公开(公告)号：US20160243580A1

公开(公告)日：2016-08-25

申请号：US15147874

申请日：2016-05-05

Applicant: APPLIED MATERIALS, INC.

Inventor： JOSEPH M. RANISH ,  KAILASH PATALAY

IPC: B05C13/00 ,  C30B35/00 ,  C30B23/02

CPC classification number: B05C13/00 ,  C30B23/02 ,  C30B35/00 ,  H01L21/67115 ,  H01L21/68735

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit, the process kit comprising a first ring to support a substrate proximate a peripheral edge of the substrate; a second ring disposed about the first ring; and a path formed between the first and second rings that allows the first ring to rotate with respect to the second ring, wherein the path substantially prevents light from travelling between a first volume disposed below the first and second rings and a second volume disposed above the first and second rings.

公开(公告)号：US20140094039A1

公开(公告)日：2014-04-03

申请号：US13630291

申请日：2012-09-28

Applicant: Applied Materials, Inc.

Inventor： JOSEPH M. RANISH ,  Wolfgang R. Aderhold ,  Blake Koelmel ,  llya Lavitsky

IPC: H01L21/687 ,  H01L21/263

CPC classification number: H01L21/68714 ,  H01L21/2636 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68735 ,  H05B3/0047

Abstract: Embodiments of the invention generally relate to a support ring to support a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge to support the substrate, and a substrate support formed on a top surface of the edge lip. The substrate support may include multiple projections extending upwardly and perpendicularly from a top surface of the edge lip, or multiple U-shaped clips securable to an edge portion of the edge lip. The substrate support thermally disconnects the substrate from the edge lip to prevent heat loss through the edge lip, resulting in an improved temperature profile across the substrate with a minimum edge temperature gradient.

Abstract translation: 本发明的实施例一般涉及用于在处理室中支撑衬底的支撑环。 在一个实施例中，支撑环包括内环，通过平坦部分连接到内环的外周边的外环，从内环的内周径向向内延伸的边缘，以形成支撑件 衬底和形成在边缘唇缘的顶表面上的衬底支撑件。 衬底支撑件可以包括从边缘唇缘的上表面向上并垂直延伸的多个突起，或者可固定到边缘唇缘的边缘部分的多个U形夹。 衬底支撑件使衬底与边缘唇缘热断开以防止通过边缘唇缘的热损失，导致跨越衬底的最小边缘温度梯度的改善的温度分布。

公开(公告)号：US20200035480A1

公开(公告)日：2020-01-30

申请号：US16594629

申请日：2019-10-07

Applicant: APPLIED MATERIALS, INC.

Inventor： JOSEPH M. RANISH

IPC: H01K1/32 ,  H01L21/67 ,  H05B3/00

Abstract: Embodiments of apparatus for providing radiant energy in the form of electromagnetic radiation are provided herein. In some embodiments a radiation source for electromagnetic radiation includes a tubular body formed from a material transparent to electromagnetic radiation; a filament disposed within the tubular body; and a reflective coating disposed on a portion of the tubular body to form a reflective portion, wherein the reflective portion is configured to minimize reflection of electromagnetic radiation emanating from the filament during use back to the filament.

公开(公告)号：US20150037017A1

公开(公告)日：2015-02-05

申请号：US14324557

申请日：2014-07-07

Applicant: APPLIED MATERIALS, INC.

Inventor： SHU-KWAN LAU ,  JOSEPH M. RANISH ,  PAUL BRILLHART ,  MEHMET TUGRUL SAMIR

IPC: H05B3/00

CPC classification number: H05B3/0047 ,  F27D5/0037

Abstract: Methods and apparatus are provided for reducing the thermal signal noise in process chambers using a non-contact temperature sensing device to measure the temperature of a component in the process chamber. In some embodiments, a susceptor for supporting a substrate in a process chamber includes a first surface comprising a substrate support surface; and a second surface opposite the first surface, wherein a portion of the second surface comprises a feature to absorb incident radiant energy.

Abstract translation: 提供的方法和装置用于使用非接触式温度感测装置来减小处理室中的热信号噪声，以测量处理室中的部件的温度。 在一些实施例中，用于在处理室中支撑衬底的基座包括包括衬底支撑表面的第一表面; 以及与第一表面相对的第二表面，其中第二表面的一部分包括吸收入射辐射能的特征。

公开(公告)号：US20130298832A1

公开(公告)日：2013-11-14

申请号：US13865672

申请日：2013-04-18

Applicant: APPLIED MATERIALS, INC.

Inventor： JOSEPH M. RANISH ,  PAUL BRILLHART ,  SATHEESH KUPPURAO ,  DONGMING IU

IPC: C30B25/10 ,  F21V7/00

CPC classification number: C30B25/105 ,  F21V7/0083

Abstract: Apparatus for processing a substrate are provided herein. In some embodiments, a lamphead for use in substrate processing includes a monolithic member having a contoured surface; a plurality of reflector cavities disposed in the contoured surface, wherein each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for a lamp; and a plurality of lamp passages, wherein each lamp passage extends into the monolithic member from one of the plurality of reflector cavities.

Abstract translation: 本文提供了用于处理基板的装置。 在一些实施例中，用于衬底处理的灯头包括具有轮廓表面的整体构件; 设置在轮廓表面中的多个反射器空腔，其中每个反射器腔被成形为用作反射器或接收用于灯的可更换反射器; 以及多个灯通道，其中每个灯通道从所述多个反射器腔中的一个延伸到所述整体构件中。

公开(公告)号：US20220351988A1

公开(公告)日：2022-11-03

申请号：US17867589

申请日：2022-07-18

Applicant: APPLIED MATERIALS, INC.

