摘要:
Disclosed are thin film transistor devices incorporating a thin film semiconductor derived from carbonaceous nanomaterials and a dielectric layer composed of an organic-inorganic hybrid self-assembled multilayer.
摘要:
Disclosed are new semiconducting polymers. The polymers disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
摘要:
Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, field effect transistors, and photodetectors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.
摘要:
Disclosed are dendritic macromolecule-based dielectric compositions (e.g., formulations) and materials (e.g. films) and associated devices. The dendritic macromolecules have branched ends that are functionalized with an organic group that includes at least one 3-40 membered cyclic group.
摘要:
Provided are semiconductors prepared from an enantiomerically enriched mixture of a nitrogen-functionalized rylene bis(dicarboximide) compound. Specifically, the enantiomerically enriched mixture has unexpected electron-transport efficiency compared to the racemate or either of the enantiomers in optically pure form.
摘要:
Disclosed are thin film transistor devices incorporating a crosslinked inorganic-organic hybrid blend material as the gate dielectric. The blend material, obtained by thermally curing a mixture of an inorganic oxide precursor sol and an organosilane crosslinker at relatively low temperatures, can afford a high gate capacitance, a low leakage current density, and a smooth surface, and can be used to enable satisfactory transistor device performance at low operating voltages.
摘要:
Mono- and diimide perylene and naphthalene compounds, N- and/or core-substituted with electron-withdrawing groups, for use in the fabrication of various device structures.
摘要:
Disclosed are thionated fused-ring (aromatic) imides and diimides that can exhibit desirable electronic properties and can possess processing advantages including solution-processability and/or good stability at ambient conditions.
摘要:
Acene-based compounds that can be used to prepare n-type semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including n-type semiconductor materials prepared from these compounds also are provided.