公开(公告)号：US09337234B2

公开(公告)日：2016-05-10

申请号：US14349414

申请日：2012-10-05

Applicant: Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Kazunari Kimino

Inventor： Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Kazunari Kimino

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/378 ,  H01L27/144

CPC classification number: H01L27/14681 ,  H01L27/1443 ,  H01L27/14609 ,  H01L27/14656 ,  H04N5/3745 ,  H04N5/378

Abstract: A photoelectric converter includes a first pn junction comprised of at least two semiconductor regions of different conductivity types, and a first field-effect transistor including a first source connected with one of the semiconductor regions, a first drain, a first insulated gate and a same conductivity type channel as that of the one of the semiconductor regions. The first drain is supplied with a second potential at which the first pn junction becomes zero-biased or reverse-biased relative to a potential of the other of the semiconductor regions. When the first source turns to a first potential and the one of the semiconductor regions becomes zero-biased or reverse-biased relative to the other semiconductor regions, the first pn junction is controlled not to be biased by a deep forward voltage by supplying a first gate potential to the first insulated gate, even when either of the semiconductor regions is exposed to light.

Abstract translation: 光电转换器包括由至少两个不同导电类型的半导体区组成的第一pn结，以及包括与半导体区之一连接的第一源的第一场效应晶体管，第一漏极，第一绝缘栅极和 导电型沟道，与半导体区域中的一个相同。 第一漏极被提供有第二电位，在该第二电位处，第一pn结相对于另一个半导体区域的电位变为零偏置或反向偏置。 当第一源极变为第一电位并且半导体区域中的一个相对于其它半导体区域变为零偏置或反向偏置时，通过提供第一源极的第一电位，第一pn结被控制为不被深的正向电压偏置， 即使当半导体区域中的任一个暴露于光时，第一绝缘栅极的栅极电位。

公开(公告)号：US20150264280A1

公开(公告)日：2015-09-17

申请号：US14641683

申请日：2015-03-09

Applicant: Kazuhiro YONEDA ,  Hirofumi WATANABE ,  Takaaki NEGORO ,  Katsuhiko AISU ,  Yasukazu NAKATANI ,  Katsuyuki SAKURANO

Inventor： Kazuhiro YONEDA ,  Hirofumi WATANABE ,  Takaaki NEGORO ,  Katsuhiko AISU ,  Yasukazu NAKATANI ,  Katsuyuki SAKURANO

IPC: H04N5/355 ,  H04N5/378 ,  H04N5/374

CPC classification number: H04N5/374 ,  H04N5/35527

Abstract: An imaging device includes a photoelectric conversion element which photoelectrically converts incident light and generates a charge, accumulates and amplifies the charge, and outputs a photocurrent, wherein a level of an output signal when a charge which is accumulated in the photoelectric conversion element is outputted over a saturated amount of accumulable charge includes a level of an output signal of a charge of a photocurrent of DC component which is generated in the photoelectric conversion element and outputted during a readout time when the charge which is accumulated in the photoelectric conversion element is outputted.

Abstract translation: 一种成像装置包括光电转换入射光并产生电荷，累积和放大电荷并输出光电流的光电转换元件，其中当在光电转换元件中累积的电荷被输出时输出信号的电平 饱和量的可累加电荷包括在输出光电转换元件中蓄积的电荷时在光电转换元件中产生并输出的读出时间输出的DC分量的光电流的电荷的输出信号的电平。

公开(公告)号：US07755337B2

公开(公告)日：2010-07-13

申请号：US11978601

申请日：2007-10-30

Applicant: Takaaki Negoro

Inventor： Takaaki Negoro

IPC: G05F1/573

CPC classification number: G05F1/565 ,  G01R19/0092

Abstract: A current sensing circuit for sensing an output current generated by a voltage regulator includes a first double-diffused metal-oxide semiconductor transistor and a current-voltage converter. The first double-diffused metal-oxide semiconductor transistor has a first gate terminal to receive an output control signal from a control circuit of the voltage regulator. The first double-diffused metal-oxide semiconductor transistor is configured to output a current proportional to the output current according to the output control signal. The current-voltage converter is connected to the first double-diffused metal-oxide semiconductor transistor. The current-voltage converter is configured to convert the proportional current to a corresponding voltage.

