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1.发明公开Electroconductive bonding material comprising three types of metal particles with different melting points and its use for bonding an electronic component to a substrate 审中-公开包括具有不同熔点和其的电子部件连接到基底上的应用程序3种金属粒子的导电性连接材料
公开(公告)号：EP2490252A2
公开(公告)日：2012-08-22
申请号：EP12155888.6
申请日：2012-02-17
申请人： Fujitsu Limited
IPC分类号： H01L21/60 , H01L21/48 , H01L23/485 , H01L23/498 , B22F1/00 , B23K35/02 , B22F1/02 , B23K35/26 , B23K35/30 , C22C5/02 , C22C5/06 , C22C9/00 , C22C12/00
CPC分类号： H01L24/13 , B22F1/0014 , B22F1/025 , B23K35/262 , B23K35/30 , B23K35/3006 , B23K35/3013 , B23K35/302 , C22C9/00 , C23C24/106 , H01L23/49811 , H01L23/49883 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05671 , H01L2224/0568 , H01L2224/05686 , H01L2224/1131 , H01L2224/1132 , H01L2224/11502 , H01L2224/13017 , H01L2224/13144 , H01L2224/13599 , H01L2224/13609 , H01L2224/13611 , H01L2224/13613 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13709 , H01L2224/13711 , H01L2224/13713 , H01L2224/13809 , H01L2224/13811 , H01L2224/13813 , H01L2224/13839 , H01L2224/13844 , H01L2224/13847 , H01L2224/13899 , H01L2224/13913 , H01L2224/13939 , H01L2224/13944 , H01L2224/13947 , H01L2224/16058 , H01L2224/16148 , H01L2224/16225 , H01L2224/16507 , H01L2224/32225 , H01L2224/73204 , H01L2224/81024 , H01L2224/81055 , H01L2224/81075 , H01L2224/81191 , H01L2224/81193 , H01L2224/812 , H01L2224/8121 , H01L2224/8123 , H01L2224/81509 , H01L2224/81511 , H01L2224/81513 , H01L2224/81639 , H01L2224/81644 , H01L2224/81647 , H01L2224/81699 , H01L2224/81711 , H01L2224/81713 , H01L2224/81739 , H01L2224/81744 , H01L2224/8181 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/13091 , H01L2924/15738 , H01L2924/15788 , H01L2924/1579 , H01L2924/01007 , H01L2924/01008 , H01L2924/01018 , H01L2924/01083 , H01L2924/01031 , H01L2924/0103 , H01L2924/053 , H01L2224/13099 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： An electro-conductive bonding material (20,30) includes: high-melting-point metal particles with a component having a first melting point, middle-melting-point metal particles having a second melting point, lower than the first melting point, low-melting-point metal particles having a third melting point, lower than the second melting point and preferably a flux. The high-melting-point metal particles include Au, Ag, Cu, Au-plated Cu, Sn-Bi-plated Cu and Ag-plated Cu particles. The middle-melting-point metal particles include Sn-Bi and Sn-Bi-Ag particles. The low-melting-point metal particles include Sn-Bi-ln and Sn-Bi-Ga particles. The electro-conductive bonding material (20,30) is used for bonding a substrate (6) and an electronic component (8). A method for bonding comprises supplying the electro-conductive bonding material (e.g. by paste printing) to any one of an electrode (7) of a substrate (6) and a terminal of an electronic component (8) (e.g. an Au bump (9)), heating the supplied electro-conductive bonding material at a temperature lower than the melting point of the middle-melting-point metal particles to form a first metallic bonding state, arranging the electronic component (8) on the substrate (6) with the electro-conductive bonding material in the first metallic bonding state therebetween and heating the electro-conductive bonding material at a temperature of the melting point of the middle-melting-point metal particles or higher and not exceeding 150°C to convert the first metallic bonding state into a second metallic bonding state with a melting point of 250°C or higher and form a bond.
摘要翻译： 导电性接合材料（20,30）包括：高融点的金属颗粒与具有第一熔点的成分，具有第二熔点中间的低熔点金属微粒，比第一熔点低，低 -melting点具有第三熔点，比第二熔点，并且优选的助熔剂下金属颗粒。 高融点金属颗粒包括金，银，铜，镀Au的Cu，Sn-Bi系镀Cu和镀Ag的Cu粒子。 中等熔点金属颗粒包括Sn-Bi系和Sn-Bi系Ag粒子。 低融点的金属颗粒包括Sn-Bi系-In和Sn-邲夹颗粒。 导电接合材料（20,30）是用于粘合基片（6）和电子部件（8）。 一种用于接合方法包括导电接合材料（例如，通过膏印刷）供给到电极的基板中的任一个（7）的（6），并在金凸点的电子部件（8）（例如一个终端（9 ）），在比中间低熔点金属粒子的熔点低的温度下加热所述提供导电粘合材料，以形成第一金属接合状态，安排在电子部件（8）上的基板（6）与 在之间的第一金属接合状态有导电粘合材料，并在中间的低熔点金属颗粒或更高的熔点的温度下加热所述导电接合材料和不超过150℃至第一种金属转换 接合状态与250℃或更高的熔点的第二金属接合状态和形成键。
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2.发明公开
公开(公告)号：EP2410562A1
公开(公告)日：2012-01-25
申请号：EP09841905.4
申请日：2009-10-15
申请人： Fujitsu Limited
IPC分类号： H01L23/32
CPC分类号： H05K1/0296 , H01L23/13 , H01L23/49811 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L23/4985 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05647 , H01L2224/1379 , H01L2224/13839 , H01L2224/13847 , H01L2224/16225 , H01L2224/16235 , H01L2224/81193 , H01L2224/81801 , H01L2924/01004 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/15311 , H05K1/181 , H05K3/3436 , H05K2201/10287 , H05K2201/10378 , H05K2201/10424 , H05K2201/10719 , Y02P70/613 , H01L2924/00
摘要： [Object] To improve connection reliability between a wiring board and a semiconductor component in a semiconductor device, a method for manufacturing the same, an electronic device, and an electronic component.
