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    Semiconductor integrated circuit device and a method for manufacturing a semiconductor integrated circuit device
    3.
    发明授权
    Semiconductor integrated circuit device and a method for manufacturing a semiconductor integrated circuit device 失效
    半导体集成电路装置及半导体集成电路装置的制造方法

    公开(公告)号：US08017464B2

    公开(公告)日：2011-09-13

    申请号：US12558498

    申请日：2009-09-12

    申请人： Masao Sugiyama ,  Yoshiyuki Kaneko ,  Yoshinori Kondo ,  Masayoshi Hirasawa

    发明人： Masao Sugiyama ,  Yoshiyuki Kaneko ,  Yoshinori Kondo ,  Masayoshi Hirasawa

    IPC分类号： H01L21/336 ,  H01L21/8234

    CPC分类号： H01L21/28518 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76819 ,  H01L23/485 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

    摘要： As a method for constituting a pre-metal interlayer insulating film, such method is considered as forming a CVD silicon oxide-based insulating film having good filling properties of a silicon oxide film by ozone TEOS, reflowing the film at high temperatures to planarize it, then stacking a silicon oxide film having good CMP scratch resistance by plasma TEOS, and, further, planarizing it by CMP. However, it was made clear that, in a process for forming a contact hole, crack in the pre-metal interlayer insulating film is exposed in the contact hole, into which barrier metal intrudes to cause short-circuit defects.In the present invention, in the pre-metal process, after forming the ozone TEOS film over an etch stop film, the ozone TEOS film is once etched back so as to expose the etch stop film over a gate structure, and, after that, a plasma TEOS film is formed over the remaining ozone TEOS film, and then the plasma TEOS film is planarized by CMP.

    摘要翻译： 作为构成前金属层间绝缘膜的方法，认为通过臭氧TEOS形成氧化硅膜的填充性良好的CVD硅氧化物类绝缘膜，在高温下回流以使其平坦化， 然后通过等离子体TEOS层叠具有良好CMP耐刮擦性的氧化硅膜，并且进一步通过CMP对其进行平坦化。 但是，在形成接触孔的工序中，在金属间绝缘膜的裂纹暴露在接触孔内，阻挡金属侵入其中而引起短路缺陷。 在本发明中，在预金属工艺中，在蚀刻停止膜上形成臭氧TEOS膜之后，臭氧TEOS膜被一次回蚀刻，以便在栅极结构上暴露蚀刻停止膜，之后， 在剩余的臭氧TEOS膜上形成等离子体TEOS膜，然后通过CMP平坦化等离子体TEOS膜。

    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    4.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
    半导体集成电路装置及制造半导体集成电路装置的方法

    公开(公告)号：US20100078690A1

    公开(公告)日：2010-04-01

    申请号：US12558498

    申请日：2009-09-12

    申请人： Masao SUGIYAMA ,  Yoshiyuki KANEKO ,  Yoshinori KONDO ,  Masayoshi HIRASAWA

    发明人： Masao SUGIYAMA ,  Yoshiyuki KANEKO ,  Yoshinori KONDO ,  Masayoshi HIRASAWA

    IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/768 ,  H01L23/48

    CPC分类号： H01L21/28518 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76819 ,  H01L23/485 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

    摘要： As a method for constituting a pre-metal interlayer insulating film, such method is considered as forming a CVD silicon oxide-based insulating film having good filling properties of a silicon oxide film by ozone TEOS, reflowing the film at high temperatures to planarize it, then stacking a silicon oxide film having good CMP scratch resistance by plasma TEOS, and, further, planarizing it by CMP. However, it was made clear that, in a process for forming a contact hole, crack in the pre-metal interlayer insulating film is exposed in the contact hole, into which barrier metal intrudes to cause short-circuit defects.In the present invention, in the pre-metal process, after forming the ozone TEOS film over an etch stop film, the ozone TEOS film is once etched back so as to expose the etch stop film over a gate structure, and, after that, a plasma TEOS film is formed over the remaining ozone TEOS film, and then the plasma TEOS film is planarized by CMP.