Abstract translation: 用于感测由调压器产生的输出电流的电流感测电路包括第一双扩散金属氧化物半导体晶体管和电流 - 电压转换器。 第一双扩散金属氧化物半导体晶体管具有第一栅极端子，用于从电压调节器的控制电路接收输出控制信号。 第一双扩散金属氧化物半导体晶体管被配置为根据输出控制信号输出与输出电流成比例的电流。 电流 - 电压转换器连接到第一双扩散金属氧化物半导体晶体管。 电流 - 电压转换器被配置为将比例电流转换成相应的电压。

公开(公告)号：US20070188216A1

公开(公告)日：2007-08-16

申请号：US11703734

申请日：2007-02-08

Applicant: Takaaki Negoro

Inventor： Takaaki Negoro

IPC: H03K17/00

CPC classification number: G05F3/10 ,  G05F3/30

Abstract: A constant current circuit includes first and second depression type MOS transistors having drains connected to a high electric potential side; and first, second, and third enhanced type MOS transistors having sources connected to a low electric potential side.

Abstract translation: 恒流电路包括具有连接到高电位侧的漏极的第一和第二凹陷型MOS晶体管; 以及具有连接到低电位侧的源极的第一，第二和第三增强型MOS晶体管。

公开(公告)号：US09762822B2

公开(公告)日：2017-09-12

申请号：US14463743

申请日：2014-08-20

Applicant: Takaaki Negoro ,  Hirofumi Watanabe ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

Inventor： Takaaki Negoro ,  Hirofumi Watanabe ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

IPC: H04N5/355 ,  H01L27/146 ,  H04N5/3745 ,  H04N5/378 ,  H01L27/148 ,  H04N5/77 ,  H04N5/374 ,  H04N5/907

CPC classification number: H04N5/3559 ,  H01L27/14612 ,  H01L27/14638 ,  H01L27/14681 ,  H01L27/148 ,  H04N5/35509 ,  H04N5/3745 ,  H04N5/37457 ,  H04N5/378 ,  H04N5/772 ,  H04N5/907

Abstract: An imaging device includes at least one pixel having a phototransistor which converts light energy into signal charge and varies an amplification factor relative to the intensity of the received light energy, wherein the signal charge of the phototransistor is read out while receiving the light energy with the phototransistor for each pixel.

公开(公告)号：US20170006246A1

公开(公告)日：2017-01-05

申请号：US15187957

申请日：2016-06-21

Applicant: Katsuhiko AISU ,  Yasukazu NAKATANI ,  Kazuhiro YONEDA ,  Takaaki NEGORO ,  Yoshinori UEDA ,  Katsuyuki SAKURANO

Inventor： Katsuhiko AISU ,  Yasukazu NAKATANI ,  Kazuhiro YONEDA ,  Takaaki NEGORO ,  Yoshinori UEDA ,  Katsuyuki SAKURANO

IPC: H04N5/378 ,  H04N5/225 ,  H01L27/146

CPC classification number: H04N5/378 ,  H01L27/14601 ,  H01L31/1105 ,  H04N5/2253 ,  H04N5/363 ,  H04N5/374

Abstract: A photoelectric conversion device includes a photoelectric conversion unit which includes a phototransistor having a collector region, an emitter region, and a base region to generate an output current according to an intensity of incident light to the phototransistor, and a base potential setting unit which is configured to set up a base potential of the phototransistor so that the output current from the photoelectric conversion unit is equal to a predetermined current value.

Abstract translation: 光电转换装置包括光电转换单元，该光电转换单元包括具有集电极区域，发射极区域和基极区域的光电晶体管，以根据入射到该光电晶体管的入射光强度来产生输出电流;以及基极电位设定单元， 被配置为设置光电晶体管的基极电位，使得来自光电转换单元的输出电流等于预定电流值。

公开(公告)号：US09472706B2

公开(公告)日：2016-10-18

申请号：US14560037

申请日：2014-12-04

Applicant: Katsuyuki Sakurano ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Yasukazu Nakatani ,  Hirofumi Watanabe

Inventor： Katsuyuki Sakurano ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Yasukazu Nakatani ,  Hirofumi Watanabe

IPC: H01L31/113 ,  H01L27/146

CPC classification number: H01L31/1136 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14689

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.

