公开(公告)号：US20250038016A1

公开(公告)日：2025-01-30

申请号：US18707165

申请日：2022-09-28

Applicant: AP SYSTEMS INC.

Inventor： Dae Ryong LEE ,  Sang Hyun JI ,  Chang Kyo KIM

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/66

Abstract: The present inventive concept relates to a substrate processing apparatus and a substrate processing method, which can accurately measure temperature in even a low-temperature region, thus making it possible to efficiently manage heat. The substrate processing apparatus comprises: a chamber for providing a processing space in which a substrate is processed; a substrate support provided in the processing space of the chamber in order to support the substrate; a heater provided with a plurality of semiconductor laser modules that emit light toward a first surface of the substrate; and a pyrometer which is provided on the side of a second surface of the substrate facing the first surface and detects light emitted from the substrate to measure the temperature of the substrate. The main light-emitting wavelength of the plurality of semiconductor laser modules may be shorter than the measurement wavelength of the pyrometer.

公开(公告)号：US11967492B2

公开(公告)日：2024-04-23

申请号：US17495796

申请日：2021-10-06

Applicant: AP SYSTEMS INC.

Inventor： Byoung Il Lee ,  Chang Kyo Kim ,  Chang Min Kwon ,  Seung Won Yu

IPC: H01J37/32 ,  C23C16/509

CPC classification number: H01J37/32899 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32568

Abstract: The present disclosure relates to a thin film manufacturing apparatus including a chamber having an inner process space of a substrate, a substrate support unit connected to the chamber to support the substrate in the chamber, a heat source unit connected to the chamber and disposed opposite to the substrate support unit, a plasma generation unit connected to one side of the chamber to supply radicals between the substrate support unit and the heat source unit, and a baffle connected to the chamber and including a movement passage of the radicals therein and a plurality of first exhaust holes communicating with the movement passage, which are formed in a top surface thereof. The thin film manufacturing apparatus may improve uniformity of the thin film formed on the substrate.

公开(公告)号：US20220122824A1

公开(公告)日：2022-04-21

申请号：US17495796

申请日：2021-10-06

Applicant: AP SYSTEMS INC.

Inventor： Byoung Il Lee ,  Chang Kyo Kim ,  Chang Min Kwon ,  Seung Won Yu

IPC: H01J37/32 ,  C23C16/509

Abstract: The present disclosure relates to a thin film manufacturing apparatus including a chamber having an inner process space of a substrate, a substrate support unit connected to the chamber to support the substrate in the chamber, a heat source unit connected to the chamber and disposed opposite to the substrate support unit, a plasma generation unit connected to one side of the chamber to supply radicals between the substrate support unit and the heat source unit, and a baffle connected to the chamber and including a movement passage of the radicals therein and a plurality of first exhaust holes communicating with the movement passage, which are formed in a top surface thereof. The thin film manufacturing apparatus may improve uniformity of the thin film formed on the substrate.

公开(公告)号：US10680177B2

公开(公告)日：2020-06-09

申请号：US15744029

申请日：2016-08-04

Applicant: AP SYSTEMS INC.

Inventor： Jong-Kab Park ,  Bo-Ram Kim ,  Jun-Gyu Hur ,  Doh-Hoon Kim

IPC: B23K26/364 ,  C23C14/04 ,  H01L51/00 ,  B23K26/0622 ,  B23K26/082 ,  G03F7/30 ,  H01L51/56 ,  B23K101/40

Abstract: The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a laser-processed pattern by irradiating a laser beam from above a base; and forming a wet-etched pattern that continues from the laser-processing pattern, by performing wet etching from above the base or from below the base on which the laser-processed pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.

公开(公告)号：US10428415B2

公开(公告)日：2019-10-01

申请号：US15743944

申请日：2016-08-04

Applicant: AP SYSTEMS INC.

Inventor： Jong-Kab Park ,  Bo-Ram Kim ,  Jun-Gyu Hur ,  Doh-Hoon Kim

IPC: C23C14/04 ,  H01L21/027 ,  H01L21/033 ,  G03F7/095 ,  G03F7/12 ,  B23K26/352 ,  H01L21/31 ,  H01L51/00

Abstract: The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a wet-etched pattern by performing wet etching from above a base; and forming a laser-processed pattern that continues from the wet-etched pattern, by performing laser processing from above the base or from below the base on which the wet-etched pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.

公开(公告)号：US10106914B2

公开(公告)日：2018-10-23

申请号：US15081836

申请日：2016-03-25

Applicant: AP SYSTEMS INC.

Inventor： Pil Seong Jeong ,  Sang Hyun Ji ,  Sung Yong Lee ,  Yong Woo Han

IPC: C30B29/06 ,  H01L21/67 ,  H01L29/66 ,  C23C16/56 ,  C23C16/24 ,  C30B28/08

Abstract: The present disclosure controls the heat source unit such that a to-be-processed object in which a hydrogen-containing to-be-processed layer is formed is irradiated with light in two stages, and thus the electrical characteristics of a semiconductor device may be suppressed and prevented from being deteriorated due to hydrogen. That is, ultraviolet light (UV) which is firstly radiated may induce a chemical reaction for separating Si—H bonds in the to-be-processed layer, and infrared light (IR) which is secondly radiated may induce a thermal reaction for vaporizing the separated hydrogen from the Si—H bonds. As such, both a chemical reaction for separating bonds of hydrogen and other ions in the to-be-processed layer and a thermal reaction for vaporizing hydrogen are performed, and thus hydrogen may be more easily removed than a temperature at which hydrogen is vaporized from the to-be-processed layer by only a thermal reaction.

