摘要:
Die Anmeldung betrifft ein Verfahren zur Herstellung eines Packages (1). Bei dem vorgeschlagenen Verfahren werden zunächst eine erste Bauteilanordnung (2) und eine zweite Bauteilanordnung (13) bereitgestellt. Die erste Bauteilanordnung (2) und die zweite Bauteilanordnung (13) weisen jeweils eine flächige Umverdrahtungslage (6, 16) und jeweils zumindest eine auf einer in Richtung einer Vorderseite der Bauteilanordnung (2, 13) weisenden Seite der Umverdrahtungslage (6, 16) angeordnete elektronische Komponente auf (11, 11', 17). Die Umverdrahtungslage (6, 16) weist elektrisch isolierendes Material (8) und Leiterbahnen (9, 9') auf. Zumindest eine der Leiterbahnen (9, 9') der Umverdrahtungslage (6, 16) ist mit der elektronischen Komponente (11, 11', 17) elektrisch leitend verbunden. In einem weiteren Schritt werden die Bauteilanordnungen (2, 13) derart zueinander angeordnet, dass die Vorderseiten der Bauteilanordnungen (2, 13) einander zugewandt sind und dass ein durch die Bauteilanordnungen (2, 13) begrenzter Zwischenraum (21) zwischen den Umverdrahtungslagen (6, 16) ausgebildet wird. In typischen Ausführungen wird ein Füllmaterial in den Zwischenraum eingebracht.
摘要:
Some features pertain to a package that includes a redistribution portion, a first die coupled to the redistribution portion, a core layer coupled to the redistribution portion, and an encapsulation layer encapsulating the first die and the core layer. The redistribution portion includes a first dielectric layer. The core layer has a higher Young's Modulus than the encapsulation layer. In some implementations, the core layer includes a glass fiber (e.g., core layer is a glass reinforced dielectric layer). In some implementations, the core layer has a Young's Modulus of about at least 15 gigapascals (Gpa). In some implementations, the first die includes a front side and a back side, where the front side of the first die is coupled to the redistribution portion. In some implementations, the first dielectric layer is a photo imageable dielectric (PID) layer.
摘要:
A semiconductor assembly with a package on package (POP) structure includes a first semiconductor package (100) having a first lower substrate (110), a first upper substrate (120) facing the first lower substrate, and a first semiconductor chip (130) mounted on an area of the first lower substrate. The POP structure further includes a second semiconductor package (200) having a second lower substrate (210) stacked on the first semiconductor package and spaced apart from the first semiconductor package, and a second semiconductor chip (220) mounted in an area of the second lower substrate. At least one passive element (301) is disposed in at least one of the first semiconductor package and the second semiconductor package and electrically connected to the second semiconductor chip.
摘要:
A substrate block is provided that has an increased width. The substrate block comprises two substrate bars, and the substrate bars each comprise a substrate and a plurality of filled vias through the substrate. The substrate block may be used to manufacture package substrates, and these package substrate may be incorporated into a PoP structure. The package substrate includes a carrier having a plurality of vertical interconnections and a bar coupled to the vertical interconnections.
摘要:
A semiconductor package assembly is provided. The semiconductor package assembly includes a semiconductor package. The semiconductor package includes a semiconductor die (100). A redistribution layer (RDL) structure (230) is disposed on the semiconductor die and is electrically connected to the semiconductor die. An active (140) or passive element (150) is disposed between the semiconductor die and the RDL structure. A molding compound (220) surrounds the semiconductor die and the active or passive element.
摘要:
A semiconductor chip package assembly (1) includes a package substrate (200) having a chip mounting surface (200a); a plurality of solder pads (212) disposed on the chip mounting surface; a first dummy pad (211) and a second dummy pad (211) spaced apart from the first dummy pad disposed on the chip mounting surface; a solder mask (202) on the chip mounting surface and partially covering the solder pads, the first dummy pad, and the second dummy pad; a chip package (100) mounted on the chip mounting surface and electrically connected to the package substrate through a plurality of solder balls (250) on respective said solder pads (212); a discrete device (150)having a first terminal (151) and a second terminal (152) disposed between the chip package and the package substrate; a first solder (154) connecting the first terminal with the first dummy pad (211) and the chip package (100); and a second solder (154) connecting the second terminal (152) with the second dummy pad (211) and the chip package (100).
摘要:
The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package (500a) including a first semiconductor die (302). A first molding compound (350) surrounds the first semiconductor die. A first redistribution layer (RDL) structure (308) is disposed on a bottom surface of the first molding compound. The first semiconductor die is coupled to the first RDL structure. A second redistribution layer (RDL) structure (328) is disposed on a top surface of the first molding compound. A passive device (330) is coupled to the second RDL structure.
摘要:
An exemplary implementation of the present disclosure includes a stacked package having a top die from a top reconstituted wafer situated over a bottom die from a bottom reconstituted wafer. The top die and the bottom die are insulated from one another by an insulation arrangement. The top die and the bottom die are also interconnected through the insulation arrangement. The insulation arrangement can include a top molding compound that flanks the top die and a bottom molding compound that flanks the bottom die. The top die and the bottom die can be interconnected through at least the top molding compound. Furthermore, the top die and the bottom die can be interconnected through a conductive via that extends within the insulation arrangement.
摘要:
A microelectronic package (290) having a (substrate 230), a microelectronic element (170), e.g., a chip, and terminals (240) can have conductive elements (238) electrically connected with element contacts of the chip and contacts of the substrate. Conductive elements can be electrically insulated from one another for simultaneously carrying different electric potentials. An encapsulant (201) can overlie the first surface (136) of the substrate and at least a portion of a face (672) of the microelectronic element remote from the substrate, and may have a major surface (200) above the microelectronic element. A plurality of package contacts (120, 220, 408, 410, 427) can overlie a face (672) of the microelectronic element remote from the substrate. The package contacts, e.g., conductive masses (410), substantially rigid posts (120, 220), can be electrically interconnected with terminals (240) of the substrate (230), such as through the conductive elements. The package contacts can have top surfaces (121) at least partially exposed at the major (surface 200) of the encapsulant (201).
摘要:
A package on package stacking method is provided. The package on package stacking method includes attaching a lead frame (24) and a substrate (22); attaching an integrated circuit (IC, 34) and the substrate, and electrically connecting the IC (34) and the lead frame (24); and packaging the IC (34), a part of the substrate (22) and a part of the lead frame (24), and exposing a surface mount joint to form a concave package (42).