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    Etch suppression with germanium
    2.
    发明授权
    Etch suppression with germanium 有权
    用锗蚀刻抑制

    公开(公告)号：US09576809B2

    公开(公告)日：2017-02-21

    申请号：US14269544

    申请日：2014-05-05

    Applicant: Applied Materials, Inc.

    Inventor： Mikhail Korolik ,  Nitin K. Ingle ,  Jingchun Zhang ,  Anchuan Wang ,  Jie Liu

    IPC: H01L21/461 ,  H01L21/3065 ,  H01J37/32

    CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J2237/3346

    Abstract: Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon. The plasmas effluents react with exposed surfaces and selectively remove silicon while very slowly removing other exposed materials. The methods are useful for removing Si(1-X)GeX faster than Si(1-Y)GeY, for X

    Abstract translation: 描述了相对于硅锗选择性地蚀刻硅的方法。 该方法包括使用由含氟前体和含氢前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与硅反应。 等离子体流出物与暴露的表面反应并选择性地去除硅，同时非常缓慢地除去其它暴露的材料。 对于X

    Vertical gate separation
    3.
    发明授权
    Vertical gate separation 有权
    垂直门分离

    公开(公告)号：US09449846B2

    公开(公告)日：2016-09-20

    申请号：US14607883

    申请日：2015-01-28

    Applicant: Applied Materials, Inc.

    Inventor： Jie Liu ,  Vinod R. Purayath ,  Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/302 ,  H01L21/3213 ,  H01L21/8234 ,  H01L27/115

    CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32954 ,  H01L21/32135 ,  H01L21/823437 ,  H01L27/11582

    Abstract: Methods of selectively etching tungsten from the surface of a patterned substrate are described. The methods electrically separate vertically arranged tungsten slabs from one another as needed. The vertically arranged tungsten slabs may form the walls of a trench during manufacture of a vertical flash memory cell. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a remote plasma region. Process parameters are provided which result in uniform tungsten recess within the trench. A low electron temperature is maintained in the substrate processing region to achieve high etch selectivity and uniform removal throughout the trench.

    Abstract translation: 描述了从图案化衬底的表面选择性地蚀刻钨的方法。 所述方法根据需要将垂直排列的钨板彼此电分离。 在垂直闪存单元的制造期间，垂直布置的钨板可以形成沟槽的壁。 钨蚀刻可以相对于诸如硅，多晶硅，氧化硅，氧化铝，氮化钛和氮化硅的膜选择性地去除钨。 这些方法包括将电短路钨板暴露于在远程等离子体区域中形成的远程激发的氟。 提供了在沟槽内产生均匀的钨凹槽的工艺参数。 在基板处理区域中保持低电子温度，以实现高蚀刻选择性并且在整个沟槽中均匀地去除。

    Oxide and metal removal
    4.
    发明授权
    Oxide and metal removal 有权

    公开(公告)号：US10465294B2

    公开(公告)日：2019-11-05

    申请号：US15095342

    申请日：2016-04-11

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle ,  Jeffrey W. Anthis ,  Benjamin Schmiege

    IPC: H01L21/3213 ,  C23F1/02 ,  C23F1/12 ,  H01J37/32

    Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

    Tungsten separation
    5.
    发明授权
    Tungsten separation 有权
    钨分离

    公开(公告)号：US09553102B2

    公开(公告)日：2017-01-24

    申请号：US14463561

    申请日：2014-08-19

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L27/115 ,  C23F4/00 ,  H01L21/28 ,  H01J37/32

    CPC classification number: H01L27/11582 ,  C23F4/00 ,  H01J37/32357 ,  H01L21/28 ,  H01L21/32136 ,  H01L21/67225 ,  H01L27/11568

    Abstract: Methods of selectively etching tungsten from the surface of a patterned substrate are described. The etch electrically separates vertically arranged tungsten slabs from one another as needed, for example, in the manufacture of vertical flash memory devices. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a capacitively-excited chamber plasma region. The methods then include exposing the tungsten slabs to remotely-excited fluorine formed in an inductively-excited remote plasma system. A low electron temperature is maintained in the substrate processing region during each operation to achieve high etch selectivity.

