Abstract:
Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber comprises a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in2 to about 1410 in2.
Abstract:
A substrate polishing apparatus includes a processing station including a plurality of polishing platens having a polishing pad thereon, and a substrate support configured to hold a substrate therein, wherein the substrate support is positionable to simultaneously position a substrate supported therein against polishing pads on at least two of the plurality of polishing platens. The processing station can form a standalone polishing system, or be one of at least two processing statins in a polishing tool, where at least one other polishing station includes a polishing platen to support a polishing pad thereon.
Abstract:
Embodiments herein relate to a retaining ring for use in a polishing process. The retaining ring includes an annular body having an upper surface and a lower surface. An inner surface is connected to the upper surface and the lower surface. The inner surface includes one or more surfaces that are used to retain a substrate during processing. The one or more surfaces have an angle relative to a central axis of the retaining ring. The inner surface also includes a plurality of facets. Channels are disposed within the retaining ring to allow passage of a polishing fluid from an inner surface to an outer surface of the retaining ring disposed opposite of the inner surface.
Abstract:
A retaining ring for a polishing system is disclosed. The retaining ring has a process-resistant coating over a portion thereof. The process-resistant coating is a thin, smooth, conformal layer that is resistant to wear and chemical attack. The process-resistant coating is formed by a method that includes vapor deposition from a precursor gas mixture, which may deposit polyparaxyxylene from a gas mixture comprising paracyclophane. Adhesion of the process-resistant coating to the retaining ring may be enhanced by treating the surface of the ring prior to forming the coating. Resistance of the coating to the process may be further enhanced by treating the surface of the coating with an etching or deposition gas to impart texture.
Abstract:
Embodiments herein relate to a retaining ring for use in a polishing process. The retaining ring includes an annular body having an upper surface and a lower surface. An inner surface is connected to the upper surface and the lower surface. The inner surface includes one or more surfaces that are used to retain a substrate during processing. The one or more surfaces have an angle relative to a central axis of the retaining ring. The inner surface also includes a plurality of facets. Channels are disposed within the retaining ring to allow passage of a polishing fluid from an inner surface to an outer surface of the retaining ring disposed opposite of the inner surface.
Abstract:
Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.
Abstract:
Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.
Abstract:
A method is provided to minimize travel distance and time between correction locations on a substrate when polishing a local area of a substrate, such as a semiconductor wafer, using a location specific polishing module. A correction profile is determined and a recipe based on the correction profile is used to polish a substrate. A polishing pad assembly traverses between a first correction location and a second correction location using the combined motion of a substrate support chuck and a support arm coupled at a first end thereof to the polishing pad assembly. The chuck rotates about a center axis thereof. The positioning arm may sweep about a vertical axis disposed through a second end of the support arm. The combined motion of the chuck and the positioning arm causes the polishing pad assembly to form a spiral shaped polishing path on the substrate.
Abstract:
A polishing module including a chuck having a substrate receiving surface and a perimeter, and one or more polishing pad assemblies positioned about the perimeter of the chuck, wherein each of the one or more polishing pad assemblies are coupled to an actuator that provides movement of the respective polishing pad assemblies in one or more of a sweep direction, a radial direction, and a oscillating mode relative to the substrate receiving surface and are limited in radial movement to about less than one-half of the radius of the chuck as measured from the perimeter of the chuck.
Abstract:
A polishing head for chemical mechanical planarization is provided. The polishing head includes a housing and a flexible membrane secured to the housing. At least a first, second, and third pressurizable chamber are disposed in the housing and each chamber contacts the flexible membrane. A first pressure delivery channel couples to the first chamber. A second pressure delivery channel couples to the third chamber. A first pressure feed line couples the first pressure delivery channel to the second chamber. A second pressure feed line couples the second pressure delivery channel to the second chamber. A first manually movable plug interfaces with the first pressure feed line to allow or block pressure from the first pressure delivery channel to the second chamber. A second manually movable plug interfaces with the second pressure feed line to allow or block pressure from the first pressure delivery channel to the second chamber.