公开(公告)号：EP1986471A4

公开(公告)日：2010-12-01

申请号：EP07714103

申请日：2007-02-13

申请人： TOKYO ELECTRON LTD ,  NAT UNIVERSITY CORP TOHOKU UNV

发明人： NOZAWA TOSHIHISA ,  MOYAMA KAZUKI ,  OHMI TADAHIRO ,  KAWAMURA CHUICHI ,  YOSHINO KIMIHIKO

IPC分类号： H05B33/10 ,  H01L51/50 ,  H01L51/56 ,  H05B33/26

CPC分类号： H01L51/0017 ,  H01L51/5012 ,  H01L51/56

公开(公告)号：EP2096678A4

公开(公告)日：2010-06-30

申请号：EP07850921

申请日：2007-12-19

申请人： NAT UNIVERSITY CORP TOHOKU UNV ,  ZEON CORP ,  UBE NITTO KASEI CO ,  UBE INDUSTRIES

发明人： OHMI TADAHIRO ,  SUGITANI KOICHI ,  KOIKE TADASHI ,  BAMBA AKINORI ,  KOBAYASHI AKIHIRO ,  WATANUKI KOHEI

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/4908 ,  H01L27/1292 ,  H01L29/78639

公开(公告)号：EP1918799A4

公开(公告)日：2009-05-06

申请号：EP06746185

申请日：2006-05-10

申请人： FUJIKIN KK ,  NAT UNIVERSITY CORP TOHOKU UNV

发明人： OHMI TADAHIRO ,  NISHINO KOUJI ,  DOHI RYOUSUKE ,  IKEDA NOBUKAZU ,  NAGASE MASAAKI ,  HIRATA KAORU ,  SUGITA KATSUYUKI ,  SHINOHARA TSUTOMU ,  HIROSE TAKASHI ,  IMAI TOMOKAZU ,  YOSHIDA TOSHIHIDE ,  TANAKA HISASHI

IPC分类号： G05D7/06 ,  F16K27/00 ,  F16L55/00 ,  G01F1/42

CPC分类号： F16K27/003 ,  F16L55/02718 ,  G01F1/36 ,  G01F15/001 ,  G01F15/005 ,  G05D7/0635

摘要： An orifice changeable pressure type flow controller capable of easily changing a control flow by easily changing an orifice without disassembling and assembling the flow controller. In the flow controller (A), the valve body (23) of a control valve (2) is disposed between an inlet side mounting block (39) having a connection part for a fluid feed pipe and an outlet side mounting block (43) having a connection part for a fluid takeout pipe, and the fluid inlet side of the valve body (23) is releasably connected airtight to the inlet side mounting block (39) and the fluid outlet side of the valve body (23) is releasably connected airtight to the outlet side mounting block (43) to form a flow passage allowing gases to flow therein through the control valve (2). The gasket type orifice (38) of the flow controller (A) is detachably inserted between a gasket type orifice insertion hole (42c) formed on the outlet side of the valve body (23) and a gasket type orifice insertion hole (43b) in the outlet side mounting block (43).

公开(公告)号：EP2669951A4

公开(公告)日：2014-07-02

申请号：EP12739888

申请日：2012-01-23

申请人： UNIV TOHOKU ,  FURUKAWA ELECTRIC CO LTD ,  FUJI ELECTRIC CO LTD ,  TOKYO ELECTRON LTD

发明人： TERAMOTO AKINOBU ,  KAMBAYASHI HIROSHI ,  UEDA HIROKAZU ,  MOROZUMI YUICHIRO ,  HARADA KATSUSHIGE ,  HASEBE KAZUHIDE ,  OHMI TADAHIRO

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L21/338 ,  H01L29/20 ,  H01L29/423 ,  H01L29/51 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/28264 ,  H01L23/564 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1681715A4

公开(公告)日：2009-12-30

申请号：EP04818177

申请日：2004-11-02

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  NOZAWA TOSHIHISA ,  MORITA OSAMU ,  YUASA TAMAKI ,  KOTANI KOJI

IPC分类号： H01J37/32 ,  C23C16/455 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32192 ,  C23C16/4411 ,  C23C16/45572 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32724

公开(公告)号：EP1898456A4

公开(公告)日：2009-11-18

申请号：EP06757104

申请日：2006-06-07

申请人： UNIV TOHOKU ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  HONDA MINORU ,  NAKANISHI TOSHIO

