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199 条记录 (耗时 0.028 秒)

    Semiconductor laser element
    91.
    发明专利
    Semiconductor laser element 审中-公开
    半导体激光元件

    公开(公告)号：JP2012028395A

    公开(公告)日：2012-02-09

    申请号：JP2010163023

    申请日：2010-07-20

    申请人： Sumitomo Electric Ind Ltd ,  住友電気工業株式会社

    发明人： KONO NAOYA

    IPC分类号： H01S5/12

    CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01S5/0208 ,  H01S5/028 ,  H01S5/0424 ,  H01S5/06226 ,  H01S5/0654 ,  H01S5/12 ,  H01S5/2214 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34306

    摘要： PROBLEM TO BE SOLVED: To reduce chirping in a semiconductor laser element emitting laser light of a predetermined wavelength.SOLUTION: A semiconductor laser element 10, which emits laser light of a predetermined wavelength, comprises: an active layer 23; a diffraction grating layer 26 constituting a diffraction grating 26a that is provided along the active layer 23 in a period depending on the predetermined wavelength; an upper cladding layer 25 provided between the active layer 23 and the diffraction grating layer 26; and a dielectric layer 27 formed so as to bury the diffraction grating 26a of the diffraction grating layer 26.

    摘要翻译： 要解决的问题：减少发射预定波长的激光的半导体激光元件的啁啾。 解决方案：发射预定波长的激光的半导体激光元件10包括：有源层23; 构成衍射光栅26a的衍射光栅层26，其沿着有源层23在预定波长的期间内设置; 设置在有源层23和衍射光栅层26之间的上包层25; 以及形成为埋入衍射光栅层26的衍射光栅26a的电介质层27.（C）2012，JPO＆INPIT

    Package for an optical semiconductor device
    96.
    发明专利
    Package for an optical semiconductor device 有权

    公开(公告)号：JP4550386B2

    公开(公告)日：2010-09-22

    申请号：JP2003293105

    申请日：2003-08-13

    申请人： 三菱電機株式会社

    发明人： 栄太郎 石村

    IPC分类号： H01S5/022 ,  H01S5/02 ,  H01S5/062 ,  H01S5/0683

    CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01L2924/3011 ,  H01S5/06226 ,  H01S5/0683 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A stem package with good high frequency characteristics for high-speed transmission at 10 Gbps and higher includes a stem which has an under surface, an upper surface and one or more through holes penetrating from the upper surface to the under surface, a mount for mounting, with an optical semiconductor device, on the upper surface, a lead terminal for signal supply penetrating one of the through holes with an insulator between the stem and the lead terminal, the upper surface having an earth conductor adjacent to the lead terminal for signal supply and Projecting from the upper surface so that a difference between the characteristic impedance of the transmission line constituted by the through hole, the insulator, and the lead terminal for signal supply and the characteristic impedance of the transmission line constituted by a lead terminal for signal supply projecting from the upper surface is small.

    Optical semiconductor device
    97.
    发明专利
    Optical semiconductor device 有权
    光学半导体器件

    公开(公告)号：JP2009302438A

    公开(公告)日：2009-12-24

    申请号：JP2008157602

    申请日：2008-06-17

    申请人： Opnext Japan Inc ,  日本オプネクスト株式会社

    发明人： SAKA TAKUMA ,  SASADA MICHIHIDE ,  OKAYASU MASANOBU

    IPC分类号： H01S5/022 ,  H01L31/02

    CPC分类号： H01L31/0203 ,  H01L2224/48091 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/3011 ,  H01S5/02212 ,  H01S5/06226 ,  H05K1/0219 ,  H05K1/028 ,  H05K1/147 ,  H05K1/189 ,  H05K3/28 ,  H05K3/3421 ,  H05K3/3447 ,  H05K2201/0305 ,  H05K2201/09727 ,  H05K2201/10121 ,  H05K2201/10659 ,  H01L2924/00014

    摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device using a CAN-type optical package which firmly connects a flexible substrate to the CAN-type optical package to maintain reliability as a product, while maintaining high-frequency signal reflection low at a connecting portion to obtain high-frequency characteristics.
    SOLUTION: High-frequency signal metal patterns are formed on the flexible substrate which is bent at almost right angles at ends of the signal metal patterns. The signal metal patterns are conductively fixed to signal lead pins attached to a stem to be virtually parallel with the signal lead pins. Some of the lead pins are inserted through-holes formed on the flexible substrate to be fixed conductively to some of the metal patterns on the flexible substrate.
    COPYRIGHT: (C)2010,JPO&INPIT

    摘要翻译： 要解决的问题：为了提供一种使用CAN型光学封装的光学半导体器件，其将柔性衬底牢固地连接到CAN型光学封装，以保持作为产品的可靠性，同时将高频信号反射保持在低电平 连接部分，以获得高频特性。 解决方案：高频信号金属图案形成在柔性基板上，其在信号金属图案的端部处以几乎直角弯曲。 信号金属图案被导电地固定到附接到杆的信号引线引脚，以与信号引线引脚实际上平行。 一些引脚插入形成在柔性基板上的通孔，以导电地固定到柔性基板上的一些金属图案。 版权所有（C）2010，JPO＆INPIT

    Surface emitting semiconductor laser
    98.
    发明专利
    Surface emitting semiconductor laser 有权
    表面发射半导体激光

    公开(公告)号：JP2009117617A

    公开(公告)日：2009-05-28

    申请号：JP2007289009

    申请日：2007-11-06

    申请人： Sumitomo Electric Ind Ltd ,  住友電気工業株式会社

    发明人： ONISHI YUTAKA

    IPC分类号： H01S5/183

    CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/0208 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18322 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2063 ,  H01S5/3095 ,  H01S5/34306

    摘要： PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser capable of reducing the resistance of an element, while avoiding increase in the parasitic capacitance, as well as, avoiding saturation of the t output, due to the drop in the heat dissipation performance.
    SOLUTION: A high resistance region 31b of semiconductor space layers 19, 21 extends along a side surface 19a of a resonator mesa 19 in the direction of a predetermined axis AX1, as well as, crossing a boundary B of the semiconductor spacer layers 19, 21. In a low-resistance region 31a, the conductive type of the semiconductor spacer layer 19 is different from the conductive type of the semiconductor spacer layer 21. The low-resistance region 31a is provided so as to extend along the side surface of a high-resistance region 31b and a side surface 29a of a resonator mesa 29, as well as, crossing the p-n junction 33 of the semiconductor spacer layers 19, 21. A second DBR 25 and a tunnel junction region 23 region located on a first region 13c. An active layer 17 and a first electrode 27 are located on the boundary line B, the first region 13c, and a second region 13d.
    COPYRIGHT: (C)2009,JPO&INPIT

    摘要翻译： 要解决的问题：提供能够降低元件电阻的表面发射半导体激光器，同时避免寄生电容的增加，以及由于热量的下降而避免t输出的饱和 耗散性能。 解决方案：半导体空间层19,21的高电阻区域31b沿着预定轴线AX1的方向沿着谐振器台面19的侧面19a延伸，并且与半导体间隔层的边界B交叉 在低电阻区域31a中，半导体间隔层19的导电类型与半导体间隔层21的导电类型不同。低电阻区域31a设置成沿着侧面 谐振器台面29的高电阻区域31b和侧面29a，以及与半导体间隔层19,21的pn结33交叉。第二DBR 25和隧道结区域23位于 第一区域13c。 有源层17和第一电极27位于边界线B，第一区域13c和第二区域13d上。 版权所有（C）2009，JPO＆INPIT