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    DETERMINING ROUNDED CONTOURS FOR LITHOGRAPHY RELATED PATTERNS
    2.
    发明公开
    DETERMINING ROUNDED CONTOURS FOR LITHOGRAPHY RELATED PATTERNS 审中-公开

    公开(公告)号：US20240272543A1

    公开(公告)日：2024-08-15

    申请号：US18565889

    申请日：2022-05-27

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Wen LYU ,  Mir Farrokh SHAYEGAN SALEK ,  Xiaobo XIE ,  Jen-Shiang WANG

    IPC: G03F1/36 ,  G03F7/00

    CPC classification number: G03F1/36 ,  G03F7/70441 ,  G03F7/705

    Abstract: A methods and systems for determining rounded contours of target contours or other lithography related contour for mask design. The method includes converting a contour representation to (i) a first set of contour point locations in a first dimension (e.g., x) and (ii) a second set of contour point locations in a second dimension (e.g., y). A signal function is determined based on the first and second sets of contour point locations, the signal function indicative of different segments of the contour representation. The first set of contour point locations is updated based on a first filter function and the signal function, and the second set of contour point locations is updated based on a second filter function and the signal function. Based on the updated contour point locations, a rounded contour of the contour representation is generated.

    METHOD FOR CONVERTING METROLOGY DATA
    4.
    发明申请
    METHOD FOR CONVERTING METROLOGY DATA 有权

    公开(公告)号：US20240377343A1

    公开(公告)日：2024-11-14

    申请号：US18684558

    申请日：2022-08-22

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Yunbo GUO ,  Zhu WANG ,  Feng YANG ,  Qian ZHAO ,  Mu FENG ,  Jen-Shiang WANG

    IPC: G01N23/2251 ,  G06N3/045 ,  G06N3/0475 ,  G06N3/094

    Abstract: Described herein is a metrology system and a method for converting metrology data via a trained machine learning (ML) model. The method includes accessing a first (MD1) SEM data set (e.g., images, contours, etc.) acquired by a first scanning electron metrology (SEM) system (TS1) and a second (MD2) SEM data set acquired by a second SEM system (TS2), where the first SEM data set and the second SEM data set being associated with a patterned substrate. Using the first SEM data set and the second SEM data set as training data, a machine learning (ML) model is trained (P303) such that the trained ML model is configured to convert (P307) a metrology data set (310) acquired (P305) by the second SEM system to a converted data set (311) having characteristics comparable to metrology data being acquired by the first SEM system. Furthermore, measurements may be determined based on the converted SEM data.

    METHOD FOR DETERMINING STOCHASTIC VARIATION OF PRINTED PATTERNS
    9.
    发明申请
    METHOD FOR DETERMINING STOCHASTIC VARIATION OF PRINTED PATTERNS 有权

    公开(公告)号：US20220137514A1

    公开(公告)日：2022-05-05

    申请号：US17430517

    申请日：2020-01-30

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Chang An WANG ,  Alvin Jianjiang WANG ,  Jiao LIANG ,  Jen-Shiang WANG

    IPC: G03F7/20

    Abstract: A method for determining measurement data of a printed pattern on a substrate. The method involves obtaining (i) images of the substrate including a printed pattern corresponding to a reference pattern, (ii) an averaged image of the images, and (iii) a composite contour based on the averaged image. Further, the composite contour is aligned with respect to a reference contour of the reference pattern and contours are extracted from the images based on both the aligned composite contour and the output of die-to-database alignment of the composite contour. Further, the method determines a plurality of pattern measurements based on the contours and the measurement data corresponding to the printed patterns based on the plurality of the pattern measurements. Further, the method determines a one or more process variations such as stochastic variation, inter-die variation, intra-die variation and/or total variation.

    ETCH BIAS CHARACTERIZATION AND METHOD OF USING THE SAME
    10.
    发明申请
    ETCH BIAS CHARACTERIZATION AND METHOD OF USING THE SAME 审中-公开

    公开(公告)号：US20190354020A1

    公开(公告)日：2019-11-21

    申请号：US16484582

    申请日：2018-02-21

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Yongfa FAN ,  Leiwu ZHENG ,  Mu FENG ,  Qian ZHAO ,  Jen-Shiang WANG

    IPC: G03F7/20 ,  H01L21/66 ,  G03F1/80

    Abstract: A method involving determining an etch bias for a pattern to be etched using an etch step of a patterning process based on an etch bias model, the etch bias model including a formula having a variable associated with a spatial property of the pattern or with an etch plasma species concentration of the etch step, and including a mathematical term including a natural exponential function to the power of a parameter that is fitted or based on an etch time of the etch step; and adjusting the patterning process based on the determined etch bias.

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