公开(公告)号：US12094769B2

公开(公告)日：2024-09-17

申请号：US17530691

申请日：2021-11-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore ,  Jia Li Yao ,  René Henricus Jozef Vervuurt

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/768

CPC classification number: H01L21/76837 ,  H01J37/3244 ,  H01L21/02126 ,  H01L21/3065 ,  H01L21/76877

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a first plasma treatment and subjecting the substrate to a second plasma treatment. Thus the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a material on the lower surface.

公开(公告)号：US20240203727A1

公开(公告)日：2024-06-20

申请号：US18537984

申请日：2023-12-13

Applicant: ASM IP Holding B.V.

Inventor： Tao Xu ,  Viljami Pore

IPC: H01L21/02 ,  C23C16/36 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/32449 ,  H01L21/02274 ,  H01J2237/3321

Abstract: The disclosure relates to methods of depositing a material including silicon, carbon and nitrogen on a substrate. The methods include providing the substrate in a reaction chamber, providing a material precursor into the reaction chamber in a vapor phase and providing active species generated from plasma into the reaction chamber to form a material including silicon, carbon and nitrogen on the substrate. In the disclosure, the material precursor includes a silicon-containing azole. The disclosure further relates to processing assemblies for the manufacture of semiconductor devices.

公开(公告)号：US20230126231A1

公开(公告)日：2023-04-27

申请号：US18084789

申请日：2022-12-20

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Zecheng Liu

IPC: H01L21/762 ,  H01L21/67 ,  H01J37/32 ,  H01L29/06

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, introducing a second reactant to the substrate with a second dose, wherein the first and the second doses overlap in an overlap area where the first and second reactants react and leave an initially substantially unreacted area where the first and the second areas do not overlap; introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant to form deposited material; and etching the deposited material. An apparatus for filling a recess is also disclosed.

公开(公告)号：US20230098575A1

公开(公告)日：2023-03-30

申请号：US17953769

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/513

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20230093384A1

公开(公告)日：2023-03-23

申请号：US18056025

申请日：2022-11-16

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/30 ,  H01L21/02 ,  H01L45/00 ,  C23C16/18 ,  C23C16/44

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US20220270917A1

公开(公告)日：2022-08-25

申请号：US17741562

申请日：2022-05-11

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore

IPC: H01L21/762 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber; introducing a first reactant, to form first active species, for a first pulse time to the substrate; introducing a second reactant for a second pulse time to the substrate; and introducing a third reactant, to form second active species, for a third pulse time to the substrate. An apparatus for filling a recess is also disclosed and a structure formed using the method and/or apparatus is disclosed.

公开(公告)号：US20220235460A1

公开(公告)日：2022-07-28

申请号：US17580832

申请日：2022-01-21

Applicant: ASM IP Holding B.V.

Inventor： Marko Tuominen ,  Viljami Pore

IPC: C23C16/458 ,  C23C16/509 ,  C23C16/517 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56

Abstract: Systems for depositing materials and related methods are described. The systems allow condensing or depositing a precursor on a substrate, and then curing condensed or deposited precursor to form a layer.

公开(公告)号：US20220165615A1

公开(公告)日：2022-05-26

申请号：US17530691

申请日：2021-11-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore ,  Jia Li Yao ,  René Henricus Jozef Vervuurt

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3065 ,  H01J37/32

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a first plasma treatment and subjecting the substrate to a second plasma treatment. Thus the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a material on the lower surface.

公开(公告)号：US11289327B2

公开(公告)日：2022-03-29

申请号：US16574542

申请日：2019-09-18

Applicant: ASM IP HOLDING B.V.

Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  H01L29/66

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

公开(公告)号：US11227789B2

公开(公告)日：2022-01-18

申请号：US16792571

申请日：2020-02-17

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Zecheng Liu

IPC: H01L21/762 ,  H01L29/06 ,  H01L21/67 ,  H01J37/32

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, introducing a second reactant to the substrate with a second dose, wherein the first and the second doses overlap in an overlap area where the first and second reactants react and leave an initially substantially unreacted area where the first and the second areas do not overlap; introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant to form deposited material; and etching the deposited material. An apparatus for filling a recess is also disclosed.