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    Integrated optical transceiver
    2.
    发明申请
    Integrated optical transceiver 有权

    公开(公告)号：US20230085957A1

    公开(公告)日：2023-03-23

    申请号：US17866618

    申请日：2022-07-18

    Applicant: Apple Inc.

    Inventor： Nicolas Hotellier ,  Arnaud Laflaquière ,  Christophe Verove ,  Fei Tan ,  Siddharth Joshi

    IPC: H01S5/026 ,  H01S5/042 ,  H01S5/02326 ,  H01S5/42

    Abstract: An optoelectronic device includes a base chip, including a silicon die having a photodiode disposed at its front surface and a first anode contact and a first cathode contact disposed on the front surface. A laser diode driver circuit on the silicon die supplies an electrical drive signal between the first anode contact and the first cathode contact. An emitter chip includes a III-V semiconductor die, which is mounted with its front side facing toward the front surface of the silicon die. A second anode contact and a second cathode contact are disposed on the front side of the III-V semiconductor die in electrical communication with the first anode contact and the first cathode contact. A VCSEL is disposed on the front side of the III-V semiconductor die in coaxial alignment with the photodiode and receives the drive signal from the second anode contact and the second cathode contact.

    Integrated device for optical time-of-flight measurement
    3.
    发明授权
    Integrated device for optical time-of-flight measurement 有权

    公开(公告)号：US11418006B1

    公开(公告)日：2022-08-16

    申请号：US16538860

    申请日：2019-08-13

    Applicant: Apple Inc.

    Inventor： Arnaud Laflaquière ,  Fei Tan ,  Keith Lyon

    IPC: H01S5/00 ,  H01S5/026 ,  H01S5/42 ,  H01S5/183 ,  H01S5/02 ,  H01S5/343 ,  H01S5/042 ,  G01S7/481 ,  G01S17/10

    Abstract: An optoelectronic device includes a semiconductor substrate and an optically-active structure, including epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack, a quantum well structure with P- and N-doped layers disposed respectively on opposing sides of the quantum well structure, and an upper DBR stack. Electrodes are coupled to apply a bias voltage between the P- and N-doped layers. Control circuitry, disposed on the substrate, is configured to apply a forward bias voltage between the electrodes so as to cause the optically-active structure to emit an optical pulse through the upper DBR stack, and then to reverse the bias voltage between the electrodes so as to cause the optically-active structure to output an electrical pulse to the control circuitry in response to incidence of one or more of the photons, due to reflection of the optical pulse, on the quantum well structure through the upper DBR stack.

    Laser-Integrated Balance Detection for Self-Mixing Interferometry
    6.
    发明申请
    Laser-Integrated Balance Detection for Self-Mixing Interferometry 有权

    公开(公告)号：US20220320820A1

    公开(公告)日：2022-10-06

    申请号：US17219744

    申请日：2021-03-31

    Applicant: Apple Inc.

    Inventor： Tong Chen ,  Fei Tan ,  Mingzhou Jin

    IPC: H01S5/026 ,  H01S5/125 ,  H01S5/183 ,  H01L31/0352 ,  H01S5/34

    Abstract: An optical sensor system includes a set of epitaxial layers formed on a semiconductor substrate. The set of epitaxial layers defines a semiconductor laser having a first multiple quantum well (MQW) structure. Electromagnetic radiation is generated by the first MQW structure, emitted from the first MQW structure, and self-mixed with a portion of the emitted electromagnetic radiation that is returned to the first MQW structure. The set of epitaxial layers also defines a second MQW structure operable to generate a first photocurrent responsive to detecting a first emission of the semiconductor laser, and a third MQW structure operable to generate a second photocurrent responsive to detecting a second emission of the semiconductor laser. The optical sensor system also includes a circuit configured to generate a self-mixing interferometry (SMI) signal by combining the first photocurrent and the second photocurrent.

    Hybrid Interferometric and Scatterometric Sensing Using In-Plane Sensors
    7.
    发明申请
    Hybrid Interferometric and Scatterometric Sensing Using In-Plane Sensors 有权

    公开(公告)号：US20220316856A1

    公开(公告)日：2022-10-06

    申请号：US17219779

    申请日：2021-03-31

    Applicant: Apple Inc.

    Inventor： Tong Chen ,  Fei Tan ,  Mingzhou Jin

    IPC: G01B9/02 ,  G01N21/47

    Abstract: An optical sensor system including a semiconductor substrate; a self-mixing interferometry (SMI) sensor formed on the semiconductor substrate and including a semiconductor laser having a resonant cavity; and an array of photodetectors formed on the semiconductor substrate. The SMI sensor is configured to generate an SMI signal responsive to a retro-reflection of electromagnetic radiation emitted by the semiconductor laser and received into the resonant cavity. The array of photodetectors is configured to generate a set of angular-resolved scatter signals responsive to a scatter of the electromagnetic radiation emitted by the semiconductor laser.

    Self-Mixing Interference Device for Sensing Applications
    9.
    发明申请
    Self-Mixing Interference Device for Sensing Applications 有权

    公开(公告)号：US20210003385A1

    公开(公告)日：2021-01-07

    申请号：US16913645

    申请日：2020-06-26

    Applicant: Apple Inc.

    Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chin Han Lin ,  Keith Lyon ,  Marc A. Drader ,  Weiping Li

    IPC: G01B9/02 ,  H01S5/026 ,  H01S5/30 ,  H01S5/183 ,  H01S5/343

    Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

    SELF-MIXING INTERFEROMETRY USING BACKSIDE-EMITTING VCSEL DIODE WITH INTEGRATED PHOTODETECTOR
    10.
    发明申请
    SELF-MIXING INTERFEROMETRY USING BACKSIDE-EMITTING VCSEL DIODE WITH INTEGRATED PHOTODETECTOR 有权

    公开(公告)号：US20250105594A1

    公开(公告)日：2025-03-27

    申请号：US18892108

    申请日：2024-09-20

    Applicant: Apple Inc.

    Inventor： Pengfei Qiao ,  Fei Tan ,  Tong Chen ,  Qinghong Du ,  Siddharth Joshi ,  Nicolas Hotellier ,  Alexander Hein ,  Pierre-Antoine Delean

    IPC: H01S5/183 ,  H01S5/026 ,  H01S5/042 ,  H01S5/30

    Abstract: Embodiments described herein include an optoelectronic sensing device having a vertical cavity surface emitting laser (VCSEL), a resonance cavity photodetector (RCPD), and a tunnel junction. The VCSEL is at least partly defined by a first set of semiconductor layers disposed on a substrate. The first set of semiconductor layers includes a first active region. The VCSEL is configured to emit laser light towards the substrate, upon application of a first bias voltage, and undergo self-mixing interference upon reception of reflections or backscatters thereof. The RCPD is vertically adjacent to the VCSEL and is at least partly defined by a second set of semiconductor layers disposed on the substrate. The second set of semiconductor layers includes a second active region. The RCPD is configured to detect, upon application of a second bias voltage, the self-mixing interference. The tunnel junction is disposed between the first active region and the second active region.

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