公开(公告)号：US20210231588A1

公开(公告)日：2021-07-29

申请号：US17144679

申请日：2021-01-08

Applicant: KA IMAGING INC.

Inventor： Karim S. KARIM ,  Christopher C. SCOTT

IPC: G01N23/041 ,  A61B6/00

Abstract: A phase contrast X-ray imaging system for imaging an object including an X-ray source; and an X-ray detector having a 25 micron or less pixel pitch; wherein a distance between the X-ray source and the object is less than or equal to 10 cm. The X-ray detector further includes at least one single direct conversion layer to acquire at least one phase contrast edge-enhancement image.

公开(公告)号：US20210153835A1

公开(公告)日：2021-05-27

申请号：US17105579

申请日：2020-11-26

Applicant: KA IMAGING INC.

Inventor： Karim S. KARIM ,  Sebastian LOPEZ MAURINO

IPC: A61B6/00

Abstract: A method and system for spectral adjustment for a digital X-ray imaging system. The method includes obtaining a set of initial digital X-ray images and then weight factoring the images to generate a set of weight factored digital X-ray images. The weight-factored digital X-ray images are then combined to generate a composite image that is spectrally distinct from the set of initial digital X-ray images.

公开(公告)号：US10514471B2

公开(公告)日：2019-12-24

申请号：US15975366

申请日：2018-05-09

Applicant: KA IMAGING INC.

Inventor： Karim S. Karim ,  Sina Ghanbarzadeh

IPC: G01T1/24 ,  H01L27/146

Abstract: The disclosure is directed at a detector element that includes a conductive shield electrode, or shield electrode layer that can assist in reducing breakdown and also improve the reliability of the detector element. The detector element includes a substrate layer that supports at least two electrodes and a semiconducting layer. A shield electrode layer is deposited or patterned adjacent at least one of the two electrodes.

公开(公告)号：US20190374182A1

公开(公告)日：2019-12-12

申请号：US16436098

申请日：2019-06-10

Applicant: KA Imaging Inc.

Inventor： Karim S. Karim ,  Sebastian Lopez Maurino ,  Sina Ghanbarzadeh

IPC: A61B6/00

Abstract: The disclosure is directed at a method and apparatus for determining virtual outputs for a multi-energy x-ray apparatus. Based on the application that the x-ray apparatus is being used for, a general algorithm can be determined or selected. Inputs received from the x-ray apparatus can be substituted into the general algorithm to generate a virtual output algorithm for the x-ray apparatus. Virtual outputs can then be calculated using the virtual output algorithm.

公开(公告)号：US20190165007A1

公开(公告)日：2019-05-30

申请号：US16249251

申请日：2019-01-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  KA IMAGING INC.

Inventor： Chia Chiang LIN

IPC: H01L27/144 ,  H01L21/3213 ,  H01L31/18 ,  H01L29/45 ,  H01L27/12 ,  H01L31/20 ,  H01L29/786 ,  H01L23/31 ,  H01L21/311 ,  H01L31/0224 ,  H01L21/768 ,  H01L29/49

Abstract: Disclosed are an array substrate, a manufacturing method thereof, a sensor and a detection device. The array substrate includes: a base substrate; a thin-film transistor (TFT) being disposed on the base substrate and including a source electrode and an active layer; a passivation layer disposed on the TFT; a first metal layer disposed on the passivation layer; an insulating layer disposed on the first metal layer; a through hole structure running through the insulating layer, the first metal layer and the passivation layer; and a detection unit being disposed on the insulating layer and including a second metal layer, wherein the second metal layer makes direct contact with the source electrode via the through hole structure.

公开(公告)号：US20190113466A1

公开(公告)日：2019-04-18

申请号：US16050354

申请日：2018-07-31

Applicant: KA IMAGING INC.

Inventor： Karim S. KARIM ,  Christopher C. SCOTT

IPC: G01N23/041 ,  A61B6/00

Abstract: A phase contrast X-ray imaging system for imaging an object including an X-ray source; and an X-ray detector having a 25 micron or less pixel pitch; wherein a distance between the X-ray source and the object is less than or equal to 10 cm.

