公开(公告)号：EP2669933A4

公开(公告)日：2015-05-13

申请号：EP12739117

申请日：2012-01-23

Applicant: UNIV TOHOKU NAT UNIV CORP ,  FURUKAWA ELECTRIC CO LTD

Inventor： KAMBAYASHI HIROSHI ,  TERAMOTO AKINOBU ,  OHMI TADAHIRO

IPC: H01L21/20 ,  H01L21/302 ,  H01L21/306 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L21/30604 ,  H01L21/02057 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02664 ,  H01L21/302 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/51 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/7783 ,  H01L29/7827

公开(公告)号：EP2669951A4

公开(公告)日：2014-07-02

申请号：EP12739888

申请日：2012-01-23

Applicant: UNIV TOHOKU ,  FURUKAWA ELECTRIC CO LTD ,  FUJI ELECTRIC CO LTD ,  TOKYO ELECTRON LTD

Inventor： TERAMOTO AKINOBU ,  KAMBAYASHI HIROSHI ,  UEDA HIROKAZU ,  MOROZUMI YUICHIRO ,  HARADA KATSUSHIGE ,  HASEBE KAZUHIDE ,  OHMI TADAHIRO

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L21/338 ,  H01L29/20 ,  H01L29/423 ,  H01L29/51 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/28264 ,  H01L23/564 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1918427A4

公开(公告)日：2012-01-04

申请号：EP06746158

申请日：2006-05-09

Applicant: UNIV TOHOKU ,  MITSUBISHI CHEM CORP

Inventor： OHMI TADAHIRO ,  SHIRAI YASUYUKI ,  MORINAGA HITOSHI ,  KAWASE YASUHIRO ,  KITANO MASAFUMI ,  MIZUTANI FUMIKAZU ,  ISHIKAWA MAKOTO

IPC: C25D11/04 ,  C25D11/06 ,  C25D11/18 ,  H01L21/3065

CPC classification number: C25D11/06 ,  C25D11/18 ,  Y10T428/265

公开(公告)号：EP1976017A4

公开(公告)日：2011-05-25

申请号：EP06835010

申请日：2006-12-20

Applicant: UNIV TOHOKU ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  WATANABE KAZUFUMI

IPC: H01L29/786 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092

CPC classification number: H01L27/1211 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L29/045 ,  H01L29/785 ,  H01L2029/7857

公开(公告)号：EP1898456A4

公开(公告)日：2009-11-18

申请号：EP06757104

申请日：2006-06-07

Applicant: UNIV TOHOKU ,  TOKYO ELECTRON LTD

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  HONDA MINORU ,  NAKANISHI TOSHIO

IPC: H01L21/318

CPC classification number: H01L21/3185

公开(公告)号：EP1811562A4

公开(公告)日：2008-11-19

申请号：EP05787588

申请日：2005-09-30

Applicant: TOKYO ELECTRON LTD ,  UNIV TOHOKU

Inventor： KITAGAWA JUNICHI ,  OZAKI SHIGENORI ,  TERAMOTO AKINOBU ,  OHMI TADAHIRO

IPC: H01L21/8247 ,  H01L21/318 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L29/792 ,  H01L21/28202 ,  H01L21/28273 ,  H01L29/513

Abstract: [PROBLEMS] To provide a semiconductor storage device having excellent electrical characteristics (writing/erasing characteristics) by excellent nitrogen concentration profile of a gate insulating film and to provide a method for manufacturing such device. [MEANS FOR SOLVING PROBLEMS] In a semiconductor device manufacturing method relating to a first embodiment of this invention, a method for manufacturing a semiconductor storage device which operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode includes a process of introducing oxynitriding species previously diluted by using a gas for plasma excitation into a plasma processing apparatus, generating the oxynitriding species by plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contain an NO gas of 0.00001-0.01% to the total gas quantity introduced into the plasma processing apparatus.