Abstract translation: 公开了半导体器件和制造半导体器件的方法。 该方法包括在彼此相邻的光电转换元件之间的位置处形成在具有布置在半导体器件上的多个光电转换元件的半导体衬底的垂直方向上形成沟槽，形成第一导电材料层 并且在沟槽的内壁上形成氧化膜之后，通过将第一导电材料注入到沟槽中并在沟槽之上形成第一导体，通过除去除第一导电材料的第一导电部分之外的第一导电材料层 层，并且在第一导体上形成上栅电极，上栅电极被配置为与第一导体导电。 半导体器件包括半导体衬底，图像传感器，沟槽，第一导体和上部栅电极。

公开(公告)号：US20160247847A1

公开(公告)日：2016-08-25

申请号：US15019451

申请日：2016-02-09

Applicant: Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Takaaki Negoro ,  Katsuyuki Sakurano ,  Hirofumi Watanabe

Inventor： Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Takaaki Negoro ,  Katsuyuki Sakurano ,  Hirofumi Watanabe

IPC: H01L27/146

CPC classification number: H01L27/14683 ,  H01L27/1463 ,  H01L27/14681

Abstract: A semiconductor device includes a semiconductor layer, an electrode embedded from a surface of the semiconductor layer to an inside of the semiconductor layer and insulated by an insulation layer, and a structure in which a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type are formed in this order from the surface of the semiconductor layer along the electrode via the insulation layer. The electrode is arranged at a position where no inversion layer is formed by a voltage supplied to the electrode in at least one of an interface of the first semiconductor region and the second semiconductor region and an interface of the second semiconductor region and the third semiconductor region.

Abstract translation: 半导体器件包括半导体层，从半导体层的表面到半导体层的内部并被绝缘层绝缘的电极，以及其中第一导电类型的第一半导体区域，第二半导体 第二导电类型的区域和第一导电类型的第三半导体区域从半导体层的沿着电极的表面经由绝缘层依次形成。 在第一半导体区域和第二半导体区域的界面中的至少一个以及第二半导体区域和第三半导体区域的界面中的至少一个中，电极被配置在没有形成反转层的位置， 。

公开(公告)号：US20160133763A1

公开(公告)日：2016-05-12

申请号：US14935973

申请日：2015-11-09

Applicant: Takaaki Negoro ,  Yoshinori Ueda ,  Katsuyuki Sakurano ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuhiko Aisu

Inventor： Takaaki Negoro ,  Yoshinori Ueda ,  Katsuyuki Sakurano ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuhiko Aisu

IPC: H01L31/0224 ,  H04N5/378 ,  H04N5/361 ,  H01L31/18 ,  H01L31/0352

CPC classification number: H01L27/14681 ,  H01L27/14612

Abstract: A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of the first conductivity type, formed sequentially in a depth direction from a side of a front face of the semiconductor substrate; and a fourth semiconductor region of the second conductivity type contacting the insulation film and the second semiconductor region. An impurity concentration of the fourth semiconductor region is greater than an impurity concentration of the second semiconductor region.

Abstract translation: 将入射光转换为电流的半导体器件包括半导体衬底; 嵌入在半导体衬底中的电极; 与半导体衬底中的电极接触的绝缘膜; 第一导电类型的第一半导体区域，第二导电类型的第二半导体区域和第一导电类型的第三半导体区域沿着从半导体衬底的正面侧的深度方向依次形成; 以及与绝缘膜和第二半导体区域接触的第二导电类型的第四半导体区域。 第四半导体区域的杂质浓度大于第二半导体区域的杂质浓度。

公开(公告)号：US20160126271A1

公开(公告)日：2016-05-05

申请号：US14847567

申请日：2015-09-08

Applicant: Katsuyuki Sakurano ,  Takaaki Negoro ,  Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Hirofumi Watanabe

Inventor： Katsuyuki Sakurano ,  Takaaki Negoro ,  Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Hirofumi Watanabe

IPC: H01L27/146 ,  H01L29/868 ,  H01L29/866

CPC classification number: H01L29/868 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643 ,  H01L29/866

Abstract: A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.

Abstract translation: 提供一种固态图像感测装置，包括：第一导电性的第一半导体层，设置在第一半导电层上的第一导电性的第二半导体层，与第一导电性不同的第二导电性半导体区域 在第二半导电层中，深沟槽被配置为将多个相邻像素彼此隔离，以及注入到深沟槽中的电极，其中第二导电层的半导体区域，第二半导体层和第一半导体层 半导体层从近侧到远侧按顺序设置，第二半导体层被深沟槽分成与像素对应的部分，第一半导电层的第一导电性的杂质浓度 层比第二半导体层的第一导电性的杂质浓度高，并且深沟槽接触第一半导体层 制作层。