公开(公告)号：US20240175137A1

公开(公告)日：2024-05-30

申请号：US18517837

申请日：2023-11-22

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Jan Deckers ,  Theodorus G.M. Oosterlaken

IPC: C23C16/52 ,  C23C16/08 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/08 ,  C23C16/448 ,  C23C16/45561

Abstract: A vapor phase precursor delivery system for delivering a vapor phase precursor for depositing a layer in a vapor phase deposition apparatus is disclosed. The vapor phase precursor delivery system having: a plurality of vessels constructed and arranged to store and vaporize the same precursor; and a gas inlet and a gas outlet operably connected with one or more of the plurality of vessels. A vapor phase deposition apparatus, such as for example a vertical furnace may have such a vapor phase precursor delivery system for depositing a layer on a substrate.

公开(公告)号：US20230096062A1

公开(公告)日：2023-03-30

申请号：US17953566

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Jan Deckers

IPC: H01L21/4763 ,  H01L21/02

Abstract: A method and system for forming material within a gap on a surface of a substrate using metal material are disclosed. An exemplary method includes forming a layer of meltable material overlying the substrate and heating the meltable material to a flow temperature to form molten material that flows within the gap.

公开(公告)号：US20230352300A1

公开(公告)日：2023-11-02

申请号：US18304067

申请日：2023-04-20

Applicant: ASM IP Holding, B.V.

Inventor： Jan Deckers

IPC: C30B25/16 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L21/02 ,  C30B33/12

CPC classification number: H01L21/02507 ,  C30B25/165 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  C30B33/12 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/0262 ,  H01J37/321

Abstract: Methods and systems for forming structures including a superlattice of silicon-containing epitaxial layers using nanoparticles. Exemplary methods can include forming nanoparticles in situ and depositing the nanoparticles onto a substrate surface to thereby form the epitaxial layers.

公开(公告)号：US20240035164A1

公开(公告)日：2024-02-01

申请号：US18359731

申请日：2023-07-26

Applicant: ASM IP Holding, B.V.

Inventor： Jan Deckers ,  Eric James Shero

IPC: C23C16/52 ,  C23C16/448 ,  H01L21/67 ,  C23C16/455 ,  G01N7/18

CPC classification number: C23C16/52 ,  C23C16/4481 ,  H01L21/67253 ,  C23C16/45553 ,  G01N7/18

Abstract: The invention provides in method and systems for determining the amount of solid precursor in a precursor vessel of a semiconductor manufacturing process, wherein the amount of precursor in the precursor vessel is determined by measuring through monochromatic measurements an optical absorption in the process gas flowing from the precursor vessel to the process chamber.

公开(公告)号：US20230324803A1

公开(公告)日：2023-10-12

申请号：US18131279

申请日：2023-04-05

Applicant: ASM IP Holding, B.V.

Inventor： Jan Deckers ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  David Kurt de Roest ,  Kishan Ashokbhai Patel ,  Yoann Tomczak

IPC: G03F7/16 ,  G03F7/075 ,  G03F7/40 ,  G03F7/004

CPC classification number: G03F7/167 ,  G03F7/0757 ,  G03F7/40 ,  G03F7/0042

Abstract: Gas-phase methods of forming radiation-sensitive, patternable material and systems for forming the material. Exemplary methods include gas-phase formation of a layer comprising a polymeric material that forms the radiation-sensitive, patternable material on a surface of the substrate. Portions of the layer comprising the polymeric material can be exposed to radiation or active species to form exposed and unexposed regions. Material can be selectively deposed onto the exposed or unexposed portions and/or one of the exposed and unexposed regions can be selectively removed. One or more method steps can be performed within a reaction chamber and/or a reactor system.