Abstract translation: 本发明提供一种通过栅极绝缘膜的优异的氮浓度分布而具有优异的电特性（写入/擦除特性）的半导体存储装置，并提供用于制造该装置的方法。 用于解决问题的手段本发明的第一实施方式涉及的半导体装置的制造方法中，通过在半导体基板与栅电极之间形成的栅极绝缘膜转移电荷而工作的半导体存储装置的制造方法包括： 将通过使用用于等离子体激发的气体预先稀释的氮氧化物种引入到等离子体处理设备中，通过等离子体产生氮氧化物种，以及在作为栅极绝缘膜的半导体基板上形成氧氮化物膜。 对于导入等离子体处理装置的总气体量，氮氧化物质含有0.00001-0.01％的NO气体。

公开(公告)号：EP2284882A4

公开(公告)日：2012-06-27

申请号：EP09758223

申请日：2009-05-22

Applicant: UNIV TOHOKU NAT UNIV CORP ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  SUGAWA SHIGETOSHI ,  IMAI HIROSHI ,  TERAMOTO AKINOBU

IPC: H05K1/02 ,  H01L23/12 ,  H01L23/66 ,  H01P3/08 ,  H05K3/46

CPC classification number: H05K1/0218 ,  H01L23/66 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6688 ,  H01L2924/0002 ,  H01L2924/19032 ,  H01L2924/3011 ,  H05K1/025 ,  H05K1/0265 ,  H05K3/4652 ,  H05K2201/0191 ,  H05K2201/0352 ,  H05K2201/0715 ,  H05K2201/096 ,  H05K2201/09618 ,  H05K2201/09727 ,  H05K2201/09972 ,  H01L2924/00

公开(公告)号：EP2117018A4

公开(公告)日：2011-09-14

申请号：EP08703665

申请日：2008-01-22

Applicant: UNIV TOHOKU NAT UNIV CORP ,  SUMITOMO OSAKA CEMENT CO LTD

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  ISHIZUKA MASAYUKI ,  HIDAKA NOBUHIRO ,  SHIRAKATA YASUSHI

IPC: H01F1/26 ,  H01F1/147 ,  H01F1/24 ,  H01F1/37 ,  H01F41/02 ,  H05K1/02 ,  H05K1/03 ,  H05K9/00

CPC classification number: H01F41/0246 ,  H01F1/26 ,  H01F1/37 ,  H05K1/0233

公开(公告)号：EP2184771A4

公开(公告)日：2010-10-20

申请号：EP08792453

申请日：2008-08-14

Applicant: UNIV TOHOKU NAT UNIV CORP ,  TOKYO ELECTRON LTD ,  UBE INDUSTRIES ,  UBE NITTO KASEI CO

Inventor： OHMI TADAHIRO ,  MATSUOKA TAKAAKI ,  INOKUCHI ATSUTOSHI ,  WATANUKI KOHEI ,  KOIKE TADASHI ,  ADACHI TATSUHIKO

IPC: H01L21/312 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5329 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/7684 ,  H01L21/76897 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2071907A4

公开(公告)日：2009-12-09

申请号：EP06798183

申请日：2006-09-21

Applicant: DAISHO DENSHI CO LTD ,  UNIV TOHOKU

Inventor： SATO AKIHIRO ,  SASAKI MASAHIRO ,  OHMI TADAHIRO ,  MORIMOTO AKIHIRO

IPC: H05K1/02

CPC classification number: H05K3/4691 ,  C23F1/02 ,  C23F1/18 ,  C23F4/00 ,  C23F4/04 ,  H05K3/064 ,  H05K3/243 ,  H05K3/4652 ,  H05K2201/09736 ,  H05K2203/0369 ,  Y10T29/49117 ,  Y10T29/49155 ,  Y10T29/49165 ,  Y10T156/10

Abstract: A flex-rigid printed wiring board is provided which can retain flexibility of a flexible portion while increasing durability of the flexible portion against folding, and can ensure conduction in a rigid portion, and a method of manufacturing the printed wiring board. The flex-rigid printed wiring board includes a conductor layer provided on at least one face of a base film, one region of the wiring board containing the base film being a rigid region, an another region containing the base film being a flexible region. The average thickness "tf" of the conductor layer on the base film formed in the flexible region and the average thickness "tR" of the conductor layer on the base film formed in the rigid region satisfy the relationship of tf