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    SOLID PRECURSOR WEIGHT MONITORING SYSTEM, REACTOR SYSTEM, AND METHODS OF USING SAME
    3.
    发明公开
    SOLID PRECURSOR WEIGHT MONITORING SYSTEM, REACTOR SYSTEM, AND METHODS OF USING SAME 审中-公开

    公开(公告)号：US20240209505A1

    公开(公告)日：2024-06-27

    申请号：US18423969

    申请日：2024-01-26

    Applicant: ASM IP Holding B.V.

    Inventor： William Petro ,  Venkata Motupalli ,  Pawan Sharma ,  Ankit Kimtee ,  Eric James Shero ,  Todd Robert Dunn

    IPC: C23C16/52 ,  C23C16/455

    CPC classification number: C23C16/52 ,  C23C16/45544

    Abstract: A precursor monitoring assembly for use in reactor systems to provide real-time and direct measurements of the availability of source materials from a source vessel. The assembly includes one or more force or load sensors, such as load cells, positioned between a bottom wall of an interior tray and an exterior wall (e.g., a base of a source vessel) and/or outside the source vessel. A signal conditioning element processes the output electrical signals from the sensors, then a controller processes the output signals from the signal conditioning components with a conversion factor, for example, to determine a current weight of source material stored in the source vessel. The controller uses this weight to calculate the amount of available source material or chemistry in the source vessel.

    REACTANT VAPORIZER AND RELATED SYSTEMS AND METHODS
    4.
    发明公开
    REACTANT VAPORIZER AND RELATED SYSTEMS AND METHODS 审中-公开

    公开(公告)号：US20240209501A1

    公开(公告)日：2024-06-27

    申请号：US18596144

    申请日：2024-03-05

    Applicant: ASM IP Holding B.V.

    Inventor： Mohith Verghese ,  Eric James Shero ,  Carl Louis White ,  Kyle Fondurulia ,  Herbert Terhorst

    IPC: C23C16/448 ,  C23C16/455

    CPC classification number: C23C16/4481 ,  C23C16/45544

    Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.

    Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
    6.
    发明授权
    Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus 有权

    公开(公告)号：US11976361B2

    公开(公告)日：2024-05-07

    申请号：US17714383

    申请日：2022-04-06

    Applicant: ASM IP Holding B.V.

    Inventor： Eric James Shero ,  Robert Brennan Milligan ,  William George Petro ,  Eric Wang ,  Fred Alokozai ,  Dong Li ,  Hao Wang ,  Melvin Verbaas ,  Luping Li

    IPC: C23C16/455 ,  C23C16/34 ,  C23C16/44 ,  C23C16/46 ,  C23C16/52

    CPC classification number: C23C16/45565 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/52

    Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

    Solid source precursor vessel
    8.
    发明授权
    Solid source precursor vessel 有权

    公开(公告)号：US11959168B2

    公开(公告)日：2024-04-16

    申请号：US17239768

    申请日：2021-04-26

    Applicant: ASM IP Holding B.V.

    Inventor： Jianqiu Huang ,  Ankit Kimtee ,  Sudhanshu Biyani ,  Jonathan Robert Bakke ,  Eric James Shero

    IPC: C23C16/455 ,  C23C16/44 ,  C23C16/448 ,  C23C16/50

    CPC classification number: C23C16/448 ,  C23C16/44 ,  C23C16/4408 ,  C23C16/45525 ,  C23C16/50

    Abstract: The present disclosure is generally directed to a solid source precursor delivery system. More specifically, the present disclosure is directed to a solid source precursor vessel that can be utilized to vaporize a supply of solid precursor stored within the vessel. The disclosed source vessel utilizes a plurality of individual cavities or pockets within the interior of the vessel. Each individual pocket may be loaded with precursor. In an arrangement, the pockets may be loaded with pre-formed blocks of compressed precursor material that typically have a higher density than was previously achieved when packing solid precursor within a source vessel. The increased density of the solid precursor material increases a capacity of the source vessel resulting in longer intervals between replacement and/or refilling the source vessel.

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