Abstract:
Embodiments of a radio frequency (RF) receiver implementing one or more forms of protection to protect devices of the RF receiver from in-band interferers is provided. The RF receiver includes an integrated circuit terminal configured to couple a RF signal received at an antenna to a RF signal path, and a low noise amplifier (LNA) coupled to the RF signal path and configured to amplify the RF signal to provide an amplified RF signal. To protect the LNA from in-band interferers, the RF receiver can further include one or more clamping circuits and/or an over-voltage detector to determine if a peak of the RF signal exceeds an acceptable level.
Abstract:
Aspects of a method and system for an integrated LC resonant current gain boosting amplifier may include amplifying within a chip, via an on-chip LC current gain circuit, an alternating current (AC) generated by an on-chip voltage-to-current converter, and converting within the chip, via an on-chip current-to-voltage circuit; the amplified alternating current to an output voltage. The on-chip LC current gain circuit comprises only passive components, which may include one or more resistors, one or more capacitors, and one or more inductors.
Abstract:
Embodiments of a radio frequency (RF) receiver implementing one or more forms of protection to protect devices of the RF receiver from in-band interferers is provided. The RF receiver includes an integrated circuit terminal configured to couple a RF signal received at an antenna to a RF signal path, and a low noise amplifier (LNA) coupled to the RF signal path and configured to amplify the RF signal to provide an amplified RF signal. To protect the LNA from in-band interferers, the RF receiver can further include one or more clamping circuits and/or an over-voltage detector to determine if a peak of the RF signal exceeds an acceptable level.
Abstract:
Embodiments of a SAW-less RF receiver front-end that includes a frequency translated notch filter (FTNF) are presented. An FTNF includes a passive mixer and a baseband impedance. The baseband impedance includes capacitors that form a low-Q band-stop filter. The passive mixer is configured to translate the baseband impedance to a higher frequency. The translated baseband impedance forms a high-Q notch filter and is presented at the input of the FTNF. The FTNF can be fully integrated in CMOS IC technology (or others, e.g., Bipolar, BiCMOS, and SiGe) and applied in wireless receiver systems including GSM, EDGE, Wideband Code Division Multiple Access (WCDMA), Bluetooth, and wireless LANs (e.g., IEEE 802.11). In addition, embodiments of an apparatus to protect SAW-less RF receiver front-ends are presented.
Abstract:
Aspects of a method and system for a low power fully differential noise canceling low noise amplifier (NC LNA) are provided. The NC LNA may receive signals via a single ended input and may generate an amplified symmetric differential output from the received signals. The NC LNA may utilize capacitor dividers, such as a capacitor bank, in the single ended input in order to provide impedance transformation that enables low power operation and matching to an input port. The NC LNA may generate one portion of the amplified symmetric differential output via a voltage divider, which may comprise a plurality of capacitors, such as a capacitor bank. The NC LNA may be implemented utilizing one or more circuits.
Abstract:
Radio frequency amplifier with constant gain setting. A circuitry that includes triple well connected MOSFETs is employed to eliminate body effects therein. The voltage gain as presented herein, being implemented using a ratio of certain elements within the circuitry, is immune to variations in temperature, power supply voltage, and process variations. One implementation employs an array of selectable MOSFETs to allow for more than one gain setting to be provided by the amplifier. Such an amplifier has a variable/selectable gain setting. An appropriately placed MOSFET is employed to provide the desired input impedance (e.g., 50Ω). This design can be implemented using multiple n-channel metal oxide semiconductor field-effect transistors (N-MOSFETs) (some of which are triple well connected) and p-channel metal oxide semiconductor field-effect transistors (P-MOSFETs), or alternatively using P-MOSFETs and N-MOSFETs.
Abstract:
Low flicker noise mixer and buffer. This design employs some native metal oxide semiconductor field-effect transistors (MOSFETs) (e.g., having no threshold voltage) within a passive mixer whose gates are driven using clock signals. These native MOSFETs maybe biased at one half of the power supply voltage to provide a lower noise figure. A cooperatively operating buffer employs appropriately places MOSFETs and resistors to ensure the desired gain. Relatively larger valued resistors can be employed to provide for higher voltage gain, and this can sometimes be accompanied with using a higher than typical power supply voltage. Source followers serve as output buffers and also ensure the required output DC voltage level as well. It is also noted that this design can be implemented using n-channel metal oxide semiconductor field-effect transistors (N-MOSFETs) of p-channel metal oxide semiconductor field-effect transistors (P-MOSFETs).
Abstract:
Aspects of a method and system for an integrated LC resonant current gain boosting amplifier may include amplifying within a chip, via an on-chip LC current gain circuit, an alternating current (AC) generated by an on-chip voltage-to-current converter, and converting within the chip, via an on-chip current-to-voltage circuit; the amplified alternating current to an output voltage. The on-chip LC current gain circuit comprises only passive components, which may include one or more resistors, one or more capacitors, and one or more inductors.
Abstract:
Aspects of a method and system for processing signals in a high performance receive chain may include amplifying a plurality of radio frequency signals in one or more respective one or ones of a plurality of amplifier chains in a multistandard radio frequency front-end, which may comprise one or more shared processing stages. The plurality of radio frequency signals may be compliant with a plurality of radio frequency communication standards and may be received concurrently. The one or more shared processing stages may be shared between two or more of the plurality of amplifier chains. Each of the two or more of the plurality of amplifier chains may be operable to amplify signals compliant with different radio frequency communication standards.
Abstract:
Embodiments of a radio frequency (RF) receiver implementing one or more forms of protection to protect devices of the RF receiver from in-band interferers is provided. The RF receiver includes an integrated circuit terminal configured to couple a RF signal received at an antenna to a RF signal path, and a low noise amplifier (LNA) coupled to the RF signal path and configured to amplify the RF signal to provide an amplified RF signal. To protect the LNA from in-band interferers, the RF receiver can further include one or more clamping circuits and/or an over-voltage detector to determine if a peak of the RF signal exceeds an acceptable level.