公开(公告)号：US10269837B2

公开(公告)日：2019-04-23

申请号：US15540411

申请日：2016-09-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  KA IMAGING INC.

Inventor： Chia Chiang Lin

IPC: G01L9/08 ,  H01L31/02 ,  H01L31/20 ,  H01L27/144 ,  H01L29/786 ,  H01L31/0216 ,  H01L31/0376

Abstract: A sensor, a manufacturing method thereof and an electronic device. The sensor includes: a base substrate; a thin-film transistor (TFT) disposed on the base substrate and including a source electrode; a first insulation layer disposed on the TFT and provided with a first through hole running through the first insulation layer; a conductive layer disposed in the first through hole and on part of the first insulation layer and electrically connected with the source electrode via the first through hole; a bias electrode disposed on the first insulation layer and separate from the conductive layer; a sensing active layer respectively connected with the conductive layer and the bias electrode; and an auxiliary conductive layer disposed on the conductive layer. The sensor and the manufacturing method thereof improve the conductivity and ensure normal transmission of signals by arranging the auxiliary conductive layer on the conductive layer without addition of processes.

公开(公告)号：US10224353B2

公开(公告)日：2019-03-05

申请号：US15544704

申请日：2017-01-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  KA IMAGING INC.

Inventor： Chia Chiang Lin

IPC: H01L21/00 ,  H01L27/144 ,  H01L27/12 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/31 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/20 ,  H01L21/027

Abstract: Disclosed are an array substrate, a manufacturing method thereof, a sensor and a detection device. The array substrate includes: a base substrate; a thin-film transistor (TFT) being disposed on the base substrate and including a source electrode and an active layer; a passivation layer disposed on the TFT; a first metal layer disposed on the passivation layer; an insulating layer disposed on the first metal layer; a through hole structure running through the insulating layer, the first metal layer and the passivation layer; and a detection unit being disposed on the insulating layer and including a second metal layer, wherein the second metal layer makes direct contact with the source electrode via the through hole structure.

公开(公告)号：US20180061856A1

公开(公告)日：2018-03-01

申请号：US15538016

申请日：2016-05-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  KA IMAGING INC.

Inventor： Feng JIANG ,  Hui TIAN ,  Xiaolong ZHANG ,  Chia Chiang LIN

IPC: H01L27/12 ,  H01L21/027 ,  H01L21/311 ,  H01L27/144 ,  G02F1/1362 ,  H01L21/768 ,  H01L31/02 ,  G02F1/1368

CPC classification number: H01L27/124 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  H01L21/0274 ,  H01L21/3105 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/768 ,  H01L21/76816 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/1443 ,  H01L31/02005 ,  H01L31/02019

Abstract: A hole structure and a fabrication method thereof, an array substrate and a fabrication method thereof, a detection device and a display device are provided. The fabrication method of the hole structure includes: performing a first photolithography process on a first initial thin film with a pattern region of a mask to form a first thin film and a first hole located therein, and performing a second photolithography process on a second initial thin film covering the first thin film with the pattern region of the mask to form a second thin film and a second hole running through the second thin film and communicating with the first hole; a dimension of a second opening of the second hole away from a base substrate is larger than a dimension of a first opening of the second hole close to the base substrate.

公开(公告)号：US09698193B1

公开(公告)日：2017-07-04

申请号：US15266051

申请日：2016-09-15

Applicant: KA Imaging Inc.

Inventor： Karim S. Karim ,  Sina Ghanbarzadeh

IPC: H01L27/14 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/0216 ,  G01T1/20 ,  G01T1/24

CPC classification number: H01L27/14663 ,  G01T1/2018 ,  G01T1/241 ,  G01T1/247 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14652 ,  H01L27/14676 ,  H01L31/0216 ,  H01L31/02161 ,  H01L31/0224 ,  H01L31/022408 ,  H01L31/115

Abstract: A system and method for a multi-sensor pixel architecture for use in a digital imaging system is described. The system includes at least one semiconducting layer for absorbing radiation incident on opposites of the at least one semiconducting layer along with a set of electrodes on one side of the semiconducting layer for transmitting a signal associated with the radiation absorbed by the semiconducting layer.