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    SEMICONDUCTOR DEVICE THAT DEGRADES LEAK CURRENT OF A TRANSISTOR
    3.
    发明申请
    SEMICONDUCTOR DEVICE THAT DEGRADES LEAK CURRENT OF A TRANSISTOR 有权
    降低晶体管漏电流的半导体器件

    公开(公告)号：US20100117161A1

    公开(公告)日：2010-05-13

    申请号：US12692387

    申请日：2010-01-22

    申请人： Mitsuyuki ASHIDA ,  Mototsugu Hamada

    发明人： Mitsuyuki ASHIDA ,  Mototsugu Hamada

    IPC分类号： H01L29/66

    CPC分类号： H03K19/0013

    摘要： A semiconductor device, has a main transistor that is a first-conductivity-type MOS transistor and has the drain connected to a first potential; a first switch circuit that is connected between the source of said main transistor and a second potential; a dummy transistor that is a first-conductivity-type MOS transistor whose source serves also as the source of said main transistor; and a second switch circuit that is connected between the drain of said dummy transistor and said first potential or said second potential.

    摘要翻译： 半导体器件具有作为第一导电型MOS晶体管的主晶体管，并且漏极连接到第一电位; 连接在所述主晶体管的源极和第二电位之间的第一开关电路; 作为第一导电型MOS晶体管的虚设晶体管，其源极也用作所述主晶体管的源极; 以及连接在所述虚拟晶体管的漏极与所述第一电位或所述第二电位之间的第二开关电路。

    Semiconductor integrated circuit device
    4.
    发明授权
    Semiconductor integrated circuit device 失效
    半导体集成电路器件

    公开(公告)号：US07606096B2

    公开(公告)日：2009-10-20

    申请号：US11872264

    申请日：2007-10-15

    申请人： Mototsugu Hamada ,  TakahirO Hirai ,  Shiho Nakamura ,  Hirofumi Morise ,  Keiko Abe

    发明人： Mototsugu Hamada ,  TakahirO Hirai ,  Shiho Nakamura ,  Hirofumi Morise ,  Keiko Abe

    IPC分类号： G11C7/00 ,  G11C11/00 ,  H03K3/02

    CPC分类号： G11C13/00 ,  G11C5/14 ,  G11C13/004 ,  G11C13/0069 ,  G11C14/009 ,  G11C2013/0042 ,  G11C2013/0054 ,  G11C2013/0073

    摘要： A semiconductor integrated circuit device, has a first variable resistor element and a second variable resistor element whose resistances are changed complementarily depending on a current; and a current path switching circuit that supplies said current from a power supply by switching between current paths according to whether a normal operation mode or a read mode is input externally, wherein said power supply is turned off and then turned on again in said normal operation mode, and in this state, data corresponding to the relationship between the magnitudes of the resistances of said first variable resistor element and said second variable resistor element is read in said read mode.

    摘要翻译： 半导体集成电路器件具有第一可变电阻器元件和第二可变电阻器元件，其电阻根据电流互补地改变; 以及电流路径切换电路，其通过根据正常操作模式还是读取模式在电流路径之间切换来从电源提供所述电流，其中所述电源在所述正常操作中被关闭然后再次导通 模式，并且在该状态下，在所述读取模式中读取与所述第一可变电阻元件和所述第二可变电阻元件的电阻的大小之间的关系对应的数据。

    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    5.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
    半导体集成电路设备

    公开(公告)号：US20080298117A1

    公开(公告)日：2008-12-04

    申请号：US11872264

    申请日：2007-10-15

    申请人： Mototsugu Hamada ,  Takahiro Hirai ,  Shiho Nakamura ,  Hirofumi Morise ,  Keiko Abe

    发明人： Mototsugu Hamada ,  Takahiro Hirai ,  Shiho Nakamura ,  Hirofumi Morise ,  Keiko Abe

    IPC分类号： G11C11/34

    CPC分类号： G11C13/00 ,  G11C5/14 ,  G11C13/004 ,  G11C13/0069 ,  G11C14/009 ,  G11C2013/0042 ,  G11C2013/0054 ,  G11C2013/0073

    摘要： A semiconductor integrated circuit device, has a first variable resistor element and a second variable resistor element whose resistances are changed complementarily depending on a current; and a current path switching circuit that supplies said current from a power supply by switching between current paths according to whether a normal operation mode or a read mode is input externally, wherein said power supply is turned off and then turned on again in said normal operation mode, and in this state, data corresponding to the relationship between the magnitudes of the resistances of said first variable resistor element and said second variable resistor element is read in said read mode.

