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公开(公告)号：EP2425450A4
公开(公告)日：2016-10-05
申请号：EP10770036
申请日：2010-04-30
CPC分类号： H01L23/10 , B81C1/00269 , B81C2203/0118 , B81C2203/019 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/13144 , H01L2224/29035 , H01L2224/29111 , H01L2224/29144 , H01L2224/81193 , H01L2224/81203 , H01L2224/81895 , H01L2224/83805 , H01L2224/9211 , H01L2924/00014 , H01L2924/01079 , H01L2924/01322 , H01L2924/1461 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2224/0401
摘要： A sealing and bonding material structure for joining semiconductor wafers having monolithically integrated components. The sealing and bonding material are provided in strips forming closed loops. There are provided at least two concentric sealing strips on one wafer. The strips are laid out so as to surround the component(s) on the wafers to be sealed off when wafers are bonded together. The material in the strips is a material bonding the semiconductor wafers together and sealing off the monolithically integrated components when subjected to force and optionally heating. A monolithically integrated electrical and/or mechanical and/or fluidic and/or optical device including a first substrate and a second substrate, bonded together with the sealing and bonding structure, and a method of providing a sealing and bonding material structure on at least one of two wafers and applying a force and optionally heat to the wafers to join them are described.
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公开(公告)号：EP2791049A4
公开(公告)日：2015-04-01
申请号：EP12856909
申请日：2012-12-17
发明人： EBEFORS THORBJÖRN , SVEDIN NIKLAS
IPC分类号： B81C1/00
CPC分类号： B81C1/00285 , B81B7/0038 , B81C1/00293 , B81C2203/0136 , B81C2203/0145
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公开(公告)号：EP3038974A4
公开(公告)日：2017-07-26
申请号：EP14839979
申请日：2014-08-26
CPC分类号： B81B7/007 , B81B2201/01 , B81B2201/0264 , B81B2201/0271 , B81B2203/0118 , B81B2203/0127 , B81B2207/095 , B81C1/00301 , B81C2201/0153 , B81C2201/036 , B81C2203/0109 , B81C2203/0145 , H01L21/50 , H01L23/08 , H01L24/94 , H01L2924/16235
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公开(公告)号：EP2377154A4
公开(公告)日：2012-06-27
申请号：EP09835356
申请日：2009-12-23
IPC分类号： G02B26/08 , B81B7/00 , B81C1/00 , H01L21/768
CPC分类号： G02B26/0833 , B81B7/0006 , B81B7/007 , B81B2207/092 , B81B2207/095 , G02B6/3518 , G02B6/3584 , G02B26/0841 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： The invention relates to a layered micro-electronic and/or micro-mechanic structure, comprising at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.
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