Hierarchical data storage system
    2.
    发明授权
    Hierarchical data storage system 有权
    分层数据存储系统

    公开(公告)号:US09405705B2

    公开(公告)日:2016-08-02

    申请号:US14548664

    申请日:2014-11-20

    Applicant: Apple Inc.

    Abstract: A data storage system includes a plurality of non-volatile memory devices arranged in one or more sets, a main controller and one or more processors. The main controller is configured to accept commands from a host and to convert the commands into recipes. Each recipe includes a list of multiple memory operations to be performed sequentially in the non-volatile memory devices belonging to one of the sets. Each of the processors is associated with a respective set of the non-volatile memory devices, and is configured to receive one or more of the recipes from the main controller and to execute the memory operations specified in the received recipes in the non-volatile memory devices belonging to the respective set.

    Abstract translation: 数据存储系统包括以一个或多个集合排列的多个非易失性存储器件,主控制器和一个或多个处理器。 主控制器配置为接受来自主机的命令,并将命令转换为配方。 每个配方包括要在属于其中一个组的非易失性存储器件中顺序执行的多个存储器操作的列表。 每个处理器与相应的一组非易失性存储器设备相关联,并且被配置为从主控制器接收一个或多个配方并且执行在非易失性存储器中接收的配方中指定的存储器操作 属于相应集合的设备。

    Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
    3.
    发明授权
    Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N 有权
    在N位/单元模拟存储单元器件中以M位/单元密度存储,M> N

    公开(公告)号:US08964466B2

    公开(公告)日:2015-02-24

    申请号:US14264303

    申请日:2014-04-29

    Applicant: Apple Inc.

    Abstract: A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.

    Abstract translation: 一种用于数据存储的方法包括接收用于存储在包括多个模拟存储器单元的存储器中的数据,并且支持一组内置的编程命令。 每个编程命令在存储器单元的子集中编写从一组N页中选择的相应页面。 存储器单元的子集被编程为通过执行仅从集合中绘制的编程命令的序列来存储数据的M页M> N。

    Memory device with internal signal processing unit
    4.
    发明授权
    Memory device with internal signal processing unit 有权
    内存信号处理单元

    公开(公告)号:US08788906B2

    公开(公告)日:2014-07-22

    申请号:US13860211

    申请日:2013-04-10

    Applicant: Apple Inc.

    Abstract: A method for operating a memory includes storing data in a plurality of analog memory cells that are fabricated on a first semiconductor die by writing input storage values to a group of the analog memory cells. After storing the data, multiple output storage values are read from each of the analog memory cells in the group using respective, different threshold sets of read thresholds, thus providing multiple output sets of the output storage values corresponding respectively to the threshold sets. The multiple output sets of the output storage values are preprocessed by circuitry that is fabricated on the first semiconductor die, to produce preprocessed data. The preprocessed data is provided to a memory controller, which is fabricated on a second semiconductor die that is different from the first semiconductor die. so as to enable the memory controller to reconstruct the data responsively to the preprocessed data.

    Abstract translation: 一种用于操作存储器的方法包括:通过将输入存储值写入到一组模拟存储器单元中,将数据存储在制造在第一半导体管芯上的多个模拟存储器单元中。 在存储数据之后,使用相应的不同的阈值集合读取组中每个模拟存储器单元的多个输出存储值,从而提供分别对应于阈值集合的输出存储值的多个输出组。 输出存储值的多个输出组由在第一半导体管芯上制造的电路预处理,以产生预处理的数据。 预处理数据被提供给存储器控制器,该存储器控制器制造在与第一半导体管芯不同的第二半导体管芯上。 以使得存储器控制器能够响应于预处理的数据重构数据。

    SELECTIVE ACTIVATION OF PROGRAMMING SCHEMES IN ANALOG MEMORY CELL ARRAYS
    5.
    发明申请
    SELECTIVE ACTIVATION OF PROGRAMMING SCHEMES IN ANALOG MEMORY CELL ARRAYS 审中-公开
    模拟记忆体阵列中编程方案的选择性激活

    公开(公告)号:US20140201433A1

    公开(公告)日:2014-07-17

    申请号:US14215208

    申请日:2014-03-17

    Applicant: Apple Inc.

