公开(公告)号：JP5124693B1

公开(公告)日：2013-01-23

申请号：JP2012098837

申请日：2012-04-24

Applicant: 有限会社 ナプラ

Inventor： 重信 関根 ,  由莉奈 関根

IPC: H05K1/09 ,  H01B5/14

CPC classification number: H01L23/48 ,  H01B1/22 ,  H01L21/4867 ,  H01L21/563 ,  H01L23/498 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49883 ,  H01L23/49894 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/16 ,  H01L31/022425 ,  H01L31/0682 ,  H01L33/62 ,  H01L2224/0332 ,  H01L2224/0341 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05205 ,  H01L2224/05209 ,  H01L2224/05211 ,  H01L2224/05213 ,  H01L2224/05318 ,  H01L2224/05324 ,  H01L2224/05338 ,  H01L2224/05339 ,  H01L2224/05344 ,  H01L2224/05347 ,  H01L2224/05355 ,  H01L2224/0536 ,  H01L2224/05366 ,  H01L2224/05369 ,  H01L2224/05562 ,  H01L2224/0569 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81375 ,  H01L2224/81395 ,  H01L2224/81505 ,  H01L2224/81509 ,  H01L2224/81511 ,  H01L2224/81513 ,  H01L2224/81618 ,  H01L2224/81624 ,  H01L2224/81638 ,  H01L2224/81639 ,  H01L2224/81644 ,  H01L2224/81647 ,  H01L2224/81655 ,  H01L2224/8166 ,  H01L2224/81666 ,  H01L2224/81669 ,  H01L2224/831 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2933/0016 ,  H01L2933/0066 ,  Y02E10/547 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2224/05552

Abstract: An electronic device includes a substrate (11, 14B) and an electronic component (141-146, 14A, 14C, 140). The substrate (11, 14B) has a metallization trace (12, 12n, 12p). The metallization trace (12, 12n, 12p) has a metallization layer (121, 121n, 121p) and a synthetic resin layer (122, 122n, 122p). The metallization layer (121, 121n, 121p) has a high-melting-point metallic component (124) and a low-melting-point metallic component (123). The high-melting-point metallic component (124) and the low-melting-point metallic component (123) are diffusion bonded together and adhered to a surface of the substrate (11, 14B). The synthetic resin layer (122, 122n, 122p) is formed simultaneously with the metallization layer (121, 121n, 121p) to cover a surface of the metallization layer (121, 121n, 121p) with a thickness in the range of 5 nm to 1000 nm, preferably 5 nm to 500 nm. The electronic component (141-146, 14A, 14C, 140) is electrically connected to the metallization layer (121, 121n, 121p). The high-melting-point metallic particles (124) and the low-melting-point metallic particles (123) may have a nanocomposite structure.

公开(公告)号：JP2012174332A

公开(公告)日：2012-09-10

申请号：JP2011031643

申请日：2011-02-17

Applicant: Fujitsu Ltd ,  富士通株式会社

Inventor： YAMAGAMI TAKATOYO ,  KUBOTA TAKASHI ,  ISHIKAWA KUNIKO ,  KITAJIMA MASAYUKI

IPC: H01B1/22 ,  H01B1/00 ,  H01L21/60 ,  H05K3/34

CPC classification number: H01L24/13 ,  B22F1/0014 ,  B22F1/025 ,  B23K35/262 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/302 ,  C22C9/00 ,  C23C24/106 ,  H01L23/49811 ,  H01L23/49883 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0568 ,  H01L2224/05686 ,  H01L2224/1131 ,  H01L2224/1132 ,  H01L2224/11502 ,  H01L2224/13017 ,  H01L2224/13144 ,  H01L2224/13599 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13613 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13709 ,  H01L2224/13711 ,  H01L2224/13713 ,  H01L2224/13809 ,  H01L2224/13811 ,  H01L2224/13813 ,  H01L2224/13839 ,  H01L2224/13844 ,  H01L2224/13847 ,  H01L2224/13899 ,  H01L2224/13913 ,  H01L2224/13939 ,  H01L2224/13944 ,  H01L2224/13947 ,  H01L2224/16058 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16507 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81024 ,  H01L2224/81055 ,  H01L2224/81075 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/812 ,  H01L2224/8121 ,  H01L2224/8123 ,  H01L2224/81509 ,  H01L2224/81511 ,  H01L2224/81513 ,  H01L2224/81639 ,  H01L2224/81644 ,  H01L2224/81647 ,  H01L2224/81699 ,  H01L2224/81711 ,  H01L2224/81713 ,  H01L2224/81739 ,  H01L2224/81744 ,  H01L2224/8181 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/15738 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/01007 ,  H01L2924/01008 ,  H01L2924/01018 ,  H01L2924/01083 ,  H01L2924/01031 ,  H01L2924/0103 ,  H01L2924/053 ,  H01L2224/13099 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a conductive jointing material whereby a conductive jointing material supply process for depositing the conductive jointing material while supplying the conductive jointing material to the electrode of a substrate and a transfer process for transferring the conductive jointing material to the terminal of an electronic component by fusing it once can be selected, and the electronic component can be efficiently jointed to the substrate at low temperatures of 150°C or lower, and to provide a method of jointing a conductor and a method of manufacturing a semiconductor.SOLUTION: The conductive jointing material contains a metal component comprising a high melting-point metal particle having a melting point of 150°C or higher, an intermediate melting-point metal particle having a melting point of not less than 80°C and not more than 139°C, and a low melting-point metal particle having a melting point of 79°C or lower. The metal component is preferably a multi-layer metal particle having an intermediate melting-point metal layer formed from the intermediate melting-point metal particle, and a low melting-point metal layer formed from the low melting-point particle in this order on the surface of the high melting-point metal particle.

