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    Plasma processing system workpiece carrier with thermally isolated heater plate blocks
    1.
    发明授权
    Plasma processing system workpiece carrier with thermally isolated heater plate blocks 有权

    公开(公告)号：US11322337B2

    公开(公告)日：2022-05-03

    申请号：US15594297

    申请日：2017-05-12

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Dmitry Lubomirsky ,  Son T. Nguyen ,  Anh N. Nguyen ,  David Palagashvili

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

    Abstract: A workpiece carrier is described for a plasma processing chamber that has isolated heater plate blocks. In one example, a plasma processing system has a plasma chamber, a plasma source electrically coupled with a showerhead included within the plasma chamber, a workpiece holder in a processing region of the plasma chamber having a puck to carry a workpiece, wherein the workpiece holder includes a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, wherein each block includes a heater to heat a respective block of the heater plate, and wherein the workpiece holder includes a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate defining a cooling channel configured to distribute a heat transfer fluid to transfer heat from the cooling plate, and a temperature controller to independently control each heater.

    OXIDE ETCH SELECTIVITY SYSTEMS AND METHODS
    4.
    发明申请
    OXIDE ETCH SELECTIVITY SYSTEMS AND METHODS 有权
    氧化物选择性系统和方法

    公开(公告)号：US20170040175A1

    公开(公告)日：2017-02-09

    申请号：US15131256

    申请日：2016-04-18

    Applicant: Applied Materials, Inc.

    Inventor： Lin Xu ,  Zhijun Chen ,  Anchuan Wang ,  Son T. Nguyen

    IPC: H01L21/3065 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

    Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

    Abstract translation: 本技术的实施例可以包括蚀刻衬底的方法。 该方法可以包括在等离子体区域中击打等离子体放电。 该方法还可以包括将含氟前体流入等离子体区域以形成等离子体流出物。 等离子体流出物可能流入混合区域。 该方法可以进一步包括将含氢和氧的化合物引入混合区域，而不首先使含氢氧化合物进入等离子体区域。 此外，该方法可以包括使含氢和氧的化合物与混合区域中的等离子体流出物反应以形成反应产物。 反应产物可以流过分隔件中的多个开口到基底处理区域。 该方法还可以包括在衬底处理区域中用反应产物蚀刻衬底。

    Layered thin film heater and method of fabrication
    5.
    发明授权
    Layered thin film heater and method of fabrication 有权
    层状薄膜加热器及其制造方法

    公开(公告)号：US09499898B2

    公开(公告)日：2016-11-22

    申请号：US14195402

    申请日：2014-03-03

    Applicant: Applied Materials, Inc.

    Inventor： Son T. Nguyen ,  Dmitry Lubomirsky

    IPC: H05B3/68 ,  C23C14/04 ,  H01L21/67 ,  H01L21/687 ,  C23C14/18

    CPC classification number: C23C14/042 ,  C23C14/185 ,  H01L21/67103 ,  H01L21/68785

    Abstract: A method of forming thin film heater traces on a wafer chuck includes positioning a pattern, that forms openings corresponding to a desired layout of the heater traces, in proximity to the wafer chuck. The method includes sputtering a material toward the pattern and the wafer chuck such that a portion of the material passes through the openings and adheres to the wafer chuck to form the heater traces. A method of forming thin film heater traces on a wafer chuck includes sputtering a blanket layer of a material onto the wafer chuck, and patterning a photoresist layer utilizing photolithography. The photoresist layer covers the blanket layer in an intended layout of the heater traces, exposing the blanket layer in areas that are not part of the intended layout. The method removes the areas that are not part of the intended layout by etching, and removes the photoresist layer.

