摘要:
There are disclosed herein various implementations of a system-in-package with integrated socket. In one such implementation, the system-in-package (100) includes a first active die (110) having a first plurality of electrical connectors on a top surface of the first active die, an interposer (130) situated over the first active die, and a second active die (120) having a second plurality of electrical connectors on a bottom surface of the second active die. The interposer is configured to selectively couple at least one of the first plurality of electrical connectors to at least one of the second plurality of electrical connectors. In addition, a socket (160) encloses the first and second active dies and the interposer, the socket being electrically coupled to at least one of the first active die, the second active die, and the interposer.
摘要:
There are disclosed herein various implementations of a shield interposer situated between a top active die and a bottom active die for shielding the active dies from electromagnetic noise. One implementation includes an interposer dielectric layer, a through-silicon via (TSV) within the interposer dielectric layer, and an electromagnetic shield. The TSV connects the electromagnetic shield to a first fixed potential. The electromagnetic shield may include a grid of conductive layers laterally extending across the shield interposer. The shield interposer may also include another electromagnetic shield connected to another fixed potential.
摘要:
An exemplary implementation of the present disclosure includes a stacked package having a top die from a top reconstituted wafer situated over a bottom die from a bottom reconstituted wafer. The top die and the bottom die are insulated from one another by an insulation arrangement. The top die and the bottom die are also interconnected through the insulation arrangement. The insulation arrangement can include a top molding compound that flanks the top die and a bottom molding compound that flanks the bottom die. The top die and the bottom die can be interconnected through at least the top molding compound. Furthermore, the top die and the bottom die can be interconnected through a conductive via that extends within the insulation arrangement.
摘要:
There are disclosed herein various implementations of a shield interposer situated between a top active die and a bottom active die for shielding the active dies from electromagnetic noise. One implementation includes an interposer dielectric layer, a through-silicon via (TSV) within the interposer dielectric layer, and an electromagnetic shield. The TSV connects the electromagnetic shield to a first fixed potential. The electromagnetic shield may include a grid of conductive layers laterally extending across the shield interposer. The shield interposer may also include another electromagnetic shield connected to another fixed potential.
摘要:
An exemplary implementation of the present disclosure includes a testable semiconductor package (100) that includes an active die (102) having interface contacts (112a-112c) and dedicated testing contacts (114a, 114b). An interposer (104) is situated adjacent a bottom surface (116a) of the active die (102), the interposer (104) providing electrical connections between the interface contacts (112a-112c) and a bottom surface (118a) of the testable semiconductor package. At least one conductive medium provides electrical connection between at least one of the dedicated testing contacts (114a, 114b) and a top surface (118b) of the testable semiconductor package. The at least one conductive medium can be coupled to a package-top testing connection (108a, 108b), which may include a solder ball.
摘要:
An exemplary implementation of the present disclosure includes a testable semiconductor package (100) that includes an active die (102) having interface contacts (112a-112c) and dedicated testing contacts (114a, 114b). An interposer (104) is situated adjacent a bottom surface (116a) of the active die (102), the interposer (104) providing electrical connections between the interface contacts (112a-112c) and a bottom surface (118a) of the testable semiconductor package. At least one conductive medium provides electrical connection between at least one of the dedicated testing contacts (114a, 114b) and a top surface (118b) of the testable semiconductor package. The at least one conductive medium can be coupled to a package-top testing connection (108a, 108b), which may include a solder ball.
摘要:
There are disclosed herein various implementations of a system-in-package with integrated socket. In one such implementation, the system-in-package (100) includes a first active die (110) having a first plurality of electrical connectors on a top surface of the first active die, an interposer (130) situated over the first active die, and a second active die (120) having a second plurality of electrical connectors on a bottom surface of the second active die. The interposer is configured to selectively couple at least one of the first plurality of electrical connectors to at least one of the second plurality of electrical connectors. In addition, a socket (160) encloses the first and second active dies and the interposer, the socket being electrically coupled to at least one of the first active die, the second active die, and the interposer.