公开(公告)号：US20170114462A1

公开(公告)日：2017-04-27

申请号：US15290029

申请日：2016-10-11

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Xuesong LU ,  Andrew V. LE ,  Zheng YUAN ,  Jang Seok OH ,  Joseph Jamil FARAH ,  Rongping WANG

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/458 ,  H01L21/67

CPC classification number: C23C16/45565 ,  C23C16/458 ,  C23C16/50 ,  C23C16/5096 ,  H01J37/32899 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201

Abstract: Embodiments of the present disclosure generally relate to a cluster tool for processing semiconductor substrates. In one embodiment, a cluster tool includes a plurality of process chambers connected to a transfer chamber and each process chamber may simultaneously process four or more substrates. In order to reduce cost, each process chamber includes a substrate support for supporting four or more substrates, single showerhead disposed over the substrate support, and a single radio frequency power source electrically coupled to the showerhead. The showerhead may include a first surface facing the substrate support and a second surface opposite the first surface. A plurality of gas passages may be formed in the showerhead extending from the first surface to the second surface. Process uniformity is improved by increasing the density of the gas passages from the center of the showerhead to the edge of the showerhead.

公开(公告)号：US20170159176A1

公开(公告)日：2017-06-08

申请号：US15334431

申请日：2016-10-26

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Xuesong LU ,  Andrew V. LE ,  Jang Seok OH

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/505

CPC classification number: C23C16/4558 ,  C23C16/34 ,  C23C16/403 ,  C23C16/4404 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/505 ,  C23C16/507 ,  H01J37/3244 ,  H01J37/32449

Abstract: Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.

公开(公告)号：US20210233765A1

公开(公告)日：2021-07-29

申请号：US17153450

申请日：2021-01-20

Applicant: Applied Materials, Inc.

Inventor： Naomi YOSHIDA ,  He REN ,  Hao JIANG ,  Chenfei SHEN ,  Chi-Chou LIN ,  Hao CHEN ,  Xuesong LU ,  Mehul B. NAIK

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/3205 ,  H01L29/66 ,  B08B5/02

Abstract: Embodiments of the present disclosure generally relate to methods of cleaning a structure and methods of depositing a capping layer in a structure. The method of cleaning a structure includes suppling a cleaning gas, including a first gas including nitrogen (N) and a second gas including fluorine (F), to a bottom surface of a structure. The cleaning gas removes unwanted metal oxide and etch residue from the bottom surface of the structure. The method of depositing a capping layer includes depositing the capping layer over the bottom surface of the structure. The methods described herein reduce the amount of unwanted metal oxides and residue, which improves adhesion of deposited capping layers.

公开(公告)号：US20190323960A1

公开(公告)日：2019-10-24

申请号：US16455689

申请日：2019-06-27

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Xuesong LU ,  Andrew V. LE ,  Fa JI ,  Jang Seok OH ,  Patrick L. SMITH ,  Shawyon JAFARI ,  Ralph Peter ANTONIO

IPC: G01N21/53 ,  H01L21/67 ,  H01L21/677 ,  G01N1/22

Abstract: An FI having an in-situ particle detector and a method for particle detection therein are provided. In one aspect, the FI includes a fan, a substrate support, a particle detector, and an exhaust outlet. The fan, substrate support, and particle detector are arranged such that, in operation, the fan directs air towards the exhaust outlet and over a substrate on the substrate support to create laminar flow. The particle detector, positioned downstream from the substrate support and upstream from the exhaust outlet, analyzes the air and detects particle concentration before the particles are exhausted. The collected particle detection data may be combined with data from other sensors in the FI and used to identify the source of particle contamination. The particle detector may also be incorporated into other system components, including but not limited to, a load-lock or buffer chamber to detect particle concentration therein.

公开(公告)号：US20190221458A1

公开(公告)日：2019-07-18

申请号：US16247026

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Xuesong LU ,  Lin ZHANG ,  Joseph C. WERNER ,  Jang Seok OH ,  Balaji PASUPATHY ,  Michael W. JOHNSON

IPC: H01L21/67 ,  H01J37/32 ,  G01K3/10 ,  G01K3/00 ,  C23C16/50 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01L21/67248 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  G01K3/005 ,  G01K3/10 ,  H01J37/3244 ,  H01J37/32899 ,  H01J2237/24585 ,  H01J2237/3321 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/67207

Abstract: Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method of monitoring a processing system includes receiving, through a data acquisition device, temperature information from one or more temperature sensors and receiving context information from a system controller coupled to a processing system comprising the processing chamber. Here, the one or more temperature sensors are disposed in one or more locations external to a processing volume of a processing chamber. The context information relates to instructions executed by the system controller to control one or more operations of the processing system.