[Solving Means] A semiconductor device includes: a wiring board 11 including a first electrode pad 14 on a surface thereof; a circuit board 30 disposed to stand on the wiring board 11, and including an interconnection 31 connected to the first electrode pad 14; and a semiconductor package 20 disposed to face the wiring board 11 with the circuit board 30 interposed therebetween, and including a second electrode pad 19 on a surface thereof, the second electrode pad 19 being connected to the interconnection 31.-
3.发明公开
公开(公告)号：EP2410562A4
公开(公告)日：2014-09-24
申请号：EP09841905
申请日：2009-10-15
申请人： FUJITSU LTD
IPC分类号： H01L23/32
CPC分类号： H05K1/0296 , H01L23/13 , H01L23/49811 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L23/4985 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05647 , H01L2224/1379 , H01L2224/13839 , H01L2224/13847 , H01L2224/16225 , H01L2224/16235 , H01L2224/81193 , H01L2224/81801 , H01L2924/01004 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/15311 , H05K1/181 , H05K3/3436 , H05K2201/10287 , H05K2201/10378 , H05K2201/10424 , H05K2201/10719 , Y02P70/613 , H01L2924/00
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4.发明授权A method of forming a bump having a rugged side and a semiconductor device having the bump, and a method of mounting a semiconductor device on a circuit board 失效制造的凸块的方法与具有凸块和用于在电路基板上安装半导体元件的方法的粗糙化的表面和半导体器件
公开(公告)号：EP0616363B1
公开(公告)日：1998-12-23
申请号：EP94101266.8
申请日：1994-01-28
IPC分类号： H01L21/60
CPC分类号： H01L24/11 , H01L24/13 , H01L24/45 , H01L2224/1184 , H01L2224/13019 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13562 , H01L2224/1357 , H01L2224/1379 , H01L2224/13839 , H01L2224/13844 , H01L2224/13847 , H01L2224/2929 , H01L2224/293 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/81345 , H01L2224/8159 , H01L2224/816 , H01L2224/81903 , H01L2224/83851 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2224/48 , H01L2224/29075 , H01L2224/05599
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5.发明授权SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, ELECTRONIC DEVICE AND ELECTRONIC COMPONENT 有权HALBLEITERBAUEMENT，HERSTELLUNGSVERFAHRENDAFÜR，ELEKTRONISCHE EINRICHTUNG UND ELEKTRONISCHE KOMPONENTE
公开(公告)号：EP2410562B1
公开(公告)日：2016-04-13
申请号：EP09841905.4
申请日：2009-10-15
申请人： Fujitsu Limited
IPC分类号： H01L23/32
CPC分类号： H05K1/0296 , H01L23/13 , H01L23/49811 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L23/4985 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05647 , H01L2224/1379 , H01L2224/13839 , H01L2224/13847 , H01L2224/16225 , H01L2224/16235 , H01L2224/81193 , H01L2224/81801 , H01L2924/01004 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/15311 , H05K1/181 , H05K3/3436 , H05K2201/10287 , H05K2201/10378 , H05K2201/10424 , H05K2201/10719 , Y02P70/613 , H01L2924/00
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6.发明公开
公开(公告)号：EP0616363A1
公开(公告)日：1994-09-21
申请号：EP94101266.8
申请日：1994-01-28
IPC分类号： H01L21/60
CPC分类号： H01L24/11 , H01L24/13 , H01L24/45 , H01L2224/1184 , H01L2224/13019 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13562 , H01L2224/1357 , H01L2224/1379 , H01L2224/13839 , H01L2224/13844 , H01L2224/13847 , H01L2224/2929 , H01L2224/293 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/81345 , H01L2224/8159 , H01L2224/816 , H01L2224/81903 , H01L2224/83851 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2224/48 , H01L2224/29075 , H01L2224/05599
摘要： According to the present invention, a method for forming bumps for electrically connecting electrode pads of a semiconductor device to terminal electrodes formed on a surface of a circuit board respectively, the semiconductor device being mounted facedown on the surface of the circuit board, includes: step a of forming the bumps on the electrode pad of the semiconductor device; step b of placing facedown the semiconductor device on a flat foundation so that the bumps contact with a grind sheet which is fixed to the flat foundation and which has abrasive grind; and step c of conducting ultrasonic vibration on the flat foundation while pressing the semiconductor device against the flat foundation, thereby forming a rugged side in a front end portion of each of the bumps.
摘要翻译： 。根据本发明，对于用于电连接半导体装置形成的电路板的表面上分别，半导体装置被面朝下安装在电路板的表面上的端子电极的电极焊盘上形成凸点的方法，包括：步骤 一个形成在半导体器件的电极焊盘的凸块; 在平坦的地基面放置的半导体装置的向下步骤b所以也凸点与研磨片接触的所有其被固定到平坦的基础，并且具有磨料研磨; 和步骤c在平坦基础传导超声波振动的同时按下半导体器件抵靠平坦的基础上，从而形成在每个凸块的前端部的粗糙的侧面的。
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