公开(公告)号：US20110154843A1

公开(公告)日：2011-06-30

申请号：US12959564

申请日：2010-12-03

Applicant: Sungyong KO ,  Minshik KIM ,  Kwangmin LEE ,  Hwankook CHAE ,  Dongseok LEE ,  Keehyun KIM ,  Weonmook LEE

Inventor： Sungyong KO ,  Minshik KIM ,  Kwangmin LEE ,  Hwankook CHAE ,  Dongseok LEE ,  Keehyun KIM ,  Weonmook LEE

IPC: F25D31/00

CPC classification number: H01L21/6831

Abstract: An apparatus for controlling the temperature of an electrostatic chuck is provided. The apparatus includes an electrostatic chuck including, as a fluid channel part for circulating a refrigerant, a first fluid channel formed in an outer circumference region of the internal and a second fluid channel formed in the whole internal region, and one or more chillers for supplying refrigerant controlled to different temperatures through the first fluid channel or the second fluid channel. The first and second fluid channels are formed in two up/down stages within the electrostatic chuck, thereby being independently capable of the temperatures of a center part and edge part of a wafer.

Abstract translation: 提供一种用于控制静电卡盘的温度的装置。 该装置包括静电卡盘，该静电卡盘包括作为用于循环制冷剂的流体通道部分，形成在内部的外周区域中形成的第一流体通道和形成在整个内部区域中的第二流体通道，以及一个或多个用于供给的冷却器 制冷剂通过第一流体通道或第二流体通道控制到不同的温度。 第一和第二流体通道形成在静电卡盘内的两个上/下级中，从而独立地能够承受晶片的中心部分和边缘部分的温度。

公开(公告)号：US08652296B2

公开(公告)日：2014-02-18

申请号：US12871109

申请日：2010-08-30

Applicant: Minshik Kim ,  Sungyong Ko ,  Hwankook Chae ,  Kunjoo Park ,  Keehyun Kim ,  Weonmook Lee

Inventor： Minshik Kim ,  Sungyong Ko ,  Hwankook Chae ,  Kunjoo Park ,  Keehyun Kim ,  Weonmook Lee

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32449 ,  H01J37/3244

Abstract: A side gas injector for a plasma reaction chamber is provided. The side gas injector includes a circular distribution plate and a cover plate. The circular distribution plate includes an injection hole for injecting a reaction gas and a distribution channel part for distributing the reaction gas such that the reaction gas introduced from the injection hole can be radially simultaneously jetted in a plurality of positions along an inner circumference surface of the distribution plate. The cover plate is coupled to a top of the distribution plate and seals a top of the distribution channel part.

Abstract translation: 提供了一种用于等离子体反应室的侧气体喷射器。 侧气体喷射器包括圆形分配板和盖板。 圆形分配板包括用于喷射反应气体的喷射孔和用于分配反应气体的分配通道部分，使得从喷射孔引入的反应气体可沿径向同时喷射在沿着内部圆周表面的多个位置 配电盘。 盖板联接到分配板的顶部并密封分配通道部分的顶部。

公开(公告)号：US20110155694A1

公开(公告)日：2011-06-30

申请号：US12949139

申请日：2010-11-18

Applicant: Hyeokjin JANG ,  Minshik KIM ,  Kwangmin LEE ,  Sungyong KO ,  Hwankook CHAE ,  Kunjoo PARK ,  Keehyun KIM ,  Weonmook LEE

Inventor： Hyeokjin JANG ,  Minshik KIM ,  Kwangmin LEE ,  Sungyong KO ,  Hwankook CHAE ,  Kunjoo PARK ,  Keehyun KIM ,  Weonmook LEE

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/321 ,  H01J37/32266

Abstract: A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.

Abstract translation: 提供等离子体反应器和使用其的蚀刻方法。 该方法包括：改变连接到RF源电源单元的感应线圈的数量或排列结构的第一改变步骤，施加RF源功率并产生高密度等离子体的步骤;蚀刻第一蚀刻靶 工件的层，停止施加RF源功率的第一停止步骤，改变感应线圈的数量或排列结构的第二改变步骤，向相应的感应线圈施加RF源功率并产生低密度等离子体的步骤， 蚀刻工件的第二蚀刻靶层的第二蚀刻步骤以及停止施加RF源功率的第二停止步骤。

公开(公告)号：US20090129997A1

公开(公告)日：2009-05-21

申请号：US12254686

申请日：2008-10-20

Applicant: Hwankook CHAE ,  Dongseok LEE ,  Heeseok MOON ,  Kunjoo PARK ,  Keehyun KIM ,  Weonmook LEE

Inventor： Hwankook CHAE ,  Dongseok LEE ,  Heeseok MOON ,  Kunjoo PARK ,  Keehyun KIM ,  Weonmook LEE

IPC: H05H1/48

CPC classification number: C23C16/4583 ,  C23C16/505 ,  H01J37/32009 ,  H01J37/32082

Abstract: A plasma chemical reactor includes a chamber for providing a plasma reaction space, and a cathode assembly coupled at one side to a wall surface of the chamber and supporting a substrate at the other side such that the substrate is positioned at a center inside the chamber, and installed to enable height adjustment such that the substrate can maintain a horizontal state.