    CPC classification number: G11C27/005 G11C7/02 G11C11/5628 G11C16/3418

    Abstract: A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme.

    Abstract translation: 一种用于数据存储的方法包括:定义第一编程方案,其编程一组模拟存储器单元,同时减少由与该组相邻的至少一个存储器单元引起的干扰;以及第二编程方案,其对该组模拟存储器单元进行编程 不能减少第一编程方案减少的所有干扰。 基于针对模拟存储器单元定义的标准来选择第一和第二编程方案之一。 使用所选择的编程方案将数据存储在模拟存储器单元的组中。

    Programming Schemes for Multi-Level Analog Memory Cells
    6.
    发明申请
    Programming Schemes for Multi-Level Analog Memory Cells 审中-公开
    多级模拟存储单元的编程方案

    公开(公告)号:US20160372184A1

    公开(公告)日:2016-12-22

    申请号:US15256992

    申请日:2016-09-06

    Applicant: Apple Inc.

    Abstract: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

    Abstract translation: 一种用于数据存储的方法包括:通过对存储器单元进行编程来采用各自的第一编程级别,来将第一数据位在第一时间存储在一组多位模拟存储单元中。 第二数据位通过对存储器单元进行编程以采取依赖于第一编程电平和第二数据位的相应的第二编程电平而在比第一时间晚的第二时间存储在存储单元组中。 响应于第一次和第二次之间的差异选择存储策略。 将存储策略应用于从第一数据位和第二数据位中选择的至少一组数据位。

    Programming schemes for multi-level analog memory cells
    7.
    发明授权
    Programming schemes for multi-level analog memory cells 有权
    多级模拟存储单元的编程方案

    公开(公告)号:US09449705B2

    公开(公告)日:2016-09-20

    申请号:US14173965

    申请日:2014-02-06

    Applicant: Apple Inc.

    Abstract: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

    Abstract translation: 一种用于数据存储的方法包括:通过对存储器单元进行编程来采用各自的第一编程级别,来将第一数据位在第一时间存储在一组多位模拟存储单元中。 第二数据位通过对存储器单元进行编程以采取依赖于第一编程电平和第二数据位的相应的第二编程电平而在比第一时间晚的第二时间存储在存储单元组中。 响应于第一次和第二次之间的差异选择存储策略。 将存储策略应用于从第一数据位和第二数据位中选择的至少一组数据位。

    Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
    9.
    发明授权
    Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N 有权
    在N位/单元模拟存储单元器件中以M位/单元密度存储,M> N

    公开(公告)号:US08750046B2

    公开(公告)日:2014-06-10

    申请号:US14041219

    申请日:2013-09-30

    Applicant: Apple Inc.

    Abstract: A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.

    Abstract translation: 一种用于数据存储的方法包括接收用于存储在包括多个模拟存储器单元的存储器中的数据,并且支持一组内置的编程命令。 每个编程命令在存储器单元的子集中编写从一组N页中选择的相应页面。 存储器单元的子集被编程为通过执行仅从集合中绘制的编程命令的序列来存储数据的M页M> N。

    Programming Schemes for Multi-Level Analog Memory Cells
    10.
    发明申请
    Programming Schemes for Multi-Level Analog Memory Cells 审中-公开
    多级模拟存储单元的编程方案

    公开(公告)号:US20140157090A1

    公开(公告)日:2014-06-05

    申请号:US14173965

    申请日:2014-02-06

    Applicant: Apple Inc.

    Abstract: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

    Abstract translation: 一种用于数据存储的方法包括:通过对存储器单元进行编程来采用各自的第一编程级别,来将第一数据位在第一时间存储在一组多位模拟存储单元中。 第二数据位通过对存储器单元进行编程以采取依赖于第一编程电平和第二数据位的相应的第二编程电平而在比第一时间晚的第二时间存储在存储单元组中。 响应于第一次和第二次之间的差异选择存储策略。 将存储策略应用于从第一数据位和第二数据位中选择的至少一组数据位。

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