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    Passivation layer for group III-V semiconductor devices
    3.
    发明授权
    Passivation layer for group III-V semiconductor devices 有权
    III-V族半导体器件的钝化层

    公开(公告)号：US06998320B2

    公开(公告)日：2006-02-14

    申请号：US10422201

    申请日：2003-04-23

    申请人： Martha R. Krueger ,  Andrew N. MacInnes

    发明人： Martha R. Krueger ,  Andrew N. MacInnes

    IPC分类号： H01L21/00

    CPC分类号： H01L29/66318 ,  H01L23/3171 ,  H01L29/7371 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A passivation layer for a heterojunction bipolar transistor (HBT) is formed from a relatively high bandgap material that is lattice-matched to the HBT components it passivates. By selecting the passivation layer to have a higher bandgap than the HBT components, minority carriers are contained within the HBT by the passivation layer. At the same time, the lattice matching of the passivation layer ensures a robust bond that prevents the subsequent formation of dangling bonds at the exterior surfaces of the base and collector (and/or other passivated surfaces), thereby minimizing surface leakage currents.

    摘要翻译： 用于异质结双极晶体管（HBT）的钝化层由与其钝化的HBT组分晶格匹配的相对较高的带隙材料形成。 通过选择钝化层具有比HBT成分更高的带隙，少数载流子被钝化层包含在HBT内。 同时，钝化层的晶格匹配确保了牢固的结合，防止随后在基底和集电体（和/或其他钝化表面）的外表面形成悬挂键，从而最小化表面泄漏电流。

    Chemical vapor deposition from single organometallic precursors
    4.
    发明授权
    Chemical vapor deposition from single organometallic precursors 失效
    来自单一有机金属前体的化学气相沉积

    公开(公告)号：US5300320A

    公开(公告)日：1994-04-05

    申请号：US903256

    申请日：1992-06-23

    申请人： Andrew R. Barron ,  Michael B. Power ,  Andrew N. MacInnes ,  Aloysius F. Hepp ,  Phillip P. Jenkins

    发明人： Andrew R. Barron ,  Michael B. Power ,  Andrew N. MacInnes ,  Aloysius F. Hepp ,  Phillip P. Jenkins

    IPC分类号： C23C16/30 ,  H01L21/20 ,  H01L21/285 ,  H01L21/314 ,  C23C16/00

    CPC分类号： H01L21/02568 ,  C23C16/30 ,  C23C16/305 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/0262

    摘要： A method is disclosed for forming a passivating/buffer film on a substrate. The method includes heating the substrate to a temperature which is sufficient to cause a volatilized organometallic precursor to pyrolyze and thereby form a passivating/buffer film on a substrate. The organometallic precursor is volatilized at a precursor source. A carrier gas is directed from a carrier gas source across the precursor source to conduct the volatilized precursor from the precursor source to the substrate. The volatilized precursor pyrolyzes and is deposited onto the substrate, thereby forming the passivating/buffer film on the substrate. The passivating/buffer film can be a cubic-phase passivating/buffer film. An oxide layer can also be formed on the passivating/buffer film to thereby form a composite of the substrate, the passivating/buffer film and the oxide layer. Cubic-phase passivating/buffer films formed by the method of the invention can be lattice-matched with the substrate. Electronic or electro-optical circuits or circuit elements can be formed which include passivating/buffer films formed by the method of the invention.

    摘要翻译： 公开了在基板上形成钝化/缓冲膜的方法。 该方法包括将基底加热到足以引起挥发的有机金属前体热解的温度，从而在基底上形成钝化/缓冲膜。 有机金属前驱体在前体源处挥发。 载气从载体气体源引导穿过前体源，以将挥发的前体从前体源引导到基底。 挥发的前体热解并沉积在基材上，从而在基材上形成钝化/缓冲膜。 钝化/缓冲膜可以是立方相钝化/缓冲膜。 也可以在钝化/缓冲膜上形成氧化物层，从而形成基板，钝化/缓冲膜和氧化物层的复合物。 通过本发明的方法形成的立方相钝化/缓冲膜可以与衬底晶格匹配。 可以形成包括通过本发明的方法形成的钝化/缓冲膜的电子或电光电路或电路元件。

    Method of coating carbon fibers with a carbide
    5.
    发明授权
    Method of coating carbon fibers with a carbide 失效
    用碳化物涂覆碳纤维的方法

    公开(公告)号：US5238711A

    公开(公告)日：1993-08-24

    申请号：US672378

    申请日：1991-03-20

    申请人： Andrew R. Barron ,  Andrew N. MacInnes ,  Thomas R. Gilbert

    发明人： Andrew R. Barron ,  Andrew N. MacInnes ,  Thomas R. Gilbert

    IPC分类号： C04B41/50 ,  C04B41/87

    CPC分类号： C04B41/87 ,  C04B41/5057

    摘要： A method for rapidly providing an impervious carbon substrate such as carbon fibers with a carbide coating, in atmospheric pressure, so as to provide a carbide layer bound to the carbon substrate. A carbide layer on the impervious carbon substrate is provided by coating the substrate with a concentrated solution of a carbide forming element in compound dissolved in a suitable solvent. The carbon substrate is heated to a temperature at which the carbide forming element in compound decomposes and chemically reacts with the carbon substrate to form the desired carbide layer.

    摘要翻译： 一种用于在大气压下快速提供具有碳化物涂层的碳纤维等不透水性碳基板的方法，以提供与碳基板结合的碳化物层。 通过用溶解在合适溶剂中的化合物形成元素的浓缩溶液涂覆基底来提供不渗透碳基底上的碳化物层。 将碳基板加热到化合物中的碳化物形成元素分解并与碳基板发生化学反应以形成所需的碳化物层的温度。