Abstract translation: 要解决的问题：提供一种导电接合材料，由此在将导电接合材料提供给基板的电极的同时提供用于沉积导电接合材料的导电接合材料供应工艺以及用于将导电接合材料转印到 可以选择通过熔化一次的电子部件的端子，并且可以在150℃或更低的低温下将电子部件有效地接合到基板，并且提供一种连接导体的方法和制造方法 半导体。 解决方案：导电接合材料含有包含熔点为150℃以上的高熔点金属颗粒的金属组分，熔点不低于80℃的中间熔点金属颗粒 不高于139℃，熔点为79℃以下的低熔点金属粒子。 金属成分优选为具有由中间熔点金属粒子形成的中间熔点金属层的多层金属粒子和由低熔点粒子形成的低熔点金属层， 高熔点金属颗粒的表面。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2013229376A

公开(公告)日：2013-11-07

申请号：JP2012098837

申请日：2012-04-24

Applicant: Napura:Kk ,  有限会社 ナプラ

Inventor： SEKINE SHIGENOBU ,  SEKINE YURINA

IPC: H05K1/09 ,  H05K3/28

CPC classification number: H01L23/48 ,  H01B1/22 ,  H01L21/4867 ,  H01L21/563 ,  H01L23/498 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49883 ,  H01L23/49894 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/16 ,  H01L31/022425 ,  H01L31/0682 ,  H01L33/62 ,  H01L2224/0332 ,  H01L2224/0341 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05205 ,  H01L2224/05209 ,  H01L2224/05211 ,  H01L2224/05213 ,  H01L2224/05318 ,  H01L2224/05324 ,  H01L2224/05338 ,  H01L2224/05339 ,  H01L2224/05344 ,  H01L2224/05347 ,  H01L2224/05355 ,  H01L2224/0536 ,  H01L2224/05366 ,  H01L2224/05369 ,  H01L2224/05562 ,  H01L2224/0569 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81375 ,  H01L2224/81395 ,  H01L2224/81505 ,  H01L2224/81509 ,  H01L2224/81511 ,  H01L2224/81513 ,  H01L2224/81618 ,  H01L2224/81624 ,  H01L2224/81638 ,  H01L2224/81639 ,  H01L2224/81644 ,  H01L2224/81647 ,  H01L2224/81655 ,  H01L2224/8166 ,  H01L2224/81666 ,  H01L2224/81669 ,  H01L2224/831 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2933/0016 ,  H01L2933/0066 ,  Y02E10/547 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2224/05552

Abstract: PROBLEM TO BE SOLVED: To provide an electronic apparatus in which when connecting an external electric conductor or an electronic component to metalized wiring, it is possible to ensure oxidation resistance and to securely ensure electrical conduction between them.SOLUTION: A base plate 11 has metalized wiring 12. The metalized wiring 12 includes a metalized layer 121 and a synthetic resin film 122. The metalized layer 121 includes a high melting-point metal component and a low melting-point metal component, and the high melting-point metal component and the low melting-point metal component are diffusion-bonded to each other. The synthetic resin film 122 covers a surface of the metalized layer 121 and has a film thickness ranging 5 nm to 1000 nm.

Abstract translation: 要解决的问题：为了提供一种电子设备，其中当将外部电导体或电子部件连接到金属化布线时，可以确保抗氧化性并且可靠地确保它们之间的导电。解决方案：基板11具有金属化 金属化布线12包括金属化层121和合成树脂膜122.金属化层121包括高熔点金属成分和低熔点金属成分，高熔点金属成分和高熔点金属成分 低熔点金属成分彼此扩散接合。 合成树脂膜122覆盖金属化层121的表面，膜厚为5nm〜1000nm。