Abstract translation: 等离子体化学反应器包括用于提供等离子体反应空间的室，以及在一侧耦合到室的壁表面并在另一侧支撑衬底的阴极组件，使得衬底位于室内的中心， 并安装成能够进行高度调节，使得基板可以保持水平状态。

公开(公告)号：US08815047B2

公开(公告)日：2014-08-26

申请号：US12254686

申请日：2008-10-20

Applicant: Hwankook Chae ,  Dongseok Lee ,  Heeseok Moon ,  Kunjoo Park ,  Keehyun Kim ,  Weonmook Lee

Inventor： Hwankook Chae ,  Dongseok Lee ,  Heeseok Moon ,  Kunjoo Park ,  Keehyun Kim ,  Weonmook Lee

IPC: C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  C23C16/505 ,  C23C16/458

CPC classification number: C23C16/4583 ,  C23C16/505 ,  H01J37/32009 ,  H01J37/32082

Abstract: A plasma chemical reactor includes a chamber for providing a plasma reaction space, and a cathode assembly coupled at one side to a wall surface of the chamber and supporting a substrate at the other side such that the substrate is positioned at a center inside the chamber, and installed to enable height adjustment such that the substrate can maintain a horizontal state.

Abstract translation: 等离子体化学反应器包括用于提供等离子体反应空间的室，以及在一侧耦合到室的壁表面并在另一侧支撑衬底的阴极组件，使得衬底位于室内的中心， 并安装成能够进行高度调节，使得基板可以保持水平状态。

公开(公告)号：US08158068B2

公开(公告)日：2012-04-17

申请号：US12416658

申请日：2009-04-01

Applicant: Kunjoo Park ,  Hwankook Chae ,  Sungyong Ko ,  Keehyun Kim ,  Weonmook Lee

Inventor： Kunjoo Park ,  Hwankook Chae ,  Sungyong Ko ,  Keehyun Kim ,  Weonmook Lee

IPC: B01J19/08

CPC classification number: H01J37/32633 ,  H01J37/32623

Abstract: A plasma chemical reactor is provided. The reactor includes a chamber, a cathode assembly, and a baffle plate. The chamber forms a plasma reaction space. The cathode assembly includes a cathode support shaft and a substrate support. The cathode support shaft is coupled at one side to a wall surface of the chamber. The substrate support is coupled to the other side of the cathode support shaft and supports the substrate. The baffle plate is out inserted and coupled to the substrate support, and has a plurality of vents arranged to be spaced apart and through formed such that reaction gas can pass through, and the vents asymmetrically arranged and formed to get a vent area smaller at an opposite side than a top side of the cathode support shaft.

Abstract translation: 提供等离子体化学反应器。 反应器包括室，阴极组件和挡板。 室形成等离子体反应空间。 阴极组件包括阴极支撑轴和衬底支撑件。 阴极支撑轴在一侧连接到腔室的壁表面。 衬底支撑件耦合到阴极支撑轴的另一侧并支撑衬底。 挡板被插入并联接到基板支撑件，并且具有多个通风口，其布置成间隔开并形成为使得反应气体可以通过，并且通风口不对称地布置和形成，以使排气面积在 与阴极支撑轴的顶侧相对。

公开(公告)号：US20110203735A1

公开(公告)日：2011-08-25

申请号：US13032861

申请日：2011-02-23

Applicant: Seongsul SEO ,  Sungyong KO ,  Yunsook CHAE ,  Hwankook CHAE ,  Keehyun KIM ,  Weonmook LEE

Inventor： Seongsul SEO ,  Sungyong KO ,  Yunsook CHAE ,  Hwankook CHAE ,  Keehyun KIM ,  Weonmook LEE

IPC: C23F1/08

CPC classification number: H01L21/67069 ,  H01J37/3244 ,  H01J37/32449

Abstract: A gas injection system provided in a plasma etching equipment is provided. The system includes a top gas injector for supplying a reaction gas at a top of a chamber, and a side gas injector for supplying a tuning gas from a side surface of the chamber or a backside gas injector upward jetting a tuning gas from a lower side of a wafer. The side gas injector or backside gas injector forms a plurality of jets in a radial shape and simultaneously installs the jets adjacently to an edge part of a wafer such that a tuning gas is jetted adjacently to the edge part of the wafer, thereby being capable of easily controlling a an etch rate or CD uniformity or profile of the edge part.

