公开(公告)号：US09735009B2

公开(公告)日：2017-08-15

申请号：US14846215

申请日：2015-09-04

Applicant: Applied Materials, Inc.

Inventor： Bo Zheng ,  Avgerinos V. Gelatos ,  Anshul Vyas ,  Raymond Hoiman Hung

IPC: H01L21/20 ,  H01L21/3065 ,  H01L21/02 ,  C23C16/02 ,  C23C16/44 ,  C23C16/48 ,  H01L21/67

CPC classification number: H01L21/02661 ,  C23C16/0245 ,  C23C16/4405 ,  C23C16/481 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/67207

Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.

公开(公告)号：US20220231137A1

公开(公告)日：2022-07-21

申请号：US17152190

申请日：2021-01-19

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Wenting Hou ,  Takashi Kuratomi ,  Avgerinos V. Gelatos ,  Jianxin Lei ,  Liqi Wu ,  Raymond Hoiman Hung ,  Tae Hong Ha ,  Xianmin Tang

IPC: H01L29/417 ,  H01L21/285 ,  H01L21/8234

Abstract: A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a substrate; in the absence of an air break after the depositing of the metal silicide layer, preparing a metal cap layer directly on the metal silicide layer; and depositing a conductor on the metal cap layer.

公开(公告)号：US20190326115A1

公开(公告)日：2019-10-24

申请号：US16232609

申请日：2018-12-26

Applicant: Applied Materials, Inc.

Inventor： Bo Zheng ,  Avgerinos V. Gelatos ,  Anshul Vyas ,  Raymond Hoiman Hung

IPC: H01L21/02 ,  C23C16/02 ,  H01L21/67 ,  C23C16/48 ,  C23C16/44

Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.

公开(公告)号：US11037838B2

公开(公告)日：2021-06-15

申请号：US16559227

申请日：2019-09-03

Applicant: Applied Materials, Inc.

Inventor： Xuebin Li ,  Schubert S. Chu ,  Errol Antonio C. Sanchez ,  Patricia M. Liu ,  Gaurav Thareja ,  Raymond Hoiman Hung

IPC: H01L21/8238 ,  H01L21/321 ,  H01L21/02 ,  H01L29/66

Abstract: The systems and methods discussed herein are for a cluster tool that can be used for MOSFET device fabrication, including NMOS and PMOS devices. The cluster tool includes process chambers for pre-cleaning, metal-silicide or metal-germanide film formation, and surface protection operations such as capping and nitridation. The cluster tool can include one or more process chambers configured to form a source and a drain. The devices fabricated in the cluster tool are fabricated to have at least one protective layer formed over the metal-silicide or metal-germanide film to protect the film from contamination during handling and transfer to separate systems.

公开(公告)号：US20240038859A1

公开(公告)日：2024-02-01

申请号：US18379600

申请日：2023-10-12

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Wenting Hou ,  Takashi Kuratomi ,  Avgerinos V. Gelatos ,  Jianxin Lei ,  Liqi Wu ,  Raymond Hoiman Hung ,  Tae Hong Ha ,  Xianmin Tang

IPC: H01L29/417 ,  H01L21/8234 ,  H01L21/285

CPC classification number: H01L29/41791 ,  H01L21/823418 ,  H01L21/28518

Abstract: A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a substrate; in the absence of an air break after the depositing of the metal silicide layer, preparing a metal cap layer directly on the metal silicide layer; and depositing a conductor on the metal cap layer.

公开(公告)号：US11355391B2

公开(公告)日：2022-06-07

申请号：US16803842

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Feiyue Ma ,  Kai Wu ,  Yu Lei ,  Kazuya Daito ,  Yi Xu ,  Vikash Banthia ,  Mei Chang ,  He Ren ,  Raymond Hoiman Hung ,  Yakuan Yao ,  Avgerinos V. Gelatos ,  David T. Or ,  Jing Zhou ,  Guoqiang Jian ,  Chi-Chou Lin ,  Yiming Lai ,  Jia Ye ,  Jenn-Yue Wang

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3213

Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

公开(公告)号：US10163630B2

公开(公告)日：2018-12-25

申请号：US15674606

申请日：2017-08-11

Applicant: Applied Materials, Inc.

Inventor： Bo Zheng ,  Avgerinos V. Gelatos ,  Anshul Vyas ,  Raymond Hoiman Hung

IPC: H01L21/205 ,  C23C16/02 ,  H01L21/02 ,  C23C16/44 ,  C23C16/48 ,  H01L21/67

Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.

公开(公告)号：US09960275B1

公开(公告)日：2018-05-01

申请号：US15490593

申请日：2017-04-18

Applicant: Applied Materials, Inc.

Inventor： Chih-Yang Chang ,  Raymond Hoiman Hung ,  Tatsuya E. Sato ,  Nam Sung Kim ,  Shiyu Sun ,  Bingxi Sun Wood

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L21/768 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L29/7851 ,  H01L21/0217 ,  H01L21/31116 ,  H01L29/6653 ,  H01L29/66795

Abstract: Embodiments disclosed herein relate to an improved transistor with reduced parasitic capacitance. In one embodiment, the transistor device includes a three-dimensional fin structure protruding from a surface of a substrate, the three-dimensional fin structure comprising a top surface and two opposing sidewalls, a first insulating layer formed on the two opposing sidewalls of the three-dimension fin structure, a sacrificial spacer layer conformally formed on the first insulating layer, wherein the sacrificial spacer layer comprises an aluminum oxide based material or a titanium nitride based material, and a second insulating layer conformally formed on the sacrificial spacer layer.