公开(公告)号：US20160284562A1

公开(公告)日：2016-09-29

申请号：US15081836

申请日：2016-03-25

Applicant: AP SYSTEMS INC.

Inventor： Pil Seong JEONG ,  Sang Hyun JI ,  Sung Yong LEE ,  Yong Woo HAN

IPC: H01L21/324 ,  H01L21/477 ,  C30B29/06 ,  C23C16/56 ,  C23C16/24 ,  C30B28/08 ,  H01L21/67 ,  H01L29/66

CPC classification number: C30B29/06 ,  C23C16/24 ,  C23C16/46 ,  C23C16/56 ,  C30B28/08 ,  H01L21/67115 ,  H01L27/1285 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/66765

Abstract: The present disclosure controls the heat source unit such that a to-be-processed object in which a hydrogen-containing to-be-processed layer is formed is irradiated with light in two stages, and thus the electrical characteristics of a semiconductor device may be suppressed and prevented from being deteriorated due to hydrogen. That is, ultraviolet light (UV) which is firstly radiated may induce a chemical reaction for separating Si—H bonds in the to-be-processed layer, and infrared light (IR) which is secondly radiated may induce a thermal reaction for vaporizing the separated hydrogen from the Si—H bonds. As such, both a chemical reaction for separating bonds of hydrogen and other ions in the to-be-processed layer and a thermal reaction for vaporizing hydrogen are performed, and thus hydrogen may be more easily removed than a temperature at which hydrogen is vaporized from the to-be-processed layer by only a thermal reaction.

Abstract translation: 本公开控制热源单元，使得其中形成有含氢待处理层的被处理物体被两次照射，因此半导体器件的电特性可以是 抑制和防止由于氢而劣化。 也就是说，首先辐射的紫外线（UV）可能引起用于分离被处理层中的Si-H键的化学反应，并且第二次辐射的红外光（IR）可能引起热反应， 从Si-H键分离出氢。 因此，进行用于分离待处理层中的氢和其它离子的键的化学反应和用于汽化氢的热反应，因此氢可以比从氢气蒸发的温度更容易地除去 待处理层仅通过热反应。

公开(公告)号：US09400425B2

公开(公告)日：2016-07-26

申请号：US14255557

申请日：2014-04-17

Applicant: AP Systems Inc.

Inventor： Sung Ho Kwak ,  Min Young Cho

IPC: B08B7/00 ,  G03F1/82

CPC classification number: G03F1/82 ,  B08B7/0042

Abstract: This invention relates to an apparatus and method for cleaning a photomask. This apparatus, suitable for use in removing an adhesive residue from a photomask, includes a photomask disposed such that a surface thereof on which an adhesive residue is left behind is directed downwards, a metal plate formed adjacent to the adhesive residue, and a laser generator for irradiating a laser onto the metal plate so that the adhesive residue is removed by heat generated from the metal plate.

Abstract translation: 本发明涉及一种清洁光掩模的装置和方法。 适用于从光掩模中去除粘合剂残留物的该装置包括光掩模，该光掩模被设置为使得其上残留有粘合剂残留物的表面向下指向，邻近粘合残渣形成的金属板，以及激光发生器 用于将激光照射到金属板上，使得通过从金属板产生的热量去除粘合剂残留物。

公开(公告)号：US20250076906A1

公开(公告)日：2025-03-06

申请号：US18803348

申请日：2024-08-13

Applicant: AP SYSTEMS INC.

Inventor： Sang Hyun JI ,  Dae Ryong LEE ,  Yong Soo MOON

IPC: G05D23/20 ,  H01L21/67

Abstract: The present disclosure relates to a power control device for temperature control capable of phase control compensation according to power fluctuations, a thermal processing system having the same, and a temperature control method for the thermal processing system. The power control device for temperature control includes a power control unit configured to control an amount of power supplied to a heating source by controlling a phase of AC power supplied from a power source and a power measurement unit connected to the power source and configured to measure the AC power, wherein the power control unit controls the phase of the AC power by compensating a phase angle according to a difference between a reference power value and the measured value measured by the power measurement unit.

公开(公告)号：US20220128484A1

公开(公告)日：2022-04-28

申请号：US17507797

申请日：2021-10-21

Applicant: AP SYSTEMS INC.

Inventor： Yong Soo MOON ,  Hahn Joo YOON ,  Chan Ho HONG ,  Seung Hwan LEE ,  Oh Seung KWON

IPC: G01N21/95 ,  G01N21/88

Abstract: Provided are an apparatus for processing a substrate and a method for measuring a temperature of the substrate. The apparatus for processing the substrate includes a temperature measurement part and a light-transmitting shield plate. The temperature measurement part includes a light source, a light receiving part configured to receive reflected light reflected by the substrate or the shield plate among the light irradiated from the light source, and a radiant light emitted from the substrate to measure a quantity of the reflected light and an intensity of the radiant light and a temperature calculation part configured to calculate the temperature of the substrate, to which a contamination level of the shield plate is reflected, by using the quantity of the reflected light and the intensity of the radiant light.