Abstract translation: 提供了一种设置在等离子体蚀刻设备中的气体注入系统。 该系统包括用于在室的顶部供应反应气体的顶部气体喷射器和用于从腔室的侧表面或后侧气体喷射器供应调谐气体的侧气体喷射器，其向下喷射调节气体， 的晶片。 侧气体喷射器或背侧气体喷射器形成径向形状的多个射流，并且同时将射流相对于晶片的边缘部分安装，使得调谐气体相邻地喷射到晶片的边缘部分，从而能够 容易地控制边缘部分的蚀刻速率或CD均匀性或轮廓。

公开(公告)号：US08323522B2

公开(公告)日：2012-12-04

申请号：US12949139

申请日：2010-11-18

Applicant: Hyeokjin Jang ,  Minshik Kim ,  Kwangmin Lee ,  Sungyong Ko ,  Hwankook Chae ,  Kunjoo Park ,  Keehyun Kim ,  Weonmook Lee

Inventor： Hyeokjin Jang ,  Minshik Kim ,  Kwangmin Lee ,  Sungyong Ko ,  Hwankook Chae ,  Kunjoo Park ,  Keehyun Kim ,  Weonmook Lee

IPC: G01L21/30 ,  B44C1/22

CPC classification number: H01L21/31116 ,  H01J37/321 ,  H01J37/32266

Abstract: A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.

Abstract translation: 提供等离子体反应器和使用其的蚀刻方法。 该方法包括：改变连接到RF源电源单元的感应线圈的数量或排列结构的第一改变步骤，施加RF源功率并产生高密度等离子体的步骤;蚀刻第一蚀刻靶 工件的层，停止施加RF源功率的第一停止步骤，改变感应线圈的数量或排列结构的第二改变步骤，向相应的感应线圈施加RF源功率并产生低密度等离子体的步骤， 蚀刻工件的第二蚀刻靶层的第二蚀刻步骤以及停止施加RF源功率的第二停止步骤。

公开(公告)号：US20110079356A1

公开(公告)日：2011-04-07

申请号：US12871109

申请日：2010-08-30

Applicant: Minshik Kim ,  Sungyong Ko ,  Hwankook Chae ,  Kunjoo Park ,  Keehyun Kim ,  Weonmook Lee

Inventor： Minshik Kim ,  Sungyong Ko ,  Hwankook Chae ,  Kunjoo Park ,  Keehyun Kim ,  Weonmook Lee

IPC: C23F1/08

CPC classification number: H01J37/32449 ,  H01J37/3244

Abstract: A side gas injector for a plasma reaction chamber is provided. The side gas injector includes a circular distribution plate and a cover plate. The circular distribution plate includes an injection hole for injecting a reaction gas and a distribution channel part for distributing the reaction gas such that the reaction gas introduced from the injection hole can be radially simultaneously jetted in a plurality of positions along an inner circumference surface of the distribution plate. The cover plate is coupled to a top of the distribution plate and seals a top of the distribution channel part.

Abstract translation: 提供了一种用于等离子体反应室的侧气体喷射器。 侧气体喷射器包括圆形分配板和盖板。 圆形分配板包括用于喷射反应气体的喷射孔和用于分配反应气体的分配通道部分，使得从喷射孔引入的反应气体可沿径向同时喷射在沿着内部圆周表面的多个位置 配电盘。 盖板联接到分配板的顶部并密封分配通道部分的顶部。

公开(公告)号：US20110042009A1

公开(公告)日：2011-02-24

申请号：US12854371

申请日：2010-08-11

Applicant: Dongseok LEE ,  Hwankook CHAE ,  Heeseok MOON ,  Yunkwang CHOI

Inventor： Dongseok LEE ,  Hwankook CHAE ,  Heeseok MOON ,  Yunkwang CHOI

IPC: C23F1/08

CPC classification number: H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32834

Abstract: A plasma etching device is provided. The device includes a chamber, a cathode assembly, and an integral cathode liner. The chamber provides a plasma reaction space. The cathode assembly is positioned at an inner and central part of the chamber and supports a substrate. The integral cathode liner has a plurality of first vents and second vents formed at two levels and spaced apart respectively such that the uniformity of a gas flow and exhaust flow within the chamber is maintained, and is outer inserted to the cathode assembly and coupled at its lower end part to an inner surface of the chamber.

Abstract translation: 提供了一种等离子体蚀刻装置。 该装置包括室，阴极组件和整体阴极衬套。 该室提供等离子体反应空间。 阴极组件位于腔室的内部和中心部分并且支撑衬底。 整体阴极衬套具有分别形成在两个水平面并分开间隔开的多个第一通风口和第二通风口，使得腔室内的气体流量和排气流的均匀性得以保持，并且外部插入阴极组件并在其上耦合 下端部分到腔室的内表面。