    Abstract translation: 在晶片卡盘上形成薄膜加热器迹线的方法包括在晶片卡盘附近定位形成与加热器迹线的期望布局相对应的开口的图案。 该方法包括将材料溅射到图案和晶片卡盘，使得材料的一部分通过开口并粘附到晶片卡盘以形成加热器迹线。 在晶片卡盘上形成薄膜加热器迹线的方法包括将材料的覆盖层溅射到晶片卡盘上，以及利用光刻图案化光致抗蚀剂层。 光致抗蚀剂层以加热器迹线的预期布局覆盖橡皮布层，将橡皮布层暴露在不是预期布局的一部分的区域中。 该方法通过蚀刻除去不是预期布局的一部分的区域，并除去光致抗蚀剂层。

    LOW TEMPERATURE ELECTROSTATIC CHUCK
    6.
    发明申请
    LOW TEMPERATURE ELECTROSTATIC CHUCK 有权

    公开(公告)号：US20250125181A1

    公开(公告)日：2025-04-17

    申请号：US18486072

    申请日：2023-10-12

    Applicant: Applied Materials, Inc.

    Inventor： Vijay D. Parkhe ,  Onkara Swamy Kora Siddaramaiah ,  David Benjaminson ,  Ryan Pakulski ,  Anh N. Nguyen ,  Son T. Nguyen ,  Prashanth Rao

    IPC: H01L21/683 ,  H01L21/67

    Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead positioned atop the body. The chambers may include an electrostatic chuck assembly disposed within the body. The assembly may include a puck that may include a first plate including an electrically insulating material and that defines a substrate support surface. The puck may include a multi-zone heating assembly thermally coupled with the first plate. The puck may include bipolar electrodes. The puck may include a second plate that defines cooling channels. The assembly may include an insulator beneath the second plate. The assembly may include a base plate beneath the insulator. The assembly may include a shaft that may include a heater rod coupled with the heating assembly. The shaft may include a cooling fluid lumen fluidly coupled with the cooling channels. The shaft may include a power rod electrically coupled with a bipolar electrode.

    Chamber apparatus for chemical etching of dielectric materials
    7.
    发明授权
    Chamber apparatus for chemical etching of dielectric materials 有权

    公开(公告)号：US11302520B2

    公开(公告)日：2022-04-12

    申请号：US14747367

    申请日：2015-06-23

    Applicant: Applied Materials, Inc.

    Inventor： Tien Fak Tan ,  Dmitry Lubomirsky ,  Kirby H. Floyd ,  Son T. Nguyen ,  David Palagashvili ,  Alexander Tam ,  Shaofeng Chen

    IPC: H01J37/32

    Abstract: Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.

    Oxide etch selectivity systems and methods
    8.
    发明授权
    Oxide etch selectivity systems and methods 有权

    公开(公告)号：US10424463B2

    公开(公告)日：2019-09-24

    申请号：US15131256

    申请日：2016-04-18

    Applicant: Applied Materials, Inc.

    Inventor： Lin Xu ,  Zhijun Chen ,  Anchuan Wang ,  Son T. Nguyen

    IPC: C23C16/40 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67

    Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

    SEMICONDUCTOR PROCESSING CHAMBER ADAPTER
    10.
    发明申请
    SEMICONDUCTOR PROCESSING CHAMBER ADAPTER 有权

    公开(公告)号：US20230005765A1

    公开(公告)日：2023-01-05

    申请号：US17366761

    申请日：2021-07-02

    Applicant: Applied Materials, Inc.

    Inventor： Son T. Nguyen ,  Kenneth D. Schatz ,  Anh N. Nguyen ,  Soonwook Jung ,  Ryan Pakulski ,  Anchuan Wang ,  Zihui Li

    IPC: H01L21/67 ,  H01J37/32

    Abstract: Exemplary semiconductor processing systems may include a processing chamber. The systems may include a remote plasma unit coupled with the processing chamber. The systems may include an adapter coupled between the remote plasma unit and the processing chamber. The adapter may be characterized by a first end and a second end opposite the first end. The remote plasma unit may be coupled with the adapter at the first end. The adapter may define a first central channel extending more than 50% of a length of the adapter from the first end of the adapter. The adapter may define a second central channel extending less than 50% of the length of the adapter from the second end of the adapter. The adapter may define a transition between the first central channel and the second central channel.

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