公开(公告)号：US20180156727A1

公开(公告)日：2018-06-07

申请号：US15793458

申请日：2017-10-25

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Xuesong LU ,  Andrew V. LE ,  Fa JI ,  Jang Seok OH ,  Patrick L. SMITH ,  Shawyon JAFARI ,  Ralph Peter ANTONIO

IPC: G01N21/53 ,  G01N15/02

CPC classification number: G01N21/53 ,  G01N1/22 ,  G01N1/2247 ,  G01N15/0205 ,  G01N2015/0046 ,  G01N2015/0693 ,  H01L21/67017 ,  H01L21/67253 ,  H01L21/67778

Abstract: An FI having an in-situ particle detector and a method for particle detection therein are provided. In one aspect, the FI includes a fan, a substrate support, a particle detector, and an exhaust outlet. The fan, substrate support, and particle detector are arranged such that, in operation, the fan directs air towards the exhaust outlet and over a substrate on the substrate support to create laminar flow. The particle detector, positioned downstream from the substrate support and upstream from the exhaust outlet, analyzes the air and detects particle concentration before the particles are exhausted. The collected particle detection data may be combined with data from other sensors in the FI and used to identify the source of particle contamination. The particle detector may also be incorporated into other system components, including but not limited to, a load-lock or buffer chamber to detect particle concentration therein.

公开(公告)号：US20190169743A1

公开(公告)日：2019-06-06

申请号：US16268194

申请日：2019-02-05

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Xuesong LU ,  Andrew V. LE ,  Jang Seok OH

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/507 ,  C23C16/44 ,  C23C16/34 ,  C23C16/505 ,  C23C16/40

Abstract: Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.

公开(公告)号：US20170323768A1

公开(公告)日：2017-11-09

申请号：US15145750

申请日：2016-05-03

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Xuesong LU ,  Andrew V. LE ,  Jang Seok OH ,  Xinhai HAN

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32862 ,  H01J2237/334 ,  H01J2237/335

Abstract: Embodiments of the disclosure include methods for in-situ chamber cleaning efficiency enhancement process for a plasma processing chamber utilized for a semiconductor substrate fabrication process. In one embodiment, a method for performing a plasma treatment process after cleaning a plasma process includes performing a cleaning process in a plasma processing chamber in absent of a substrate disposed thereon, subsequently supplying a plasma treatment gas mixture including at least a hydrogen containing gas and/or an oxygen containing gas into the plasma processing chamber, applying a RF source power to the processing chamber to form a plasma from the plasma treatment gas mixture, and plasma treating an interior surface of the processing chamber.

公开(公告)号：US20170098565A1

公开(公告)日：2017-04-06

申请号：US14875673

申请日：2015-10-05

Applicant: Applied Materials, Inc.

Inventor： Xuesong LU ,  Lin ZHANG ,  Andy LE

IPC: H01L21/67 ,  H01J37/32 ,  G05B19/418 ,  C23C16/52

CPC classification number: H01L21/67253 ,  C23C16/50 ,  C23C16/52 ,  G05B19/41875 ,  G05B19/4189 ,  G05B2219/37008 ,  G05B2219/45032 ,  G05B2219/50388 ,  H01J37/32091 ,  H01J37/3211 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  Y02P90/14 ,  Y02P90/22

Abstract: Embodiments of the present disclosure provide methodology to match and calibrate processing chamber performance in a processing chamber. In one embodiment, a method for calibrating a processing chamber for semiconductor manufacturing process includes performing a first predetermined process in a processing chamber, collecting a first set of signals transmitted from a first group of sensors disposed in the processing chamber to a controller while performing the predetermined process, analyzing the collected first set of signals, comparing the collected first set of signals with database stored in the controller to check sensor responses from the first group of sensors, calibrating sensors based on the collected first set of signals when a mismatch sensor response is found, subsequently performing a first series of processes in the processing chamber, and collecting a second set of signals transmitted from the sensors to the controller while performing the series of processes.