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    Method of enhancing etching selectivity using a pulsed plasma
    1.
    发明授权
    Method of enhancing etching selectivity using a pulsed plasma 有权

    公开(公告)号：US11495470B1

    公开(公告)日：2022-11-08

    申请号：US17244873

    申请日：2021-04-29

    Applicant: Applied Materials, Inc.

    Inventor： Hailong Zhou ,  Sean Kang ,  Kenji Takeshita ,  Rajinder Dhindsa ,  Taehwan Lee ,  Iljo Kwak

    IPC: H01L21/311

    Abstract: Embodiments of this disclosure include a method of processing a substrate that includes etching a first dielectric material formed on a substrate that is disposed on a substrate supporting surface of a substrate support assembly disposed within a processing region of a plasma processing chamber. The etching process may include delivering a process gas to the processing region, wherein the process gas comprises a first fluorocarbon containing gas and a first process gas, delivering, by use of a radio frequency generator, a radio frequency signal to a first electrode to form a plasma in the processing region, and establishing, by use of a first pulsed-voltage waveform generator, a first pulsed voltage waveform at a biasing electrode disposed within the substrate support assembly. The first pulsed voltage waveform comprises a series of repeating pulsed waveform cycles that each include a first portion that occurs during a first time interval, a second portion that occurs during a second time interval, and a peak-to-peak voltage. The pulsed voltage waveform is substantially constant during at least a portion of the second time interval.

    Atomic layer etching processes
    2.
    发明授权
    Atomic layer etching processes 有权

    公开(公告)号：US10424487B2

    公开(公告)日：2019-09-24

    申请号：US15792252

    申请日：2017-10-24

    Applicant: Applied Materials, Inc.

    Inventor： Jungmin Ko ,  Tom Choi ,  Junghoon Kim ,  Sean Kang ,  Mang-Mang Ling

    IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/311

    Abstract: Processing methods may be performed to remove unwanted materials from a substrate. The methods may include forming a remote plasma of an inert precursor in a remote plasma region of a processing chamber. The methods may include forming a bias plasma of the inert precursor within a processing region of the processing chamber. The methods may include modifying a surface of an exposed material on a semiconductor substrate within the processing region of the processing chamber with plasma effluents of the inert precursor. The methods may include extinguishing the bias plasma while maintaining the remote plasma. The methods may include adding an etchant precursor to the remote plasma region to produce etchant plasma effluents. The methods may include flowing the etchant plasma effluents to the processing region of the processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.

    Poly directional etch by oxidation
    4.
    发明授权
    Poly directional etch by oxidation 有权

    公开(公告)号：US10062575B2

    公开(公告)日：2018-08-28

    申请号：US15260755

    申请日：2016-09-09

    Applicant: Applied Materials, Inc.

    Inventor： Tom Choi ,  Jungmin Ko ,  Sean Kang

    IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/02

    CPC classification number: H01L21/3065 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/31116 ,  H01L21/32105 ,  H01L21/32137

    Abstract: Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon from the semiconductor substrate.

    AIRGAP FORMATION WITH DAMAGE-FREE COPPER
    5.
    发明申请
    AIRGAP FORMATION WITH DAMAGE-FREE COPPER 审中-公开

    公开(公告)号：US20180138075A1

    公开(公告)日：2018-05-17

    申请号：US15350713

    申请日：2016-11-14

    Applicant: Applied Materials, Inc.

    Inventor： Sean Kang ,  Jungmin Ko ,  Oliver Luere

    IPC: H01L21/768 ,  H01L21/311

    CPC classification number: H01L21/7682 ,  H01L21/31116 ,  H01L21/76822 ,  H01L23/53228

    Abstract: Processing methods may be performed to remove unwanted materials from a substrate, such as an oxide footing. The methods may include forming an inert plasma within a processing region of a processing chamber. Effluents of the inert plasma may be utilized to modify a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor chamber. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.

    POLY DIRECTIONAL ETCH BY OXIDATION
    6.
    发明申请
    POLY DIRECTIONAL ETCH BY OXIDATION 审中-公开

    公开(公告)号：US20180076044A1

    公开(公告)日：2018-03-15

    申请号：US15260755

    申请日：2016-09-09

    Applicant: Applied Materials, Inc.

    Inventor： Tom Choi ,  Jungmin Ko ,  Sean Kang

    IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/02

    CPC classification number: H01L21/3065 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/31116 ,  H01L21/32105 ,  H01L21/32137

    Abstract: Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon from the semiconductor substrate.

    Methods for controlling Fin recess loading
    7.
    发明授权
    Methods for controlling Fin recess loading 有权
    控制翅片凹槽加载的方法

    公开(公告)号：US09520302B2

    公开(公告)日：2016-12-13

    申请号：US14934547

    申请日：2015-11-06

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Jungmin Ko ,  Sean Kang ,  Kwang-Soo Kim ,  Olivier Luere

    IPC: H01L21/311

    CPC classification number: H01L21/31116

    Abstract: A method of processing a substrate includes depositing an oxide material on a substrate having a first region, a second region and a plurality of features, wherein the first region has a high feature density and the second region has a low feature density; and controlling a ratio of an etch rate of the oxide material in the first region to an etch rate of the oxide material in the second region by forming an ammonium hexafluorosilicate ((NH4)2SiF6) layer having a first thickness atop the oxide material in the first region and having a second thickness atop the oxide material in the second region.

    Abstract translation: 一种处理衬底的方法包括在具有第一区域，第二区域和多个特征的衬底上沉积氧化物材料，其中第一区域具有高特征密度，第二区域具有低特征密度; 以及通过在所述第二区域中形成具有在所述氧化物材料的顶部的第一厚度的六氟硅酸铵（（NH 4）2 SiF 6））来控制所述第一区域中的氧化物材料的蚀刻速率与所述氧化物材料的蚀刻速率的比率 并且在第二区域中具有位于氧化物材料上方的第二厚度。

    Airgap formation with damage-free copper
    9.
    发明授权
    Airgap formation with damage-free copper 有权

    公开(公告)号：US10242908B2

    公开(公告)日：2019-03-26

    申请号：US15350713

    申请日：2016-11-14

    Applicant: Applied Materials, Inc.

    Inventor： Sean Kang ,  Jungmin Ko ,  Oliver Luere

    IPC: H01L21/768 ,  H01L21/311 ,  H01L23/532

    Abstract: Processing methods may be performed to remove unwanted materials from a substrate, such as an oxide footing. The methods may include forming an inert plasma within a processing region of a processing chamber. Effluents of the inert plasma may be utilized to modify a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor chamber. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.

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