摘要:
A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n+-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.
摘要:
For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.
摘要:
Memory cells are disposed in plural array form. Select gate electrodes of the memory cells arranged in an X direction are connected to one another by select gate lines respectively. Memory gate electrodes are connected by memory gate lines respectively. The memory gate lines respectively connected to the memory gate electrodes of the memory cells adjacent to one another through source regions interposed therebetween are not electrically connected to one another. Each of the select gate lines has a first portion that extends in the X direction, and a second portion 9b of which one end is connected to the first portion and extends in a Y direction. The memory gate line is formed on its corresponding sidewall of the select gate line with an insulating film interposed therebetween. The memory gate line has a contact section that extends in the X direction from over a second portion of the select gate line to over an element isolation region, and is connected to its corresponding wiring through a plug that buries a contact hole formed over the contact section.
摘要:
Memory cells are disposed in plural array form. Select gate electrodes of the memory cells arranged in an X direction are connected to one another by select gate lines respectively. Memory gate electrodes are connected by memory gate lines respectively. The memory gate lines respectively connected to the memory gate electrodes of the memory cells adjacent to one another through source regions interposed therebetween are not electrically connected to one another. Each of the select gate lines has a first portion that extends in the X direction, and a second portion 9b of which one end is connected to the first portion and extends in a Y direction. The memory gate line is formed on its corresponding sidewall of the select gate line with an insulating film interposed therebetween. The memory gate line has a contact section that extends in the X direction from over a second portion of the select gate line to over an element isolation region, and is connected to its corresponding wiring through a plug that buries a contact hole formed over the contact section.
摘要:
A computer-assisted holographic-display apparatus comprises a diffraction image generator which receives an input image signal representing an object and computes corresponding diffraction pattern with a first sampling density. An interpolation processor is connected to the diffraction image generator via an intermediate page memory. The interpolation processor subjects the diffraction pattern to the interpolation process to create an interpolated diffraction pattern with an increased second sampling density. An interference pattern generator is connected to the interpolation processor to compute an interference caused pattern between the interpolated diffraction pattern and a reference wave by converting amplitude and phase distributions of the input image signal into the intensity distribution. The interference pattern is displayed on a previously selected displaying device.
摘要:
A sorter includes a sheet processing device, a plurality of bin trays arranged in a vertical direction, each bin tray having a specified width and length and adapted for bearing a sheet, shifting means for shifting the plurality of bin trays in the vertical direction, and moving means for moving the bin tray in a predetermined position in a lengthwise direction of the bin tray so that the sheet on the bin tray is processed by the sheet processing device. The bin tray can be moved to a position where sheet processing is to be applied by the sheet processing device.
摘要:
A picture printing apparatus is disclosed which includes a picture type judgement means, and a best mode printing system is determined according to the judging result. A mixed mode picture including a binary picture element and a gradational picture element is printed to utilize selectively the binary method, multivalence concentration pattern method and the dither method.
摘要:
A color image printing apparatus prints one pixel by superposing a predetermined dots of three colors within a 3.times.3 dot matrix in accordance with a density of the pixel. The positions of the printed dots within the dot matrix are stored as a dot pattern for each color. One dot pattern is used for each of a plurality of densities included in one density range. The printing energy for each of the dots included in the dot pattern is controlled in accordance with the density level of the pixel. The dot pattern is different for each color and three dot patterns are stored for each color and for each density range. These three dot patterns are repeatedly used for every three pixels which are continuous in the horizontal direction. These three dot patterns have two or three texture directions. The texture direction other than the vertical direction is different for each color.
摘要:
The toner concentration of a two-component type developer including a mixture of a magnetic carrier and an electroscopic toner is adjusted by bringing a magnetic brush of the two-component type developer into sliding contact with a mesh screen to move the electroscopic toner toward the magnetic brush side or the opposite side through apertures of the mesh screen. Apparatus for adjusting the toner concentration in a two-component type developer includes a mechanism for forming a magnetic brush from a mixture of a magnetic carrier and an electroscopic toner and for delivering the magnetic brush. The mechanism includes a support formed of an electroconductive non-magnetic material and a magnet having a plurality of poles and being built in the interior of the support. At least one of the support and magnet is movable. A mesh screen is formed of an electroconductive material and is arranged to support the electroscopic toner on the upper surface side thereof and to have sliding contact with the magnetic brush on the lower surface side thereof. A bias voltage applying mechanism is provided for applying a bias voltage between the support and mesh screen.
摘要:
In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode.