Methods of Continuously Wet Etching A Patterned Substrate
    2.
    发明申请
    Methods of Continuously Wet Etching A Patterned Substrate 有权
    连续湿蚀刻图案基板的方法

    公开(公告)号:US20140231381A1

    公开(公告)日:2014-08-21

    申请号:US14238781

    申请日:2012-09-19

    Abstract: Metalized web substrate is wet etched in a reaction vessel by contacting with oxidizing and metal complexing agent to remove metal from unpatterned region. Following etching, substrate is rinsed, and rinse is at least partly recycled. Concentrations of oxidizing and metal complexing agents in the etchant bath are maintained by delivering replenishment feeds of each. Concentration of metal in the etchant bath is maintained by discharging some of the etchant bath. Replenishment rates of oxidizing and metal complexing agents and etchant removal rate are determined based at least in part on rate that metal etched from the substrate enters the etchant bath.

    Abstract translation: 通过与氧化和金属络合剂接触来在反应容器中湿法蚀刻金属化网状基材以从未图案化的区域去除金属。 在蚀刻之后,将基底冲洗,冲洗至少部分回收。 腐蚀剂浴中的氧化剂和金属络合剂的浓度通过输送各种补充饲料来维持。 通过排出一些蚀刻剂浴来维持蚀刻液中的金属浓度。 至少部分地基于从基板蚀刻的金属进入蚀刻剂浴的速率来确定氧化和金属络合剂的补充速率和蚀刻剂去除速率。

Patent Agency Ranking