    Abstract translation: 描述了从图案化衬底的表面选择性地蚀刻钨的方法。 根据需要，蚀刻将垂直布置的钨板彼此电分离，例如在垂直闪存器件的制造中。 钨蚀刻可以相对于诸如硅，多晶硅，氧化硅，氧化铝，氮化钛和氮化硅的膜选择性地去除钨。 所述方法包括将电短路钨板暴露于在电容激发室等离子体区域中形成的远激发氟。 所述方法包括将钨板暴露于在感应激发的远程等离子体系统中形成的远程激发的氟。 在每个操作期间在基板处理区域中维持低电子温度以实现高蚀刻选择性。

    CHLORINE-BASED HARDMASK REMOVAL
    6.
    发明申请
    CHLORINE-BASED HARDMASK REMOVAL 有权
    基于氯化物的硬质合金去除

    公开(公告)号：US20160086816A1

    公开(公告)日：2016-03-24

    申请号：US14543683

    申请日：2014-11-17

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Mandar Pandit ,  Zhenjiang Cui ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle ,  Jie Liu

    IPC: H01L21/311

    CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

    Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

    Abstract translation: 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在去除过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用在含氯前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。

    TUNGSTEN SEPARATION
    7.
    发明申请
    TUNGSTEN SEPARATION 有权
    TUNGSTEN分离

    公开(公告)号：US20160056167A1

    公开(公告)日：2016-02-25

    申请号：US14463561

    申请日：2014-08-19

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L27/115 ,  C23F4/00

    CPC classification number: H01L27/11582 ,  C23F4/00 ,  H01J37/32357 ,  H01L21/28 ,  H01L21/32136 ,  H01L21/67225 ,  H01L27/11568

    Abstract: Methods of selectively etching tungsten from the surface of a patterned substrate are described. The etch electrically separates vertically arranged tungsten slabs from one another as needed, for example, in the manufacture of vertical flash memory devices. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a capacitively-excited chamber plasma region. The methods then include exposing the tungsten slabs to remotely-excited fluorine formed in an inductively-excited remote plasma system. A low electron temperature is maintained in the substrate processing region during each operation to achieve high etch selectivity.

    Abstract translation: 描述了从图案化衬底的表面选择性地蚀刻钨的方法。 根据需要，蚀刻将垂直布置的钨板彼此电分离，例如在垂直闪存器件的制造中。 钨蚀刻可以相对于诸如硅，多晶硅，氧化硅，氧化铝，氮化钛和氮化硅的膜选择性地去除钨。 所述方法包括将电短路钨板暴露于在电容激发室等离子体区域中形成的远激发氟。 所述方法包括将钨板暴露于在感应激发的远程等离子体系统中形成的远程激发的氟。 在每个操作期间在基板处理区域中维持低电子温度以实现高蚀刻选择性。

    GAS-PHASE TUNGSTEN ETCH
    8.
    发明申请
    GAS-PHASE TUNGSTEN ETCH 有权
    气相催化

    公开(公告)号：US20150262829A1

    公开(公告)日：2015-09-17

    申请号：US14215701

    申请日：2014-03-17

    Applicant: Applied Materials, Inc.

    Inventor： Seung Park ,  Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Sang-jin Kim

    IPC: H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/32136

    Abstract: Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a high flow of helium. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with tungsten coating a patterned substrate having high aspect ratio trenches. The plasmas effluents react with exposed surfaces and evenly remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region. Optionally, the methods may include concurrent ion bombardment of the patterned substrate to help remove potentially thicker horizontal tungsten regions, e.g., at the bottom of the trenches or between trenches.

    Abstract translation: 描述了从高纵横比沟槽均匀地蚀刻钨衬垫的方法。 这些方法包括使用由含氟前体形成的等离子体流出物和大量氦气的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与钨涂覆具有高纵横比沟槽的图案化衬底。 等离子体流出物与暴露的表面反应，并从沟槽的外部和沟槽的侧壁均匀地除去钨。 等离子体流出物通过位于远程等离子体和基板处理区域之间的离子抑制元件。 可选地，所述方法可以包括图案化衬底的同时离子轰击，以帮助去除潜在的较厚的水平钨区域，例如在沟槽的底部或沟槽之间。

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