    摘要翻译： 半导体集成电路器件具有第一可变电阻器元件和第二可变电阻器元件，其电阻根据电流互补地改变; 以及电流路径切换电路，其通过根据正常操作模式还是读取模式在电流路径之间切换来从电源提供所述电流，其中所述电源在所述正常操作中被关闭然后再次导通 模式，并且在该状态下，在所述读取模式中读取与所述第一可变电阻元件和所述第二可变电阻元件的电阻的大小之间的关系对应的数据。

    Semiconductor integrated circuit device
    6.
    发明申请
    Semiconductor integrated circuit device 有权
    半导体集成电路器件

    公开(公告)号：US20070075738A1

    公开(公告)日：2007-04-05

    申请号：US11502572

    申请日：2006-08-11

    申请人： Mototsugu Hamada ,  Tsuyoshi Nishikawa ,  Toshiyuki Furusawa

    发明人： Mototsugu Hamada ,  Tsuyoshi Nishikawa ,  Toshiyuki Furusawa

    IPC分类号： H03K19/177

    CPC分类号： H03K19/17736 ,  H03K19/1736 ,  H03K19/17728 ,  H03K19/1778

    摘要： A semiconductor integrated circuit device has a combinational logic circuit including one or plural logic cells connected in series. At least one of the logic cells has: a standard cell which includes a MIS transistor, the standard cell including an input terminal to which an output signal from a previous stage is inputted as an input signal and an output terminal, and the standard cell performing a predetermined logic operation based on the input signal and outputting a result of the logic operation as an output signal from the output terminal; a first conductivity-type first MIS transistor which is provided between the output terminal of the standard cell and a first power supply voltage, the first MIS transistor including a control terminal to which a circuit control signal is inputted, and the first MIS transistor supplying the first power supply voltage to the output terminal of the standard cell based on the circuit control signal in order to bring the standard cell into an operation-stopped state; and a second conductivity-type second MIS transistor which is provided between the standard cell and a second power supply voltage, the second MIS transistor including a control terminal to which the circuit control signal is inputted, and the second MIS transistor cutting off a leakage current of the MIS transistor in the standard cell based on the circuit control signal in order to bring the standard cell into the operation-stopped state.

    摘要翻译： 半导体集成电路器件具有包括串联连接的一个或多个逻辑单元的组合逻辑电路。 所述逻辑单元中的至少一个具有：包括MIS晶体管的标准单元，所述标准单元包括输入来自前一级的输出信号的输入端作为输入信号和输出端，所述标准单元执行 基于所述输入信号进行预定的逻辑运算，并输出所述逻辑运算的结果作为来自所述输出端子的输出信号; 设置在标准单元的输出端子与第一电源电压之间的第一导电型第一MIS晶体管，所述第一MIS晶体管包括输入电路控制信号的控制端子和提供电路控制信号的第一MIS晶体管 基于电路控制信号向标准单元的输出端施加第一电源电压，以使标准单元进入操作停止状态; 以及设置在所述标准单元和第二电源电压之间的第二导电型第二MIS晶体管，所述第二MIS晶体管包括输入所述电路控制信号的控制端子，所述第二MIS晶体管切断漏电流 的基于电路控制信号的标准单元中的MIS晶体管，以使标准单元进入操作停止状态。

    ANALOG SIGNAL PROCESSING CIRCUIT AND COMMUNICATION DEVICE THEREWITH
    7.
    发明申请
    ANALOG SIGNAL PROCESSING CIRCUIT AND COMMUNICATION DEVICE THEREWITH 审中-公开
    模拟信号处理电路及其通信设备

    公开(公告)号：US20070066254A1

    公开(公告)日：2007-03-22

    申请号：US11532346

    申请日：2006-09-15

    申请人： Koji Tsuchie ,  Mototsugu Hamada ,  Minoru Namekata ,  Yasuo Unekawa

    发明人： Koji Tsuchie ,  Mototsugu Hamada ,  Minoru Namekata ,  Yasuo Unekawa

    IPC分类号： H04B1/18

    CPC分类号： H04B1/28 ,  H04B1/0014 ,  H04B1/0032

    摘要： An analog signal processing circuit including: a frequency conversion unit for receiving a plurality of radio frequency signals having different center frequencies or a plurality of radio frequency signals having the same center frequencies but different amplitude-characteristics or phase-characteristics and converting the frequencies of the signals; a frequency selection unit for selecting a signal output from the frequency conversion unit at a predetermined band width; and an addition unit for adding a plurality of signals output from the frequency selection unit is provided.

