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    Method for manufacturing ferroelectric capacitor
    4.
    发明授权
    Method for manufacturing ferroelectric capacitor 失效
    铁电电容器的制造方法

    公开(公告)号：US5913117A

    公开(公告)日：1999-06-15

    申请号：US618370

    申请日：1996-03-19

    Applicant: Wan-in Lee

    Inventor： Wan-in Lee

    IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108

    CPC classification number: H01L28/56 ,  H01L21/02 ,  H01L28/60

    Abstract: This invention is related to the manufacturing method of ferroelectric capacitor, which can be applied to the memory cell of FRAM (Ferroelectric Random Access Memory). Fabrication of ferroelectric capacitor comprising the steps of: coating a first PZT sol-gel solution on a RuO.sub.X electrode to form a first PZT layer; baking the first PZT layer; annealing the first PZT layer to produce a seed layer with a perovskite structure; coating a second PZT sol-gel solution on the seed layer to form a second PZT layer; baking the second PZT layer; and annealing the second PZT layer to form a PZT film with a perovskite structure. The ferroelectric capacitor not only has a lower leakage current level and a higher degree of remanent polarization than the conventional capacitor, but also has almost the same leakage current level as an existing Pt/PZT/Pt capacitor.

    Abstract translation: 本发明涉及可应用于FRAM（铁电随机存取存储器）的存储单元的铁电电容器的制造方法。 铁电电容器的制造包括以下步骤：在RuOX电极上涂覆第一PZT溶胶 - 凝胶溶液以形成第一PZT层; 烘烤第一个PZT层; 退火第一PZT层以产生具有钙钛矿结构的种子层; 在种子层上涂覆第二PZT溶胶 - 凝胶溶液以形成第二PZT层; 烘烤第二PZT层; 并退火第二PZT层以形成具有钙钛矿结构的PZT膜。 铁电电容器不仅具有比常规电容器更低的漏电流水平和更高的剩余极化程度，而且与现有的Pt / PZT / Pt电容器具有几乎相同的漏电流水平。

    Organometallic zirconium precursor, in-situ synthesis thereof, lead-titanium based thin film using the same, and preparation method therefor
    5.
    发明授权
    Organometallic zirconium precursor, in-situ synthesis thereof, lead-titanium based thin film using the same, and preparation method therefor 失效
    有机金属锆前体，其原位合成，使用其的铅钛基薄膜及其制备方法

    公开(公告)号：US5688979A

    公开(公告)日：1997-11-18

    申请号：US726761

    申请日：1996-10-10

    Applicant: Wan-in Lee ,  Jun-ki Lee

    Inventor： Wan-in Lee ,  Jun-ki Lee

    IPC: H01G4/33 ,  C23C16/40 ,  H01B3/12 ,  C07F7/00 ,  C04B35/46

    CPC classification number: C23C16/409

    Abstract: An organometallic zirconium precursor, represented by following formula: L.sub.x .multidot.Zr(THD).sub.4 �I! wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R.dbd.H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.3 to 1.5 with the proviso that L is NR.sub.3 or in the range of 0.5 to 2 with the proviso that L is Cl.sub.2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Zr at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point. Lead-zirconium-titanium thin films prepared from the precursor, display superior reproducibility and reliability.

    Abstract translation: 由下式表示的有机金属锆前体：LxxZr（THD）4 [I]其中L是选自NR3（R = H，CH3）和Cl2气体的电子供体配体; THD表示2,2'，6,6'-四甲基-3,5-庚二酮; 并且x为0.3至1.5的范围，条件是L为NR 3或0.5至2的范围，条件是L为Cl 2，通过使气相电子给体流入含有双（2， 2'，6,6'-四甲基-3,5-庚二酮）Zr在预定温度下，原位合成加合物。 该前体在挥发性方面表现出显着的改善，并且在蒸发点处具有稳定性。 由前体制备的铅锆钛薄膜显示出优异的重现性和可靠性。

    Electrochromic device and method of manufacturing the same
    6.
    发明授权
    Electrochromic device and method of manufacturing the same 有权
    电致变色装置及其制造方法

    公开(公告)号：US08441708B2

    公开(公告)日：2013-05-14

    申请号：US12827204

    申请日：2010-06-30

    Applicant: Seog-Jin Jeon ,  Chang-Ho Noh ,  Wan-In Lee

    Inventor： Seog-Jin Jeon ,  Chang-Ho Noh ,  Wan-In Lee

    IPC: G02F1/153

    CPC classification number: G02F1/155 ,  G02F2202/36

    Abstract: An electrochromic device includes a first electrode, a second electrode disposed opposite the first electrode, a porous electrochromic layer disposed on the first electrode or the second electrode, and an electrolyte disposed between the first electrode and the second electrode. The porous electrochromic layer includes different sized nanoparticle clusters, and each nanoparticle cluster includes a plurality of nanoparticles and an electrochromic material.

    Abstract translation: 电致变色装置包括第一电极，与第一电极相对设置的第二电极，设置在第一电极或第二电极上的多孔电致变色层，以及设置在第一电极和第二电极之间的电解质。 多孔电致变色层包括不同尺寸的纳米颗粒簇，并且每个纳米颗粒簇包括多个纳米颗粒和电致变色材料。

    ELECTROCHROMIC DEVICE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    ELECTROCHROMIC DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    电致发光器件及其制造方法

    公开(公告)号：US20110043886A1

    公开(公告)日：2011-02-24

    申请号：US12827204

    申请日：2010-06-30

    Applicant: Seog-Jin JEON ,  Chang-Ho NOH ,  Wan-In LEE

    Inventor： Seog-Jin JEON ,  Chang-Ho NOH ,  Wan-In LEE

    IPC: G02F1/155 ,  B05D5/00 ,  C09K3/00

    CPC classification number: G02F1/155 ,  G02F2202/36

    Abstract: An electrochromic device includes a first electrode, a second electrode disposed opposite the first electrode, a porous electrochromic layer disposed on the first electrode or the second electrode, and an electrolyte disposed between the first electrode and the second electrode. The porous electrochromic layer includes different sized nanoparticle clusters, and each nanoparticle cluster includes a plurality of nanoparticles and an electrochromic material.