IPC分类号： H01L21/318

CPC分类号： H01L21/3185

公开(公告)号：EP1083591A4

公开(公告)日：2008-11-26

申请号：EP00906684

申请日：2000-03-03

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI

IPC分类号： H01L21/00 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/67109 ,  H01J2237/2001 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069

摘要： A device for plasma processing comprises a gas supply system for supplying a source gas necessary for creating a plasma, and an exhaust system for discharging the gas to reduce the pressure in a container, in which a plasma is generated to process an object. The container encloses a conducting stage for supporting an object to be processed, and the stage has a structure to which DC or high-frequency voltage is applied. The stage includes the cooling channel within it to cool the object to be processed. The material of the cooling channel has a high thermal conductivity to transfer heat from the stage to the cooling channel, and the material is highly insulative to isolate the coolant from the DC or high-frequency voltage is applied to the stage.

公开(公告)号：EP1811562A4

公开(公告)日：2008-11-19

申请号：EP05787588

申请日：2005-09-30

申请人： TOKYO ELECTRON LTD ,  UNIV TOHOKU

发明人： KITAGAWA JUNICHI ,  OZAKI SHIGENORI ,  TERAMOTO AKINOBU ,  OHMI TADAHIRO

IPC分类号： H01L21/8247 ,  H01L21/318 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L29/792 ,  H01L21/28202 ,  H01L21/28273 ,  H01L29/513

摘要： [PROBLEMS] To provide a semiconductor storage device having excellent electrical characteristics (writing/erasing characteristics) by excellent nitrogen concentration profile of a gate insulating film and to provide a method for manufacturing such device. [MEANS FOR SOLVING PROBLEMS] In a semiconductor device manufacturing method relating to a first embodiment of this invention, a method for manufacturing a semiconductor storage device which operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode includes a process of introducing oxynitriding species previously diluted by using a gas for plasma excitation into a plasma processing apparatus, generating the oxynitriding species by plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contain an NO gas of 0.00001-0.01% to the total gas quantity introduced into the plasma processing apparatus.

摘要翻译： 本发明提供一种通过栅极绝缘膜的优异的氮浓度分布而具有优异的电特性（写入/擦除特性）的半导体存储装置，并提供用于制造该装置的方法。 用于解决问题的手段本发明的第一实施方式涉及的半导体装置的制造方法中，通过在半导体基板与栅电极之间形成的栅极绝缘膜转移电荷而工作的半导体存储装置的制造方法包括： 将通过使用用于等离子体激发的气体预先稀释的氮氧化物种引入到等离子体处理设备中，通过等离子体产生氮氧化物种，以及在作为栅极绝缘膜的半导体基板上形成氧氮化物膜。 对于导入等离子体处理装置的总气体量，氮氧化物质含有0.00001-0.01％的NO气体。

公开(公告)号：EP1617483A4

公开(公告)日：2008-03-05

申请号：EP04724878

申请日：2004-03-31

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  WAKAMATSU HIDETOSHI ,  KOBAYASHI YASUO

IPC分类号： H01L29/78 ,  H01L21/04 ,  H01L21/28 ,  H01L21/318 ,  H01L21/336 ,  H01L29/51

CPC分类号： H01L21/318 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor device exhibiting good characteristics by sustaining the dielectric constant of a High-K insulating film in a high state, and a process for fabricating a semiconductor device in which the dielectric constant of the High-K insulating film can be sustained in a high state. The semiconductor device comprises a silicon substrate, a gate electrode layer, and a gate insulating film interposed between the silicon substrate and the gate electrode layer. The gate insulating film is a high dielectric constant (high-k) film produced by nitriding a mixture of a metal and silicon. Since the High-K film itself is a nitride, generation of SiO2 can be prevented.

公开(公告)号：EP1115147A4

公开(公告)日：2007-05-02

申请号：EP00931563

申请日：2000-05-25

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI

IPC分类号： C23C16/24 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01J37/32

CPC分类号： C23C16/45565 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

摘要： A microwave plasma process device, wherein a metal lattice-shaped shower plate (111) is provided between a dielectric shower plate (103) and a substrate (114), and a plasma exciting gas mainly consisting of rare gases and a processing gas are released from different locations. When the lattice-shaped shower plate is grounded, a high-energy ion can be implanted into the surface of the substrate (114). When the thicknesses of a dielectric partition (102) at a microwave introduction portion and an dielectric are optimized to maximize a plasma exciting efficiency, and, at the same time, the distance between a slot antenna (110) and the dielectric partition (102) and the thickness of the dielectric shower plate (103) are optimized, a high-power microwave can be input.