公开(公告)号：EP2544224A4

公开(公告)日：2014-06-25

申请号：EP11750723

申请日：2011-03-02

Applicant: FURUKAWA ELECTRIC CO LTD ,  FUJI ELECTRIC CO LTD ,  UNIV TOHOKU

Inventor： KAMBAYASHI HIROSHI ,  TERAMOTO AKINOBU ,  OHMI TADAHIRO

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/336 ,  H01L29/20 ,  H01L29/45 ,  H01L29/78

CPC classification number: H01L21/28575 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66522

公开(公告)号：EP2197023A4

公开(公告)日：2013-05-22

申请号：EP08835197

申请日：2008-10-06

Applicant: UNIV TOHOKU NAT UNIV CORP ,  SHINETSU HANDOTAI KK

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  SUWA TOMOYUKI ,  KURODA RIHITO ,  KUDO HIDEO ,  HAYAMI YOSHINORI

IPC: H01L21/02 ,  H01L21/324 ,  H01L29/04 ,  H01L29/78

CPC classification number: H01L29/045 ,  H01L21/02381 ,  H01L21/02433 ,  H01L29/78

Abstract: On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).

公开(公告)号：EP1931186A4

公开(公告)日：2012-09-26

申请号：EP06796550

申请日：2006-08-18

Applicant: UNIV TOHOKU

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  MORIMOTO AKIHIRO

IPC: H05K3/46

CPC classification number: H05K1/024 ,  H05K3/4602 ,  H05K3/4626 ,  H05K3/4673 ,  H05K2201/0116 ,  H05K2201/0195 ,  H05K2201/0209 ,  H05K2201/0254

公开(公告)号：EP1906440A4

公开(公告)日：2011-06-01

申请号：EP06757382

申请日：2006-06-16

Applicant: UNIV TOHOKU ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU

IPC: H01L21/336 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L29/786

CPC classification number: H01L27/1203 ,  H01L29/045

公开(公告)号：EP2040302A4

公开(公告)日：2011-05-18

申请号：EP07767367

申请日：2007-06-21

Applicant: UNIV TOHOKU NAT UNIV CORP ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  CHENG WEITAO

IPC: H01L29/786

CPC classification number: H01L29/78654 ,  H01L29/78603 ,  H01L29/78648

公开(公告)号：EP2669933A4

公开(公告)日：2015-05-13

申请号：EP12739117

申请日：2012-01-23

Applicant: UNIV TOHOKU NAT UNIV CORP ,  FURUKAWA ELECTRIC CO LTD

Inventor： KAMBAYASHI HIROSHI ,  TERAMOTO AKINOBU ,  OHMI TADAHIRO

IPC: H01L21/20 ,  H01L21/302 ,  H01L21/306 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L21/30604 ,  H01L21/02057 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02664 ,  H01L21/302 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/51 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/7783 ,  H01L29/7827

公开(公告)号：EP2669951A4

公开(公告)日：2014-07-02

申请号：EP12739888

申请日：2012-01-23

Applicant: UNIV TOHOKU ,  FURUKAWA ELECTRIC CO LTD ,  FUJI ELECTRIC CO LTD ,  TOKYO ELECTRON LTD

Inventor： TERAMOTO AKINOBU ,  KAMBAYASHI HIROSHI ,  UEDA HIROKAZU ,  MOROZUMI YUICHIRO ,  HARADA KATSUSHIGE ,  HASEBE KAZUHIDE ,  OHMI TADAHIRO

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L21/338 ,  H01L29/20 ,  H01L29/423 ,  H01L29/51 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/28264 ,  H01L23/564 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1976017A4

公开(公告)日：2011-05-25

申请号：EP06835010

申请日：2006-12-20

Applicant: UNIV TOHOKU ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  WATANABE KAZUFUMI

IPC: H01L29/786 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092

CPC classification number: H01L27/1211 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L29/045 ,  H01L29/785 ,  H01L2029/7857

公开(公告)号：EP1898456A4

公开(公告)日：2009-11-18

申请号：EP06757104

申请日：2006-06-07

Applicant: UNIV TOHOKU ,  TOKYO ELECTRON LTD

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  HONDA MINORU ,  NAKANISHI TOSHIO

IPC: H01L21/318

CPC classification number: H01L21/3185

公开(公告)号：EP1811562A4

公开(公告)日：2008-11-19

申请号：EP05787588

申请日：2005-09-30

Applicant: TOKYO ELECTRON LTD ,  UNIV TOHOKU

Inventor： KITAGAWA JUNICHI ,  OZAKI SHIGENORI ,  TERAMOTO AKINOBU ,  OHMI TADAHIRO

IPC: H01L21/8247 ,  H01L21/318 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L29/792 ,  H01L21/28202 ,  H01L21/28273 ,  H01L29/513

Abstract: [PROBLEMS] To provide a semiconductor storage device having excellent electrical characteristics (writing/erasing characteristics) by excellent nitrogen concentration profile of a gate insulating film and to provide a method for manufacturing such device. [MEANS FOR SOLVING PROBLEMS] In a semiconductor device manufacturing method relating to a first embodiment of this invention, a method for manufacturing a semiconductor storage device which operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode includes a process of introducing oxynitriding species previously diluted by using a gas for plasma excitation into a plasma processing apparatus, generating the oxynitriding species by plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contain an NO gas of 0.00001-0.01% to the total gas quantity introduced into the plasma processing apparatus.

Abstract translation: 本发明提供一种通过栅极绝缘膜的优异的氮浓度分布而具有优异的电特性（写入/擦除特性）的半导体存储装置，并提供用于制造该装置的方法。 用于解决问题的手段本发明的第一实施方式涉及的半导体装置的制造方法中，通过在半导体基板与栅电极之间形成的栅极绝缘膜转移电荷而工作的半导体存储装置的制造方法包括： 将通过使用用于等离子体激发的气体预先稀释的氮氧化物种引入到等离子体处理设备中，通过等离子体产生氮氧化物种，以及在作为栅极绝缘膜的半导体基板上形成氧氮化物膜。 对于导入等离子体处理装置的总气体量，氮氧化物质含有0.00001-0.01％的NO气体。