Inventor： ALEXANDER LERNER ,  ROEY SHAVIV ,  PHILLIP STOUT ,  JOSEPH M. RANISH ,  PRASHANTH KOTHNUR ,  SATISH RADHAKRISHNAN

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/448 ,  C23C16/44

Abstract: Methods and apparatus for controlling a flow of process material to a deposition chamber. In embodiments, the apparatus includes a deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each include an ampoule in fluid communication with the one or more delivery lines through an opening, and at least a first heat source and a second heat source, wherein the first heat source is a radiant heat source adjacent the ampoule and the second heat source is adjacent the opening, wherein the one or more delivery lines include one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits include one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber.

公开(公告)号：US20140287170A1

公开(公告)日：2014-09-25

申请号：US14186566

申请日：2014-02-21

Applicant: Applied Materials, Inc.

Inventor： JOSEPH M. RANISH ,  Paul Brillhart ,  Surajit Kumar

IPC: H01L21/67

CPC classification number: H01L21/67115 ,  Y10T428/13

Abstract: An apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors. A reflective liner may provide for improved temperature measurement and heating of a substrate.

Abstract translation: 对半导体衬底的处理装置进行说明。 该装置是具有光学透明的上部圆顶和下部圆顶的处理室。 在处理过程中真空保持在处理室中。 通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。 散热灯靠近下穹顶定位，热传感器设置在灯之间。 灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。 反射衬垫可以提供对衬底的改进的温度测量和加热。

公开(公告)号：US20140027060A1

公开(公告)日：2014-01-30

申请号：US13943345

申请日：2013-07-16

Applicant: Applied Materials, Inc

Inventor： JOSEPH M. RANISH ,  MEHMET TUGRUL SAMIR

IPC: B05B13/00

CPC classification number: B05B13/00 ,  C23C16/45574 ,  G01J5/0007 ,  G01J5/046 ,  G01J5/0818 ,  G01J5/0893 ,  H01L21/67109 ,  H01L21/67115

Abstract: In some embodiments, a gas distribution apparatus includes a first plate having a plurality of ports disposed through the first plate; a second plate disposed above and coupled to the first plate; a third plate disposed above and coupled to the second plate; a first plenum disposed between the first plate and the second plate and fluidly coupled to a first set of the plurality of ports, wherein the first plenum comprises a gas supply coupled to the first plenum to provide a process gas to an area proximate a substrate via a first set of the plurality of ports; a second plenum disposed between second plate and the third plate and fluidly coupled to the second set of ports, wherein the second plenum comprises a vacuum applied to the second plenum to remove reaction byproducts from the area proximate the substrate via a second set of the plurality ports.

Abstract translation: 在一些实施例中，气体分配装置包括具有穿过第一板布置的多个端口的第一板; 设置在所述第一板上方并联接到所述第一板的第二板; 设置在第二板上方并联接到第二板的第三板; 第一集气室，设置在第一板和第二板之间并且流体耦合到第一组多个端口，其中第一增压室包括连接到第一增压室的气体供应，以将处理气体提供给靠近基板的区域通过 第一组多个端口; 设置在第二板和第三板之间并流体耦合到第二组端口的第二增压室，其中第二增压室包括施加到第二增压室的真空，以通过多个第二组中的第二组从基板附近的区域除去反应副产物 港口。

公开(公告)号：US20130323936A1

公开(公告)日：2013-12-05

申请号：US13904810

申请日：2013-05-29

Applicant: Lawrence Livermore National Security, LLC ,  Applied Materials, Inc.

Inventor： JOSEPH M. RANISH ,  Aaron Muir Hunter ,  Thomas F. Soules ,  Alexander M. Rubenchik

IPC: H05B3/00 ,  H01L21/268

CPC classification number: H05B3/00 ,  H01L21/268 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68792 ,  Y10S148/09 ,  Y10S148/093

Abstract: Embodiments of the present invention provide apparatus and methods for performing rapid thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes a heating source disposed outside a chamber body and configured to provide thermal energy towards a processing volume. The substrate support defines a substrate supporting plane, and the substrate support is configured to support the substrate in the substrate supporting plane. The heating source includes a frame member having an inner wall surrounding an area large enough to encompass a surface area of the substrate, and a plurality of diode laser tiles mounted on the inner wall of the frame member. Each of the plurality of diode laser tiles is directed towards a corresponding area in the processing volume.

Abstract translation: 本发明的实施例提供了用于执行快速热处理的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置。 该设备包括设置在室主体外部并被配置为朝向处理容积提供热能的加热源。 衬底支撑件限定衬底支撑平面，并且衬底支撑件构造成在衬底支撑平面中支撑衬底。 加热源包括框架构件，该框架构件具有包围足以包围基板的表面区域的区域的内壁和安装在框架构件的内壁上的多个二极管激光瓦片。 多个二极管激光瓦片中的每一个被引导到处理体积中的相应区域。

公开(公告)号：US20190382890A1

公开(公告)日：2019-12-19

申请号：US16442527

申请日：2019-06-16

Applicant: APPLIED MATERIALS, INC.

Inventor： ALEXANDER LERNER ,  ROEY SHAVIV ,  PHILLIP STOUT ,  JOSEPH M. RANISH ,  PRASHANTH KOTHNUR ,  SATISH RADHAKRISHNAN

IPC: C23C16/448 ,  H01L21/67 ,  C23C16/455

Abstract: Methods and apparatus for controlling a flow of process material to a deposition chamber. In embodiments, the apparatus includes a deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each include an ampoule in fluid communication with the one or more delivery lines through an opening, and at least a first heat source and a second heat source, wherein the first heat source is a radiant heat source adjacent the ampoule and a second heat source is adjacent the opening, wherein the one or more delivery lines include one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits include one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber.