公开(公告)号：US10508339B2

公开(公告)日：2019-12-17

申请号：US15663734

申请日：2017-07-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaoxiong Yuan ,  Yu Lei ,  Yi Xu ,  Kazuya Daito ,  Pingyan Lei ,  Dien-Yeh Wu ,  Umesh M. Kelkar ,  Vikash Banthia

IPC: C23C16/455 ,  H01L21/67

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

公开(公告)号：US10395916B2

公开(公告)日：2019-08-27

申请号：US15699110

申请日：2017-09-08

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Vikash Banthia ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma

IPC: H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768

Abstract: Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.

公开(公告)号：US20180155838A1

公开(公告)日：2018-06-07

申请号：US15421964

申请日：2017-02-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. RASHEED ,  Muhannad MUSTAFA ,  Hamid TAVASSOLI ,  Steven V. SANSONI ,  Cheng-Hsiung TSAI ,  Vikash Banthia

IPC: C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  H01L21/683

CPC classification number: C23C16/46 ,  C23C16/4584 ,  C23C16/4586 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68785

Abstract: Embodiments of the present disclosure are directed process kits for use with an in-chamber heater and substrate rotating mechanism. In some embodiments consistent with the present disclosure, a process kit for use with a rotatable substrate support heater pedestal for supporting a substrate in a process chamber may include an upper edge ring including a top ledge and a skirt the extends downward from the top ledge, a lower edge ring that at least partially supports the upper edge ring and aligns the upper edge ring with the substrate support heater pedestal, a bottom plate disposed on a bottom of the process chamber that supports the upper edge ring when the substrate support heater pedestal is in a lowered non-processing position, and a shadow ring that couples with the upper edge ring when the substrate support heater pedestal is in a raised processing position.

公开(公告)号：US11387134B2

公开(公告)日：2022-07-12

申请号：US16249716

申请日：2019-01-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhannad Mustafa ,  Muhammad M. Rasheed ,  Yu Lei ,  Avgerinos V. Gelatos ,  Vikash Banthia ,  Victor H. Calderon ,  Shi Wei Toh ,  Yung-Hsin Lee ,  Anindita Sen

IPC: H01L21/687 ,  H01J37/32 ,  H01L21/683

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

公开(公告)号：US10256144B2

公开(公告)日：2019-04-09

申请号：US15498024

申请日：2017-04-26

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Feiyue Ma ,  Yu Lei ,  Kai Wu ,  Mehul B. Naik ,  Zhiyuan Wu ,  Vikash Banthia ,  Hua Al

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

Abstract: Embodiments of the present disclosure generally relate an interconnect formed on a substrate and a method of forming the interconnect thereon. In an embodiment, a via and trench in a stack formed on the substrate. A bottom of the via is pre-treated using a first pre-treatment procedure. A sidewall of the via is pre-treated using a second pre-treatment procedure. A first metal fill material of a first type is deposited on the stack, in the via. A second metal fill material of a second type is deposited on the stack, in the trench.

公开(公告)号：US10256076B2

公开(公告)日：2019-04-09

申请号：US14984935

申请日：2015-12-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Shi Wei Toh ,  Avgerinos V. Gelatos ,  Vikash Banthia

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458 ,  C23C16/455 ,  H01L21/477

Abstract: Methods of etching include cycles of low temperature etching of a material layer disposed on a substrate, with at least one of the cycles being followed by activation of unreacted etchant deposits during an inert gas plasma treatment. In some embodiments, a method includes: positioning a substrate in a processing chamber; generating, in a first etching cycle, a plasma from a gas mixture within the processing chamber to form a processing gas including an etchant; exposing, to the etchant, a portion of a material layer disposed on a substrate maintained at a first temperature; generating an inert gas plasma within the processing chamber; generating, in a second etching cycle, a plasma from a gas mixture within the processing chamber to form a processing gas including an etchant; and heating the substrate to a second temperature to sublimate a byproduct of reaction between the etchant and the material layer.

公开(公告)号：US20190017165A1

公开(公告)日：2019-01-17

申请号：US16033866

申请日：2018-07-12

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Sang Ho Yu ,  Vikash Banthia

IPC: C23C16/08 ,  C23C16/455

Abstract: Methods of depositing low resistivity tungsten nucleation layers using alkyl borane reducing agents are described. Alkyl borane reducing agents utilized include compounds with the general formula BR3, where R is a C1-C6 alkyl group. Apparatus for performing atomic layer deposition of tungsten nucleation layers using alkyl borane reducing agents are also described.

公开(公告)号：US20180145034A1

公开(公告)日：2018-05-24

申请号：US15817985

申请日：2017-11-20

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Feiyue Ma ,  Yu Lei ,  Kazuya Daito ,  Vikash Banthia ,  Kai Wu ,  Jenn Yue Wang ,  Mei Chang

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3205 ,  H01L23/528 ,  H01L21/285

Abstract: Methods of forming a contact line comprising cleaning the surface of a cobalt film in a trench and forming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germide. Semiconductor devices with the contact lines are also disclosed.

公开(公告)号：US20170117118A1

公开(公告)日：2017-04-27

申请号：US14984935

申请日：2015-12-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Shi Wei TOH ,  Avgerinos V. GELATOS ,  Vikash Banthia

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32082 ,  C23C16/455 ,  C23C16/505 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32715 ,  H01J2237/3347 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/477 ,  H01L21/67248

Abstract: Methods of etching include cycles of low temperature etching of a material layer disposed on a substrate, with at least one of the cycles being followed by activation of unreacted etchant deposits during an inert gas plasma treatment. In some embodiments, a method includes: positioning a substrate in a processing chamber; generating, in a first etching cycle, a plasma from a gas mixture within the processing chamber to form a processing gas including an etchant; exposing, to the etchant, a portion of a material layer disposed on a substrate maintained at a first temperature; generating an inert gas plasma within the processing chamber; generating, in a second etching cycle, a plasma from a gas mixture within the processing chamber to form a processing gas including an etchant; and heating the substrate to a second temperature to sublimate a byproduct of reaction between the etchant and the material layer.

公开(公告)号：US11355391B2

公开(公告)日：2022-06-07

申请号：US16803842

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Feiyue Ma ,  Kai Wu ,  Yu Lei ,  Kazuya Daito ,  Yi Xu ,  Vikash Banthia ,  Mei Chang ,  He Ren ,  Raymond Hoiman Hung ,  Yakuan Yao ,  Avgerinos V. Gelatos ,  David T. Or ,  Jing Zhou ,  Guoqiang Jian ,  Chi-Chou Lin ,  Yiming Lai ,  Jia Ye ,  Jenn-Yue Wang

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3213

Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.