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    PROCESS CHAMBER HAVING MORE UNIFORM GAS FLOW
    1.
    发明申请
    PROCESS CHAMBER HAVING MORE UNIFORM GAS FLOW 审中-公开
    具有更多均匀气体流量的过程室

    公开(公告)号：US20140083360A1

    公开(公告)日：2014-03-27

    申请号：US14035922

    申请日：2013-09-24

    Applicant: APPLIED MATERIALS, INC.

    Inventor： MEHMET TUGRUL SAMIR ,  SHU-KWAN LAU

    IPC: H01L21/02

    CPC classification number: H01L21/02104 ,  C23C16/45502 ,  C23C16/46 ,  C30B25/08 ,  C30B25/105 ,  C30B25/14 ,  H01L21/6719

    Abstract: Embodiments of process chambers having flow path defining components that may provide more uniform gas flow are provided herein. In some embodiments, a process chamber lid to provide more uniform gas flow may include a dome; an outwardly extending flange disposed about a peripheral edge of the dome; and an upwardly sloped portion coupling the peripheral edge of the dome to the outwardly extending flange, wherein a portion of the outwardly extending flange and a portion of the upwardly sloped portion form a flow path with an interior surface of a process chamber when the process chamber lid is disposed atop the process chamber to provide a flow of gas towards an interior of the process chamber, wherein an angle between the upwardly sloped portion and a bottom surface of the outwardly extending flange is less than 90 degrees.

    Abstract translation: 本文提供了具有限定可提供更均匀气体流动的部件的流路的处理室的实施例。 在一些实施例中，提供更均匀气流的处理室盖可包括圆顶; 围绕圆顶的周边设置的向外延伸的凸缘; 以及将圆顶的周边边缘连接到向外延伸的凸缘的向上倾斜的部分，其中向外延伸的凸缘的一部分和向上倾斜的部分的一部分形成具有处理室的内表面的流动路径，当处理室 盖被设置在处理室顶部以向处理室的内部提供气流，其中向上倾斜的部分和向外延伸的凸缘的底表面之间的角度小于90度。

    COMPACT AMPOULE THERMAL MANAGEMENT SYSTEM
    3.
    发明申请
    COMPACT AMPOULE THERMAL MANAGEMENT SYSTEM 有权
    紧凑型热管理系统

    公开(公告)号：US20130319015A1

    公开(公告)日：2013-12-05

    申请号：US13902310

    申请日：2013-05-24

    Applicant: APPLIED MATERIALS, INC.

    Inventor： DAVID K. CARLSON ,  ERROL ANTONIO C. SANCHEZ ,  KENRIC CHOI ,  MARCEL E. JOSEPHSON ,  DENNIS DEMARS ,  EMRE CUVALCI ,  MEHMET TUGRUL SAMIR

    IPC: F25B21/02

    CPC classification number: F25B21/02 ,  C23C16/448 ,  C23C16/4482

    Abstract: Methods and apparatus for thermal management of a precursor for use in substrate processing are provided herein. In some embodiments, an apparatus for thermal management of a precursor for use in substrate processing may include a body having an opening sized to receive a storage container having a liquid or solid precursor disposed therein, the body fabricated from thermally conductive material; one or more thermoelectric devices coupled to the body proximate the opening; a heat sink coupled to the one or more thermoelectric devices; and a fan disposed proximate to a back side of the heat sink to provide a flow of air to the heat sink.

    Abstract translation: 本文提供了用于基板处理的前体的热管理方法和装置。 在一些实施例中，用于对基板处理中使用的前体进行热管理的设备可以包括具有开口尺寸的开口的主体，该开口的尺寸适于容纳设置在其中的液体或固体前体的存储容器，所述主体由导热材料制成; 一个或多个耦合到靠近开口的本体的热电装置; 耦合到所述一个或多个热电装置的散热器; 以及靠近所述散热器的后侧设置的风扇，以向所述散热器提供空气流。