    Abstract translation: 电致变色装置包括第一电极，与第一电极相对设置的第二电极，设置在第一电极或第二电极上的多孔电致变色层，以及设置在第一电极和第二电极之间的电解质。 多孔电致变色层包括不同尺寸的纳米颗粒簇，并且每个纳米颗粒簇包括多个纳米颗粒和电致变色材料。

    Group IV metal precursors and a method of chemical vapor deposition using the same
    8.
    发明授权
    Group IV metal precursors and a method of chemical vapor deposition using the same 有权
    IV族金属前体和使用其的化学气相沉积方法

    公开(公告)号：US06689427B2

    公开(公告)日：2004-02-10

    申请号：US09933736

    申请日：2001-08-22

    Applicant: Yo Sep Min ,  Young Jin Cho ,  Dae Sig Kim ,  Ik Mo Lee ,  Sun Kwon Lim ,  Wan In Lee ,  Bo Hyun Choi

    Inventor： Yo Sep Min ,  Young Jin Cho ,  Dae Sig Kim ,  Ik Mo Lee ,  Sun Kwon Lim ,  Wan In Lee ,  Bo Hyun Choi

    IPC: C23C1600

    CPC classification number: C23C16/409 ,  C07C225/14

    Abstract: An organometallic precursor of a formula M(L)2 for use in formation of metal oxide thin films, in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of −2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1-8 alkyl group; and R3 is a linear or branched C1-8 alkylene group. Also disclosed is a chemical vapor deposition method wherein a metal oxide thin film is formed on a substrate using the organometallic precursor. The precursor exhibits excellent volatility, thermal property and hydrolytic stability and is particularly suitable for the deposition of a multi-component metal oxide thin film containing a group IV metal such as titanium.

    Abstract translation: 用于形成金属氧化物薄膜的式M（L）2的有机金属前体，其中M是电荷为+4的第IV族金属离子，L为带电荷的三齿配体， 配体由下式（I）表示：其中R 1和R 2各自独立地为直链或支链C 1-8烷基; 且R 3为直链或支链C 1-8亚烷基。 还公开了一种化学气相沉积方法，其中使用有机金属前体在基板上形成金属氧化物薄膜。 前体表现出优异的挥发性，热性质和水解稳定性，特别适用于沉积含有IV族金属如钛的多组分金属氧化物薄膜。

    PZT thin films for ferroelectric capacitor and method for preparing the same
    9.
    发明授权
    PZT thin films for ferroelectric capacitor and method for preparing the same 失效
    用于铁电电容器的PZT薄膜及其制备方法

    公开(公告)号：US5625529A

    公开(公告)日：1997-04-29

    申请号：US412043

    申请日：1995-03-28

    Applicant: Wan-in Lee ,  Jun-ki Lee ,  Il-sub Chung ,  Chi-won Chung ,  In-kyung Yoo

    Inventor： Wan-in Lee ,  Jun-ki Lee ,  Il-sub Chung ,  Chi-won Chung ,  In-kyung Yoo

    IPC: C04B35/46 ,  H01B3/00 ,  H01B3/12 ,  H01G4/12 ,  H01G7/06 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01G4/06

    CPC classification number: H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L28/55 ,  Y10T29/435

    Abstract: PZT ferroelectric thin films for capacitors comprise a combination of a donor dopant and an acceptor dopant in a total amount of about 0.1 to 8 mole percent of PZT, or Sc alone in an amount of about 0.1 to 5 mole percent. Nb or Ta is employed as a donor dopant, while Sc, Mg or Zn can be used as an acceptor dopant. The presence of a single Sc acceptor dopant, or both an acceptor dopant and a donor dopant, results in increased endurance. Fatigue cycles are increased on the order of about 10.sup.5 relative to dopant-free films. Doping with a single Sc acceptor dopant, or both an acceptor dopant and a donor dopant, reduces coercive field, allowing PZT films to switch at relatively low voltages. PZT thin films of a pure perovskite phase are obtained in which a pyrochlore phase is completely excluded. Pt may be used as an electrode material. The leakage current of PZT films doped with both the acceptor and donor elements are similar to the leakage current level of pure PZT thin films.

    Abstract translation: 用于电容器的PZT铁电薄膜包括总量为约0.1至8摩尔％的PZT或Sc单独的施主掺杂剂和受主掺杂剂的组合，其量为约0.1至5摩尔％。 Nb或Ta用作施主掺杂剂，而Sc，Mg或Zn可用作受主掺杂剂。 单个Sc受体掺杂剂或受体掺杂剂和施主掺杂剂两者的存在导致耐久性增加。 相对于不含掺杂剂的膜，疲劳循环增加约为约105。 用单个Sc受体掺杂剂或受体掺杂剂和施主掺杂剂掺杂减少矫顽场，允许PZT膜在相对低的电压下切换。 获得纯钙钛矿相的PZT薄膜，其中完全排除了烧绿石相。 Pt可以用作电极材料。 掺杂受体和施主元素的PZT膜的漏电流类似于纯PZT薄膜的漏电流水平。

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