公开(公告)号：US20090224229A1

公开(公告)日：2009-09-10

申请号：US12044091

申请日：2008-03-07

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H01L29/06 ,  H01L21/00

CPC分类号： H01L31/1035 ,  H01L31/0304 ,  Y02E10/544

摘要： The subject invention comprises the realization of P-on-N type II InAs/GaSb superlattice photodiodes. A high-quality InAsSb layer lattice-mismatched to GaSb is used as a buffer to prepare the surface of the substrate prior to superlattice growth. The InAsSb layer also serves as an effective n-contact layer. The contact layer has been optimized to improve device performance, most notably performance that is similar to traditional N-on-P structures.

摘要翻译： 本发明包括实现P-on-N型IIAsAs / GaSb超晶格光电二极管。 使用GaSb晶格失配的高品质InAsSb层作为缓冲液，以在超晶格生长之前制备衬底的表面。 InAsSb层也用作有效的n接触层。 接触层已经过优化，以提高设备性能，最显着的是与传统N-on-P结构相似的性能。

公开(公告)号：US07001794B2

公开(公告)日：2006-02-21

申请号：US10959270

申请日：2004-10-06

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L21/48

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L27/1465 ,  H01L27/14687 ,  H01L31/0304 ,  H01L2224/16225 ,  H01L2224/81193 ,  H01L2924/351 ,  Y02E10/544

摘要： The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.

摘要翻译： 本发明包括II型超晶格光子检测器和焦平面阵列及其制造方法。 该装置可以是具有II型带对准的二进制或三级系统。

公开(公告)号：US06610553B2

公开(公告)日：2003-08-26

申请号：US10154876

申请日：2002-05-24

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  H01S5/021 ,  H01S5/18361 ,  H01S5/34386

摘要： An Al-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as a conventional distributed Bragg reflector (DBR) 36 or less periods are then formed as the active layer. The DBRs are composed of repeating layers of a 69 nm period of GaAs and a 76 nm period of InGaP to form a superlattice as quarter wave thickness stacks. After the lower layer of n-type DBR is deposited by MOCVD, a lift-off procedure opens up windows in an evaporated layer of SiO2. The active region and upper p-type DBR is then deposited by MOCVD.

公开(公告)号：US06480520B1

公开(公告)日：2002-11-12

申请号：US09550665

申请日：2000-04-17

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H02S5183

CPC分类号： B82Y20/00 ,  H01S5/021 ,  H01S5/18361 ,  H01S5/34386

摘要： An A1-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as a conventional distributed Bragg reflector (DBR) 36 or less periods are then formed as the active layer. The DBRs are composed of repeating layers of a 69 nm period of GaAs and a 76 nm period of InGaP to form a superlattice as quarter wave thickness stacks. After the lower layer of n-type DBR is deposited by MOCVD, a lift-off procedure opens up windows in an evaporated layer of SiO2. The active region and upper p-type DBR is then deposited by MOCVD.

摘要翻译： 通过生长GaInP / GaAs作为常规分布式布拉格反射器（DBR），通过MOCVD方法生长不含A1的VCSEL，然后形成36个或更少的周期作为活性层。 DBR由69nm周期的GaAs和76nm周期的InGaP的重复层组成，以形成作为四分之一波长厚度叠层的超晶格。 在通过MOCVD沉积下层的n型DBR之后，剥离过程在SiO 2的蒸发层中打开窗口。 然后通过MOCVD沉积有源区和上p型DBR。

公开(公告)号：US6108360A

公开(公告)日：2000-08-22

申请号：US870985

申请日：1997-06-06

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H01S5/323 ,  H01S5/343 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/323 ,  H01S5/343 ,  H01S2302/00 ,  H01S5/34306

摘要： InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer. Further, the active layer of a DH structure can be doped with a p-type dopant, so that the dopant level of the active layer is at least one magnitude less than the dopant level of either confinement layer and the n-p junction is within the active layer and a higher power level and better efficiency is observed. A perfect lattice matching of the InAsSb contact layers and InAsSbP confinement layer of a DH structure is found to minimize the dislocation density at the InAsSb/InAsSbP interface. Decreasing the band-offset between the active layer and the confinement layers increases the brightness of the laser. A SCH laser of the subject invention can obtain a minimum discontinuity of conduction band between the confinement layers and the waveguide by adjusting the thickness of the waveguide and the number of quantum wells. The wavelength of the emitted light can be controlled, over the range of 3 .mu.m to 5 .mu.m by changing the material composition of the active layer, by changing the thickness of the quantum well, or by changing both parameters.

摘要翻译： InAsSb / InAsSbP / InAs双重异质结构（DH）和单独限制异质结构多量子阱（SCH-MQW）结构，其中通过改变As的比例可以调谐到3μm至5μm的特定波长的能力 ：活性层中的Sb。 此外，可以用p型掺杂剂掺杂DH结构的有源层，使得有源层的掺杂剂水平比限制层的掺杂剂水平低至少一个数量级，并且np结在活性层内 层和更高的功率水平和更好的效率。 发现InAsSb接触层和DH结构的InAsSbP限制层的完美晶格匹配使InAsSb / InAsSbP界面处的位错密度最小化。 降低有源层和约束层之间的带偏移增加了激光器的亮度。 本发明的SCH激光器可以通过调整波导的厚度和量子阱的数量来获得约束层和波导之间的导带的最小不连续性。 通过改变有源层的材料组成，通过改变量子阱的厚度，或通过改变两个参数，可以控制发射光的波长在3μm到5μm之间。

公开(公告)号：US07692183B2

公开(公告)日：2010-04-06

申请号：US12044091

申请日：2008-03-07

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H01L31/00

CPC分类号： H01L31/1035 ,  H01L31/0304 ,  Y02E10/544

摘要： The subject invention comprises the realization of P-on-N type II InAs/GaSb superlattice photodiodes. A high-quality InAsSb layer lattice-mismatched to GaSb is used as a buffer to prepare the surface of the substrate prior to superlattice growth. The InAsSb layer also serves as an effective n-contact layer. The contact layer has been optimized to improve device performance, most notably performance that is similar to traditional N-on-P structures.

摘要翻译： 本发明包括实现P-on-N型IIAsAs / GaSb超晶格光电二极管。 使用GaSb晶格失配的高品质InAsSb层作为缓冲液，以在超晶格生长之前制备衬底的表面。 InAsSb层也用作有效的n接触层。 接触层已经过优化，以提高设备性能，最显着的是与传统N-on-P结构相似的性能。

公开(公告)号：US07638791B2

公开(公告)日：2009-12-29

申请号：US12042804

申请日：2008-03-05

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H01L31/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/109

摘要： An improved photodiode and method of producing an improved photodiode comprising doping an InAs layer of an InAs/GaSb region situated on top of an InAs/GaSb:Be superlattice and below an InAs:Si/GaSb regions such that the quantum efficiency of the photodiode increases and dominant dark current mechanisms change from diffusion to band-to-band tunneling as the InAs layer is doped with Beryllium.

摘要翻译： 改进的光电二极管和制造改进的光电二极管的方法包括掺杂位于InAs / GaSb：Be超晶格顶部并且低于InAs：Si / GaSb区域的InAs / GaSb区域的InAs层，使得光电二极管的量子效率增加 并且当InAs层掺杂有铍时，显性暗电流机制从扩散转变为带 - 带隧穿。

公开(公告)号：US06750075B2

公开(公告)日：2004-06-15

申请号：US10156361

申请日：2002-05-28

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H01L2100

CPC分类号： H01L31/0352 ,  B82Y10/00 ,  H01L31/101 ,  H01L31/1844 ,  Y02E10/544

摘要： A heterostructure or multilayer semiconductor structure having lattice matched layers with different bandgaps is grown by MOCVD. More specifically, a wide bandgap material such as AlInSb or GaInSb is grown on a substrate to form a lower-contact layer. An n-type active layer is lattice matched to the lower contact layer. The active layer should be of a narrow bandgap material, such as InAsSb, InTlSb, InBiSb, or InBiAsSb. A p-type upper contact layer is then grown on the active layer and a multi-color infrared photodetector has been fabricated.

摘要翻译： 通过MOCVD生长具有不同带隙的晶格匹配层的异质结构或多层半导体结构。 更具体地，在衬底上生长诸如AlInSb或GaInSb的宽带隙材料以形成下接触层。 n型有源层与下接触层晶格匹配。 活性层应该是窄带隙材料，例如InAsSb，InTlSb，InBiSb或InBiAsSb。 然后在有源层上生长p型上接触层，并且制造了多色红外光电检测器。

公开(公告)号：US06577659B1

公开(公告)日：2003-06-10

申请号：US09617864

申请日：2000-07-17

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H01L3300

CPC分类号： H01S5/3235 ,  H01S5/3213

摘要： The subject invention comprises a high power MWIR laser grown as a Double Heterostructure by MOCVD

摘要翻译： 本发明包括通过MOCVD

公开(公告)号：US06570179B1

公开(公告)日：2003-05-27

申请号：US09548731

申请日：2000-04-13

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H01L2906

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3216 ,  H01S5/3409 ,  H01S5/3425 ,  H01S5/343 ,  H01S5/3432 ,  H01S5/34333 ,  H01S2304/025 ,  H01S2304/04 ,  H01S2304/06

摘要： A method for making of an optoelectronic device and the device therefor comprising confinement layers, waveguides and active layers, all of which comprise a superlattice of binary III-V compounds.

摘要翻译： 制造光电子器件的方法及其装置包括限制层，波导和有源层，它们都包含二元III-V族化合物的超晶格。