    SUBSTRATE SUPPORT WITH SURFACE FEATURE FOR REDUCED REFLECTION AND MANUFACTURING TECHNIQUES FOR PRODUCING SAME
    4.
    发明申请
    SUBSTRATE SUPPORT WITH SURFACE FEATURE FOR REDUCED REFLECTION AND MANUFACTURING TECHNIQUES FOR PRODUCING SAME 有权
    具有表面特征的基板支撑，用于减少反射和制造其制造技术

    公开(公告)号：US20150037017A1

    公开(公告)日：2015-02-05

    申请号：US14324557

    申请日：2014-07-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： SHU-KWAN LAU ,  JOSEPH M. RANISH ,  PAUL BRILLHART ,  MEHMET TUGRUL SAMIR

    IPC: H05B3/00

    CPC classification number: H05B3/0047 ,  F27D5/0037

    Abstract: Methods and apparatus are provided for reducing the thermal signal noise in process chambers using a non-contact temperature sensing device to measure the temperature of a component in the process chamber. In some embodiments, a susceptor for supporting a substrate in a process chamber includes a first surface comprising a substrate support surface; and a second surface opposite the first surface, wherein a portion of the second surface comprises a feature to absorb incident radiant energy.

    Abstract translation: 提供的方法和装置用于使用非接触式温度感测装置来减小处理室中的热信号噪声，以测量处理室中的部件的温度。 在一些实施例中，用于在处理室中支撑衬底的基座包括包括衬底支撑表面的第一表面; 以及与第一表面相对的第二表面，其中第二表面的一部分包括吸收入射辐射能的特征。

    SUSCEPTOR SUPPORT SHAFT FOR IMPROVED WAFER TEMPERATURE UNIFORMITY AND PROCESS REPEATABILITY
    5.
    发明申请
    SUSCEPTOR SUPPORT SHAFT FOR IMPROVED WAFER TEMPERATURE UNIFORMITY AND PROCESS REPEATABILITY 有权
    用于改进波浪温度均匀性和过程可重复性的SUSCEPTOR支持轴

    公开(公告)号：US20140251208A1

    公开(公告)日：2014-09-11

    申请号：US14182634

    申请日：2014-02-18

    Applicant: Applied Materials, Inc.

    Inventor： MEHMET TUGRUL SAMIR ,  Shu-Kwan Lau

    IPC: B05C13/00

    CPC classification number: H01L21/68792 ,  B05C11/08 ,  H01L21/68742

    Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber.

    Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座，其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化，即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量，这增加了处理室的斜坡上升和下降速率。

    EPITAXIAL CHAMBER WITH CUSTOMIZABLE FLOW INJECTION
    6.
    发明申请
    EPITAXIAL CHAMBER WITH CUSTOMIZABLE FLOW INJECTION 审中-公开
    具有可自定义流动注射的外壳室

    公开(公告)号：US20140137801A1

    公开(公告)日：2014-05-22

    申请号：US14047047

    申请日：2013-10-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： SHU-KWAN LAU ,  ZHEPENG CONG ,  MEHMET TUGRUL SAMIR ,  ZHIYUAN YE ,  DAVID K. CARLSON ,  XUEBIN LI ,  ERROL ANTONIO C. SANCHEZ ,  SWAMINATHAN SRINIVASAN

    IPC: C23C16/455

    CPC classification number: C23C16/45563 ,  C23C16/45514 ,  C30B25/14

    Abstract: Apparatus for processing a substrate in a process chamber are provided here. In some embodiments, a gas injector for use in a process chamber includes a first set of outlet ports that provide an angled injection of a first process gas at an angle to a planar surface, and a second set of outlet ports proximate the first set of outlet ports that provide a pressurized laminar flow of a second process gas substantially along the planar surface, the planar surface extending normal to the second set of outlet ports.