    摘要翻译： 一种模拟信号处理电路，包括：频率转换单元，用于接收具有不同中心频率的多个射频信号或具有相同中心频率但具有不同幅度特性或相位特性的多个射频信号，并将 信号; 频率选择单元，用于以预定的频带宽度选择从频率转换单元输出的信号; 并且提供用于添加从频率选择单元输出的多个信号的加法单元。

    Semiconductor integrated circuit device
    8.
    发明申请
    Semiconductor integrated circuit device 有权
    半导体集成电路器件

    公开(公告)号：US20060267627A1

    公开(公告)日：2006-11-30

    申请号：US11439271

    申请日：2006-05-24

    申请人： Chen Teh ,  Mototsugu Hamada

    发明人： Chen Teh ,  Mototsugu Hamada

    IPC分类号： H03K19/003

    CPC分类号： H03K3/012 ,  H03K3/037 ,  H03K17/04106 ,  H03K17/102

    摘要： A semiconductor integrated circuit device includes a comparator for making a comparison between a logical value of an input signal and a logical value of an output signal and outputting a combination signal having a combination of the logical values; and a flip-flop circuit configured to maintain a state of the output signal with electric power for maintaining the state less than electric power for state transition of the output signal in the case where the combination of the logical values of the combination signal is a predetermined combination, and wherein the comparator outputs the combination signal having the predetermined combination to an input terminal portion in the case of determining that the input signal does not vary the state of the output signal based on a result of the comparison between the logical value of the input signal and the logical value of the output signal.

    摘要翻译： 半导体集成电路装置包括：比较器，用于比较输入信号的逻辑值和输出信号的逻辑值，并输出具有逻辑值组合的组合信号; 以及触发器电路，被配置为在组合信号的逻辑值的组合是预定的情况下，保持具有电力的输出信号的状态以保持小于输出信号的状态转换的电力的状态 组合，并且其中在确定输入信号不改变输出信号的状态的情况下，比较器将输出具有预定组合的组合信号输出到输入端子部分， 输入信号和输出信号的逻辑值。

    Semiconductor integrated circuit device
    9.
    发明授权
    Semiconductor integrated circuit device 有权
    半导体集成电路器件

    公开(公告)号：US06859648B2

    公开(公告)日：2005-02-22

    申请号：US10142050

    申请日：2002-05-10

    申请人： Mototsugu Hamada ,  Hiroki Ishikuro

    发明人： Mototsugu Hamada ,  Hiroki Ishikuro

    IPC分类号： H04B1/26 ,  H03D7/18 ,  H04B1/10 ,  H04B1/28

    CPC分类号： H04B1/28

    摘要： A semiconductor integrated circuit device includes a first phase shifter configured to make a phase difference of 90 degrees between local signals, first and second mixer circuits configured to mix the local signals with a received signal, a second phase shifter configured to make a phase difference of 90 degrees between output signals of the first and second mixer circuits to output first and second output signals, an adder configured to add the first and second output signals, a subtracter configured to subtract the first and second output signals, a signal intensity detector configured to compare between an intensity of an output signal of the subtracter with a reference level intensity, and a power supply control circuit configured to disable either of the first and second mixer circuits or either of the first and second mixer circuits and the first phase shifter according to a comparison result.

    摘要翻译： 一种半导体集成电路装置，包括：第一移相器，被配置为在本地信号之间产生90度的相位差，被配置为将本地信号与接收信号混合的第一和第二混频器电路;第二移相器， 输出第一和第二混合电路的输出信号之间的90度以输出第一和第二输出信号;加法器，被配置为添加第一和第二输出信号，减法器，被配置为减去第一和第二输出信号;信号强度检测器，被配置为 将减法器的输出信号的强度与参考电平强度进行比较，以及电源控制电路，被配置为根据第一和第二混频器电路或第一和第二混频器电路以及第一移相器中的任一个根据 比较结果。

    Semiconductor memory device
    10.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号：US06801449B2

    公开(公告)日：2004-10-05

    申请号：US10781905

    申请日：2004-02-20

    申请人： Hiroyuki Kobayashi ,  Mototsugu Hamada

    发明人： Hiroyuki Kobayashi ,  Mototsugu Hamada

    IPC分类号： G11C1100

    CPC分类号： G11C11/412 ,  H01L27/1104

    摘要： A semiconductor memory device according to an aspect of the present invention includes memory cells each having a data storage section which stores data and a transfer gate section which has a MOSFET of a first conductive type for writing the data to the data storage section and reading the data from the data storage section, wherein a potential corresponding to the data stored in the data storage section is applied as a substrate bias of the MOSFET.

    摘要翻译： 根据本发明的一个方面的半导体存储器件包括存储单元，每个存储器单元具有存储数据的数据存储部分和传输门极部分，该转移栅极部分具有第一导电类型的MOSFET，用于将数据写入数据存储部分并读取 来自数据存储部分的数据，其中应用与存储在数据存储部分中的数据相对应的电位作为MOSFET的衬底偏置。