COOLED GAS FEED BLOCK WITH BAFFLE AND NOZZLE FOR HDP-CVD

    公开(公告)号:US20170191161A1

    公开(公告)日:2017-07-06

    申请号:US15141443

    申请日:2016-04-28

    Abstract: Techniques are disclosed for methods and apparatuses for reducing particle contamination formation in a high temperature processing chamber with a cooled gas feed block. The cooled gas feed has a body. The body has a main center portion having a top surface and a bottom surface. The body also has a flange extending outward from the bottom surface of the main center portion. A gas channel is disposed through the body. The gas channel has an inlet formed in the top surface of the main center portion and an outlet formed in the bottom surface of the main center portion. The body also has a center coolant channel. The center coolant channel has a first portion having an inlet formed in the top surface of the main center portion, and a second portion coupled to the first portion, the second portion having an outlet formed a sidewall of the flange.

    ARCING DETECTION APPARATUS FOR PLASMA PROCESSING

    公开(公告)号:US20170162370A1

    公开(公告)日:2017-06-08

    申请号:US15348579

    申请日:2016-11-10

    CPC classification number: H01J37/32944 H01J37/32082 H01J37/32715

    Abstract: Embodiments described herein generally relate to a plasma processing chamber and a detection apparatus for arcing events. In one embodiment, an arcing detection apparatus is disclosed herein. The arcing detection apparatus comprises a probe, a detection circuit, and a data log system. The probe positioned partially exposed to an interior volume of a plasma processing chamber. The detection circuit is configured to receive an analog signal from the probe and output an output signal scaling events present in the analog signal. The data log system is communicatively coupled to receive the output signal from the detection circuit. The data log system is configured to track arcing events occurring in the interior volume.

    DIAMOND-LIKE CARBON COATINGS FOR SUBSTRATE CARRIERS
    7.
    发明申请
    DIAMOND-LIKE CARBON COATINGS FOR SUBSTRATE CARRIERS 审中-公开
    类似钻石的碳纳米管涂层

    公开(公告)号:US20150333213A1

    公开(公告)日:2015-11-19

    申请号:US14698395

    申请日:2015-04-28

    Abstract: A substrate carrier having a diamond-like carbon coating disposed thereon is provided. The diamond-like carbon coating may have the property of being substantially resistant to commonly used cleaning processes performed during the fabrication of photovoltaic cells, such as cleaning processes using an NF3 plasma. Additionally, a method of forming a diamond-like carbon coating on a substrate carrier is provided. The method includes positioning a substrate carrier in a processing chamber and forming a diamond-like carbon coating thereon. Forming the diamond-like carbon coating includes flowing a carbon-containing gas into a processing chamber and dissociating the carbon-containing gas. Furthermore, a method of quick removal of diamond-like carbon coatings from processing chamber walls, processing chamber components, substrate carriers, and other objects is provided.

    Abstract translation: 提供了其上设置有类金刚石碳涂层的基板载体。 类金刚石碳涂层可具有基本上抵抗在光伏电池制造期间所执行的常用清洁工艺的性质,例如使用NF 3等离子体的清洁工艺。 另外,提供了在基板载体上形成类金刚石碳涂层的方法。 该方法包括将衬底载体定位在处理室中并在其上形成类金刚石碳涂层。 形成类金刚石碳涂层包括使含碳气体流入处理室并解离含碳气体。 此外,提供了从处理室壁,处理室部件,基板载体和其它物体中快速去除类金刚石碳涂层的方法。

    IN SITU SILICON SURFACE PRE-CLEAN FOR HIGH PERFORMANCE PASSIVATION OF SILICON SOLAR CELLS
    8.
    发明申请
    IN SITU SILICON SURFACE PRE-CLEAN FOR HIGH PERFORMANCE PASSIVATION OF SILICON SOLAR CELLS 审中-公开
    用于高性能钝化硅太阳能电池的现场硅表面预清洁

    公开(公告)号:US20140213016A1

    公开(公告)日:2014-07-31

    申请号:US14160171

    申请日:2014-01-21

    Abstract: Embodiments of the invention generally relate to methods for fabricating photovoltaic devices, and more particularly to methods for in-situ cleaning of a solar cell substrates. In one embodiment, a method of manufacturing a solar cell device is provided. The method comprises exposing a single or poly crystalline silicon substrate to a wet clean process to clean the surfaces of the crystalline substrate, loading the crystalline silicon substrate into a processing system having a vacuum environment, exposing at least one surface of the crystalline silicon substrate to an in-situ cleaning process in the vacuum environment of the processing system, and forming one or more passivation layers on at least one surface of the crystalline silicon substrate in the processing system.

    Abstract translation: 本发明的实施例一般涉及用于制造光伏器件的方法,更具体地涉及太阳能电池基板的原位清洁方法。 在一个实施例中,提供了一种制造太阳能电池装置的方法。 该方法包括将单晶或多晶硅衬底暴露于湿清洁工艺以清洁晶体衬底的表面,将晶体硅衬底装载到具有真空环境的处理系统中,将晶体硅衬底的至少一个表面暴露于 在处理系统的真空环境中的原位清洁工艺,以及在处理系统中在晶体硅衬底的至少一个表面上形成一个或多个钝化层。

    ADVANCED COATING METHOD AND MATERIALS TO PREVENT HDP-CVD CHAMBER ARCING

    公开(公告)号:US20190169743A1

    公开(公告)日:2019-06-06

    申请号:US16268194

    申请日:2019-02-05

    Abstract: Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.

Patent Agency Ranking