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    End point detection for sputtering and resputtering
    1.
    发明授权
    End point detection for sputtering and resputtering 失效
    溅射和再溅射的终点检测

    公开(公告)号：US07048837B2

    公开(公告)日：2006-05-23

    申请号：US10659902

    申请日：2003-09-11

    Applicant: Sasson R. Somekh ,  Marc O. Schweitzer ,  John C. Forster ,  Zheng Xu ,  Roderick C. Mosely ,  Barry L. Chin ,  Howard E. Grunes

    Inventor： Sasson R. Somekh ,  Marc O. Schweitzer ,  John C. Forster ,  Zheng Xu ,  Roderick C. Mosely ,  Barry L. Chin ,  Howard E. Grunes

    IPC: C23C14/35

    CPC classification number: C23C14/544 ,  C23C14/046 ,  C23C14/165 ,  C23C14/5833 ,  C23C14/5873 ,  G01N21/68 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76814 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window. Although deposition material may be deposited onto portions of the folded radiation path, in many applications, the deposition material will be sufficiently reflective to permit the emission spectra to be detected by a spectrometer or other suitable detector without significant signal loss. The etching or resputtering may be terminated when the detector detects that an underlying layer has been reached or when some other suitable process point has been reached.

    Abstract translation: 可以在溅射反应器系统中控制包括不透明金属导体材料的溅射材料层的等离子体蚀刻或再溅射。 在一个实施例中，溅射沉积层的溅射在材料溅射沉积之后进行，并且另外的材料被溅射沉积到衬底上。 位于系统的腔室内的路径将等离子体发射的光或其他辐射引导到腔室窗口或其他光学视图端口，其被屏蔽物保护以防止被导体材料沉积。 在一个实施例中，辐射路径被折叠以将等离子体光围绕室屏蔽件并且通过窗口反射到位于室窗口外部的检测器。 虽然沉积材料可以沉积在折叠辐射路径的部分上，但是在许多应用中，沉积材料将被充分反射，以允许发射光谱由光谱仪或其它合适的检测器检测，而没有显着的信号损失。 当检测器检测到已经到达下层或者当达到某些其它合适的处理点时，蚀刻或再溅射可以被终止。

    Buffer station for wafer backside cleaning and inspection
    9.
    发明授权
    Buffer station for wafer backside cleaning and inspection 失效
    用于晶片背面清洁和检查的缓冲站

    公开(公告)号：US06900135B2

    公开(公告)日：2005-05-31

    申请号：US10330810

    申请日：2002-12-27

    Applicant: Sasson R. Somekh ,  Yoram Uziel ,  Raphy Adout

    Inventor： Sasson R. Somekh ,  Yoram Uziel ,  Raphy Adout

    IPC: H01L21/00 ,  H01L21/302 ,  H01L21/461

    CPC classification number: H01L21/67253 ,  H01L21/67051

    Abstract: A wafer processing station includes an air gap chuck and a light emitter/collector assembly configured to gather light when scattered or reflected by contaminants on the wafer. The light emitter/collector assembly is driven by an actuator so that it passes across a backside surface of a wafer when supported within the chuck during wafer inspection. The wafer processing station may also include a cleaning module configured to clean the backside surface of the wafer when contaminants are discovered during wafer inspection. A computer system may be coupled to receive one or more signals from the light emitter/collector assembly that are indicative of contaminants on the backside surface of the wafer and to provide one or more control signals to the cleaning module in accordance therewith. The cleaning module may be used independently of the light emitter/collector assembly and vice-versa.

    Abstract translation: 晶片处理站包括气隙卡盘和发光体/集电器组件，其配置成当散射或在晶片上被污染物反射时收集光。 光发射器/集电器组件由致动器驱动，使得当在晶片检查期间支撑在卡盘内时，其穿过晶片的背面。 晶片处理站还可以包括清洁模块，该清洁模块被配置为当在晶片检查期间发现污染物时清洁晶片的背面。 计算机系统可以被耦合以从光发射器/收集器组件接收指示晶片的背面上的污染物的一个或多个信号，并根据其提供一个或多个控制信号给清洁模块。 清洁模块可以独立于光发射器/收集器组件使用，反之亦然。

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