    Abstract translation: 在此处提供用于处理处理室中的基板的设备。 在一些实施例中，用于处理室的气体注射器包括第一组出口端口，其提供与平坦表面成一定角度的第一处理气体的成角度注入，以及靠近第一组 出口端口，其基本上沿平面表面提供第二处理气体的加压层流，平面垂直于第二组出口延伸。

    GAS DISTRIBUTION APPARATUS FOR SUBSTRATE PROCESSING SYSTEMS
    7.
    发明申请
    GAS DISTRIBUTION APPARATUS FOR SUBSTRATE PROCESSING SYSTEMS 审中-公开
    用于基板加工系统的气体分配装置

    公开(公告)号：US20140027060A1

    公开(公告)日：2014-01-30

    申请号：US13943345

    申请日：2013-07-16

    Applicant: Applied Materials, Inc

    Inventor： JOSEPH M. RANISH ,  MEHMET TUGRUL SAMIR

    IPC: B05B13/00

    CPC classification number: B05B13/00 ,  C23C16/45574 ,  G01J5/0007 ,  G01J5/046 ,  G01J5/0818 ,  G01J5/0893 ,  H01L21/67109 ,  H01L21/67115

    Abstract: In some embodiments, a gas distribution apparatus includes a first plate having a plurality of ports disposed through the first plate; a second plate disposed above and coupled to the first plate; a third plate disposed above and coupled to the second plate; a first plenum disposed between the first plate and the second plate and fluidly coupled to a first set of the plurality of ports, wherein the first plenum comprises a gas supply coupled to the first plenum to provide a process gas to an area proximate a substrate via a first set of the plurality of ports; a second plenum disposed between second plate and the third plate and fluidly coupled to the second set of ports, wherein the second plenum comprises a vacuum applied to the second plenum to remove reaction byproducts from the area proximate the substrate via a second set of the plurality ports.

    Abstract translation: 在一些实施例中，气体分配装置包括具有穿过第一板布置的多个端口的第一板; 设置在所述第一板上方并联接到所述第一板的第二板; 设置在第二板上方并联接到第二板的第三板; 第一集气室，设置在第一板和第二板之间并且流体耦合到第一组多个端口，其中第一增压室包括连接到第一增压室的气体供应，以将处理气体提供给靠近基板的区域通过 第一组多个端口; 设置在第二板和第三板之间并流体耦合到第二组端口的第二增压室，其中第二增压室包括施加到第二增压室的真空，以通过多个第二组中的第二组从基板附近的区域除去反应副产物 港口。

    MULTI-ZONE QUARTZ GAS DISTRIBUTION APPARATUS
    8.
    发明申请
    MULTI-ZONE QUARTZ GAS DISTRIBUTION APPARATUS 审中-公开
    多区Quartz气体分配装置

    公开(公告)号：US20140026816A1

    公开(公告)日：2014-01-30

    申请号：US13937889

    申请日：2013-07-09

    Applicant: APPLIED MATERIALS, INC.

    Inventor： NYI OO MYO ,  MEHMET TUGRUL SAMIR

    IPC: B05B9/03

    CPC classification number: B05B9/03 ,  C23C16/45563 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/45574

    Abstract: Substrate processing apparatus and gas distribution apparatus are provided herein. In some embodiments, a gas distribution apparatus includes a first quartz layer having a plurality of openings disposed through the first quartz layer; a second quartz layer coupled to the first quartz layer; a first plenum fluidly coupled to a first set of the plurality of openings and disposed between the first quartz layer and the second quartz layer; a second plenum fluidly coupled to a second set of the plurality of openings and disposed between the first quartz layer and the second quartz layer; and one or more outlets disposed on a side of the gas distribution apparatus opposite the plurality of openings disposed through the first quartz layer to provide a gas to the side of the gas distribution apparatus opposite the first quartz layer.

    Abstract translation: 本文提供了基板处理装置和气体分配装置。 在一些实施例中，气体分配装置包括具有穿过第一石英层设置的多个开口的第一石英层; 耦合到第一石英层的第二石英层; 第一增压室，其流体耦合到所述多个开口的第一组，并且设置在所述第一石英层和所述第二石英层之间; 第二增压室流体耦合到所述多个开口的第二组，并且设置在所述第一石英层和所述第二石英层之间; 以及一个或多个出口，其布置在气体分配设备的与通过第一石英层设置的多个开口相对的一侧上，以向与第一石英层相对的气体分配设备侧提供气体。

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