    摘要翻译： 作为构成前金属层间绝缘膜的方法，认为通过臭氧TEOS形成氧化硅膜的填充性良好的CVD硅氧化物类绝缘膜，在高温下回流以使其平坦化， 然后通过等离子体TEOS层叠具有良好CMP耐刮擦性的氧化硅膜，并且进一步通过CMP对其进行平坦化。 但是，在形成接触孔的工序中，在金属间绝缘膜的裂纹暴露在接触孔内，阻挡金属侵入其中而引起短路缺陷。 在本发明中，在预金属工艺中，在蚀刻停止膜上形成臭氧TEOS膜之后，臭氧TEOS膜被一次回蚀刻，以便在栅极结构上暴露蚀刻停止膜，之后， 在剩余的臭氧TEOS膜上形成等离子体TEOS膜，然后通过CMP平坦化等离子体TEOS膜。

    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    9.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
    半导体集成电路装置及制造半导体集成电路装置的方法

    公开(公告)号：US20120061769A1

    公开(公告)日：2012-03-15

    申请号：US13225548

    申请日：2011-09-05

    申请人： MASAO SUGIYAMA ,  Yoshiyuki Kaneko ,  Yoshinori Kondo ,  Masayoshi Hirasawa

    发明人： MASAO SUGIYAMA ,  Yoshiyuki Kaneko ,  Yoshinori Kondo ,  Masayoshi Hirasawa

    IPC分类号： H01L27/092

    CPC分类号： H01L21/28518 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76819 ,  H01L23/485 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

    摘要： For constituting a pre-metal interlayer insulating film, such a method is considered as forming a CVD silicon oxide-based insulating film having good filling properties by ozone TEOS, reflowing the film to planarize it, stacking a silicon oxide film having good CMP scratch resistance by plasma TEOS, and further planarizing by CMP. However, in forming a contact hole, crack in the pre-metal interlayer insulating film is exposed in the contact hole, into which barrier metal intrudes to cause short-circuit defects. In the present invention, in the pre-metal process, after forming the ozone TEOS film over an etch stop film, the ozone TEOS film is once etched back so as to expose the etch stop film over a gate structure, a plasma TEOS film is formed over the remaining ozone TEOS film, and the plasma TEOS film is planarized by CMP.

    摘要翻译： 为了构成前金属层间绝缘膜，将这种方法考虑为通过臭氧TEOS形成具有良好填充性能的CVD氧化硅系绝缘膜，回流膜使其平坦化，层叠具有良好CMP耐刮擦性的氧化硅膜 通过等离子体TEOS，并通过CMP进一步平坦化。 然而，在形成接触孔时，金属间绝缘膜中的裂纹暴露在阻挡金属侵入的接触孔中，导致短路缺陷。 在本发明中，在预金属工艺中，在蚀刻停止膜上形成臭氧TEOS膜之后，臭氧TEOS膜被一次回蚀刻，以便在栅极结构上暴露蚀刻停止膜，等离子体TEOS膜为 形成在剩余的臭氧TEOS膜上，并且等离子体TEOS膜通过CMP平坦化。

    TOOTH-BLEACHING MATERIAL AND METHOD OF BLEACHING TOOTH
    10.
    发明申请
    TOOTH-BLEACHING MATERIAL AND METHOD OF BLEACHING TOOTH 审中-公开
    牙齿漂白材料和漂白牙齿的方法

    公开(公告)号：US20100092407A1

    公开(公告)日：2010-04-15

    申请号：US12530975

    申请日：2008-02-21

    申请人： Hiroshi Kurata ,  Yuki Kumagai ,  Kenichi Kimiduka ,  Yoshinori Kondo ,  Yasunari Kawabata

    发明人： Hiroshi Kurata ,  Yuki Kumagai ,  Kenichi Kimiduka ,  Yoshinori Kondo ,  Yasunari Kawabata

    IPC分类号： A61K8/22 ,  A61Q11/00

    CPC分类号： A61Q11/00 ,  A61K8/362 ,  A61K8/4973 ,  A61K8/498

    摘要： A tooth bleaching material that is safe and has good operability and high bleaching effect and a tooth bleaching method using the tooth bleaching material are provided by bleaching and removing colored sediments (colored or discolored deposits) on a tooth with a tooth bleaching material containing hydrogen peroxide and/or a compound generating hydrogen peroxide in an aqueous solution, and a dicarboxylic anhydride, and also containing a basic compound and a thickening agent, and a tooth bleaching method containing attaching the tooth bleaching material to a surface of a discolored tooth after dilution or without dilution irradiating with light.

    摘要翻译： 通过使用含有过氧化氢的牙齿漂白材料在牙齿上漂白除去有色沉淀物（着色或变色沉积物），提供安全且具有良好可操作性和高漂白效果的牙齿漂白剂和使用牙齿漂白材料的牙齿漂白方法 和/或在水溶液中产生过氧化氢的化合物和二羧酸酐，并且还含有碱性化合物和增稠剂，以及牙齿漂白方法，其将稀释后的牙齿漂白材料附着到变色牙齿的表面，或 无稀释照射光。