公开(公告)号：US20240395555A1

公开(公告)日：2024-11-28

申请号：US18791605

申请日：2024-08-01

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Eric James Shero ,  Charles Dezelah ,  Giuseppe Alessio Verni ,  Petri Raisanen

IPC: H01L21/28 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01L29/49

Abstract: Methods and systems for depositing chromium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process, depositing a chromium nitride layer onto a surface of the substrate. The deposition process can include providing a chromium precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The deposition process may be a thermal cyclical deposition process.

公开(公告)号：US11837483B2

公开(公告)日：2023-12-05

申请号：US17670151

申请日：2022-02-11

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Ward Johnson

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/302

CPC classification number: H01L21/67393 ,  H01L21/302 ,  H01L21/67201

Abstract: An apparatus and method for reducing moisture within a wafer handling chamber is disclosed. The moisture reduction results in reduced oxidation of a wafer. The moisture reduction is made possible through use of valves and purging gas. Operation of the valves may result in improved localized purging.

公开(公告)号：US20230298902A1

公开(公告)日：2023-09-21

申请号：US18121064

申请日：2023-03-14

Applicant: ASM IP HOLDING B.V.

Inventor： Jiyeon Kim ,  Petri Raisanen ,  Dong Li ,  Eric James Shero

IPC: H01L21/3205 ,  H01L29/40 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/32051 ,  H01L29/401 ,  H01L21/02046 ,  H01L21/28556

Abstract: Disclosed herein are systems and methods method for thin film deposition of molybdenum for source/drain formation. A deposition process may be performed in which the surface is contacted in the reaction chamber with a first oxygen-free molybdenum halide reactant at a first temperature, wherein said contacting with the first oxygen-free molybdenum halide reactant forms at least one layer of molybdenum on the substrate. In some embodiments, the temperature of the reaction chamber may be raised from the first temperature to a second temperature. In some embodiments, the substrate in the reaction chamber may be contacted with a second oxygen-free molybdenum halide reactant at the second temperature, wherein said contacting with the second oxygen-free molybdenum halide reactant forms at least one layer of molybdenum on the substrate. In some embodiments, the deposition at the second temperature may be repeated until a molybdenum-containing film of desired thickness is formed.

公开(公告)号：US20220165595A1

公开(公告)日：2022-05-26

申请号：US17670151

申请日：2022-02-11

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Ward Johnson

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/302

Abstract: An apparatus and method for reducing moisture within a wafer handling chamber is disclosed. The moisture reduction results in reduced oxidation of a wafer. The moisture reduction is made possible through use of valves and purging gas. Operation of the valves may result in improved localized purging.

公开(公告)号：US20220149175A1

公开(公告)日：2022-05-12

申请号：US17583371

申请日：2022-01-25

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC: H01L29/49 ,  H01L21/28

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

公开(公告)号：US20210348267A1

公开(公告)日：2021-11-11

申请号：US17316847

申请日：2021-05-11

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Qi Xie ,  Petri Raisanen ,  Dieter Pierreux ,  Bert Jongbloed ,  Werner Knaepen ,  Eric James Shero

IPC: C23C16/02 ,  C23C16/44 ,  C23C16/455

Abstract: A method may comprise disposing vanadium tetrachloride in a delivery vessel; delivering the vanadium tetrachloride to a reaction chamber in fluid communication with the delivery vessel; mitigating the delivery of decomposition products of the vanadium tetrachloride to the reaction chamber; and/or applying the vanadium tetrachloride to a substrate disposed in the reaction chamber to form a layer comprising vanadium on the substrate.

公开(公告)号：US10229833B2

公开(公告)日：2019-03-12

申请号：US15711989

申请日：2017-09-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Eugene Givens

IPC: H01L21/28 ,  C23C16/455 ,  H01L29/49 ,  H01L21/8238 ,  C23C16/34 ,  H01L29/78

Abstract: Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments, methods may include contacting a substrate with a first vapor phase reactant comprising a transition metal precursor and contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor. In some embodiments, related semiconductor device structures may include a PMOS transistor gate structure, the PMOS transistor gate structure including a transition metal nitride film and a gate dielectric between the transition nitride film and a semiconductor body. The transition metal nitride film includes a predominant (200) crystallographic orientation.

公开(公告)号：US10087522B2

公开(公告)日：2018-10-02

申请号：US15135224

申请日：2016-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Eric Shero ,  Suvi Haukka ,  Robert Brennan Milligan ,  Michael Eugene Givens

IPC: C23C16/38 ,  C23C16/455

Abstract: A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.

公开(公告)号：US20180122642A1

公开(公告)日：2018-05-03

申请号：US15711989

申请日：2017-09-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Eugene Givens

IPC: H01L21/28 ,  C23C16/455 ,  H01L21/8238 ,  H01L29/49

CPC classification number: H01L21/28088 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/823828 ,  H01L29/4966 ,  H01L29/78

Abstract: Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments, methods may include contacting a substrate with a first vapor phase reactant comprising a transition metal precursor and contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor. In some embodiments, related semiconductor device structures may include a PMOS transistor gate structure, the PMOS transistor gate structure including a transition metal nitride film and a gate dielectric between the transition nitride film and a semiconductor body. The transition metal nitride film includes a predominant (200) crystallographic orientation.

公开(公告)号：US20170306479A1

公开(公告)日：2017-10-26

申请号：US15135258

申请日：2016-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Eric Shero ,  Suvi Haukka ,  Robert Brennan Milligan ,  Michael Eugene Givens

IPC: C23C16/38 ,  C23C16/455 ,  C23C16/42

CPC classification number: C23C16/38 ,  C23C16/42 ,  C23C16/45525

Abstract: A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a reducing precursor onto the substrate. A reaction between the metal halide precursor and the reducing precursor forms a metal film. Specifically, the method discloses forming a metal boride or a metal silicide film.