公开(公告)号：US11417534B2

公开(公告)日：2022-08-16

申请号：US16138507

申请日：2018-09-21

Applicant: Applied Materials, Inc.

Inventor： Ming Xia ,  Dongqing Yang ,  Ching-Mei Hsu

IPC: H01L21/311 ,  H01L21/67

Abstract: Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.

公开(公告)号：US11164724B2

公开(公告)日：2021-11-02

申请号：US16000469

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Sang Won Kang ,  Nicholas Celeste ,  Dmitry Lubomirsky ,  Peter Hillman ,  Douglas Brenton Hayden ,  Dongqing Yang

IPC: H01J37/32

Abstract: Embodiments of the present disclosure generally provide improved methods for processing substrates with improved process stability, increased mean wafers between clean, and/or improved within wafer uniformity. One embodiment provides a method for seasoning one or more chamber components in a process chamber. The method includes placing a dummy substrate in the process chamber, flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate, and annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.

公开(公告)号：US10964512B2

公开(公告)日：2021-03-30

申请号：US15942051

申请日：2018-03-30

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/67 ,  C23C16/00

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

公开(公告)号：US20210043448A1

公开(公告)日：2021-02-11

申请号：US17081256

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mihaela A. Balseanu ,  Li-Qun Xia ,  Dongqing Yang ,  Lala Zhu ,  Malcolm J. Bevan ,  Theresa Kramer Guarini ,  Wenbo Yan

IPC: H01L21/02 ,  H01L21/3105 ,  C23C16/458 ,  C23C16/455 ,  C23C16/04 ,  C23C16/02 ,  C23C16/56

Abstract: Processing platforms having a central transfer station with a robot and an environment having greater than or equal to about 0.1% by weight water vapor, a pre-clean chamber connected to a side of the transfer station and a batch processing chamber connected to a side of the transfer station. The processing platform configured to pre-clean a substrate to remove native oxides from a first surface, form a blocking layer using a alkylsilane and selectively deposit a film. Methods of using the processing platforms and processing a plurality of wafers are also described.

公开(公告)号：US10699921B2

公开(公告)日：2020-06-30

申请号：US16448323

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang

IPC: C23C16/455 ,  C23C16/34 ,  H01L21/02 ,  C23C16/458 ,  H01L21/285 ,  H01L21/67 ,  H01L21/311 ,  B01F5/00

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

公开(公告)号：US20190333786A1

公开(公告)日：2019-10-31

申请号：US16448323

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang

IPC: H01L21/67 ,  H01L21/311 ,  B01F5/00

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

公开(公告)号：US10008366B2

公开(公告)日：2018-06-26

申请号：US15259401

申请日：2016-09-08

Applicant: Applied Materials, Inc.

Inventor： Sang Won Kang ,  Nicholas Celeste ,  Dmitry Lubomirsky ,  Peter Hillman ,  Douglas Brenton Hayden ,  Dongqing Yang

IPC: H01L21/302 ,  H01L21/461 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32862

Abstract: Embodiments of the present disclosure generally provide improved methods for processing substrates with improved process stability, increased mean wafers between clean, and/or improved within wafer uniformity. One embodiment provides a method for seasoning one or more chamber components in a process chamber. The method includes placing a dummy substrate in the process chamber, flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate, and annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.

公开(公告)号：US20240087910A1

公开(公告)日：2024-03-14

申请号：US17944540

申请日：2022-09-14

Applicant: Applied Materials, Inc.

Inventor： Lala Zhu ,  Shi Che ,  Dongqing Yang ,  Nitin K. Ingle

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/324

Abstract: A semiconductor processing method may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include an exposed region of silicon-and-oxygen-containing material. The substrate may include an exposed region of a liner material. The methods may include providing a hydrogen-containing precursor to the semiconductor processing region. The methods may include contacting the substrate with the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include selectively removing at least a portion of the exposed silicon-and-oxygen-containing material.

公开(公告)号：US11276590B2

公开(公告)日：2022-03-15

申请号：US15597949

申请日：2017-05-17

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01L21/67 ,  H01L21/687 ,  H01J37/32

Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

公开(公告)号：US20200328098A1

公开(公告)日：2020-10-15

申请号：US16915749

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang

IPC: H01L21/67 ,  B01F5/00 ,  H01L21/311

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.