S5/3407 ,  H01S5/3422 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2302/02

摘要： A nitride semiconductor device includes a GaN substrate (11) in which an angle between a principal surface and an m-plane of GaN is -5° or more and +5° or less, a first intermediate layer (101) disposed on the principal surface of the substrate (11) and made of Al z Ga (1-z) N (0 ≤ z ≤ 1), and a second intermediate layer (102) disposed on a principal surface of the first intermediate layer (101), having an Al content different from that of the first intermediate layer (101), and made of Al x1 In y1 Ga (1-x1-y1) (0 ≤ x1 ≤ 1, 0 ≤ y1 ≤ 1). A quantum cascade laser (10) includes the nitride semiconductor device.

摘要翻译： 本发明提供一种氮化物半导体装置，其特征在于，具备GaN基板（11），该GaN基板（11）的GaN的主面与m面的角度为-5°以上且+ 5°以下，第一中间层（101） （1）的表面由AlzGa（1-z）N（0≤z≤1）制成，第二中间层（102）设置在第一中间层（101）的主表面上，具有Al 含量不同于第一中间层（101）的含量，并由Al x1 In y1 Ga（1-x1-y1）（0≤x1≤1,0≤y1≤1）制成。 量子级联激光器（10）包括氮化物半导体器件。