公开(公告)号：US06316965B1

公开(公告)日：2001-11-13

申请号：US09593809

申请日：2000-06-15

申请人： Berend T. Jonker ,  Richard Magno

发明人： Berend T. Jonker ,  Richard Magno

IPC分类号： H03K1910

CPC分类号： B82Y10/00 ,  H03K3/315 ,  H03K19/10

摘要： A circuit includes at least one negative differential resistance (NDR) device and at least one magnetic device having reversibly variable resistance, wherein the negative differential resistance device and the magnetic device are operatively connected so that changing the resistance of the magnetic device changes the current-voltage response characteristics of the circuit. NDR devices and magnetic devices can be arranged to form multiple value logic (MVL) cells and monostable-bistable transition logic elements (MOBILE), and these logic cells can form the components of a field programmable gate array.

摘要翻译： 电路包括至少一个负差分电阻（NDR）装置和至少一个具有可逆电阻的磁性装置，其中负差动电阻装置和磁性装置可操作地连接，使得磁性装置的电阻改变电流 - 电路的电压响应特性。 NDR器件和磁性器件可以被布置成形成多值逻辑（MVL）单元和单稳态双稳态转换逻辑元件（MOBILE），并且这些逻辑单元可以形成现场可编程门阵列的组件。

公开(公告)号：US09673047B2

公开(公告)日：2017-06-06

申请号：US14872308

申请日：2015-10-01

申请人： Connie H. Li ,  Glenn G. Jernigan ,  Berend T. Jonker ,  Ramasis Goswami ,  Carl S. Hellberg

发明人： Connie H. Li ,  Glenn G. Jernigan ,  Berend T. Jonker ,  Ramasis Goswami ,  Carl S. Hellberg

IPC分类号： H01L29/161 ,  H01L21/02 ,  H01L29/04

CPC分类号： H01L29/1608 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02444 ,  H01L21/02447 ,  H01L21/02513 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02587 ,  H01L21/02592 ,  H01L21/02612 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/30604 ,  H01L21/324 ,  H01L29/04 ,  H01L29/045

摘要： A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C—SiC buffer layer on Si(001) comprising a porous buffer layer of 3C—SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.

公开(公告)号：US20160118465A1

公开(公告)日：2016-04-28

申请号：US14872308

申请日：2015-10-01

申请人： Connie H. Li ,  Glenn G. Jernigan ,  Berend T. Jonker ,  Ramasis Goswami ,  Carl S. Hellberg

发明人： Connie H. Li ,  Glenn G. Jernigan ,  Berend T. Jonker ,  Ramasis Goswami ,  Carl S. Hellberg

IPC分类号： H01L29/16 ,  H01L29/04 ,  H01L21/306 ,  H01L21/02 ,  H01L21/324

CPC分类号： H01L29/1608 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02444 ,  H01L21/02447 ,  H01L21/02513 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02587 ,  H01L21/02592 ,  H01L21/02612 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/30604 ,  H01L21/324 ,  H01L29/04 ,  H01L29/045

摘要： A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C-SiC buffer layer on Si(001) comprising a porous buffer layer of 3C-SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.

摘要翻译： 一种在Si衬底上制造SiC缓冲层的方法，包括在Si（001）衬底上沉积无定形碳层，通过控制非晶碳层沉积步骤的时间来控制无定形碳层的厚度，并形成 沉积膜。 Si（001）上的3C-SiC缓冲层包括在Si衬底上的3C-SiC的多孔缓冲层，其中多孔缓冲层通过固态反应产生。

公开(公告)号：US20150303059A1

公开(公告)日：2015-10-22

申请号：US14629939

申请日：2015-02-24

申请人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

发明人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/16 ,  H01L29/45 ,  H01L21/285 ,  H01L21/308

CPC分类号： H01L29/66984 ,  H01L21/02115 ,  H01L21/02227 ,  H01L21/02293 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/043 ,  H01L21/3081 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/45

摘要： This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

摘要翻译： 本公开描述了制造基于隧道势垒的电子器件的方法，其中隧道势垒和输送通道由相同的材料 - 石墨烯制成。 使用单层化学改性石墨烯片作为另一单层石墨烯片上的隧道势垒产生同质外延隧道势垒/输送装置。 该装置在异质外延装置上显示增强的自旋电子性质，并且首先将石墨烯用作隧道屏障和通道。

公开(公告)号：US4823177A

公开(公告)日：1989-04-18

申请号：US213862

申请日：1988-06-30

申请人： Gary A. Prinz ,  James J. Krebs ,  Berend T. Jonker

发明人： Gary A. Prinz ,  James J. Krebs ,  Berend T. Jonker

IPC分类号： H01F1/03 ,  H01F1/40 ,  H01F10/193 ,  H01L43/00 ,  H01L43/10 ,  H01L41/06

CPC分类号： H01L43/10 ,  H01F1/401 ,  H01F10/1936 ,  H01L43/00

摘要： A device and method for magnetizing a material having a magnetic constituent. In a preferred embodiment, a ferromagnetic film and a first film are selectively deposited at first and second locations on the material. The ferromagnetic film is magnetized in a first direction. A voltage source is coupled between the ferromagnetic and first films to enable a spin-polarized current to flow through the material to magnetize the material.

摘要翻译： 一种用于磁化具有磁性成分的材料的装置和方法。 在优选实施例中，在材料的第一和第二位置选择性地沉积铁磁膜和第一膜。 铁磁膜沿第一方向磁化。 电压源耦合在铁磁和第一膜之间，以使自旋极化电流流过材料以磁化材料。

公开(公告)号：US20170194468A1

公开(公告)日：2017-07-06

申请号：US15463229

申请日：2017-03-20

申请人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

发明人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

IPC分类号： H01L29/66 ,  H01L21/04 ,  H01L29/45 ,  H01L29/167 ,  H01L21/02 ,  H01L29/16

CPC分类号： H01L29/66984 ,  H01L21/02115 ,  H01L21/02227 ,  H01L21/02293 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/043 ,  H01L21/3081 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/45

摘要： This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

公开(公告)号：US09698254B1

公开(公告)日：2017-07-04

申请号：US15463229

申请日：2017-03-20

申请人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

发明人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/16 ,  H01L29/45 ,  H01L29/167 ,  H01L21/04

CPC分类号： H01L29/66984 ,  H01L21/02115 ,  H01L21/02227 ,  H01L21/02293 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/043 ,  H01L21/3081 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/45

摘要： This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

公开(公告)号：US4828935A

公开(公告)日：1989-05-09

申请号：US176115

申请日：1988-03-30

申请人： Berend T. Jonker ,  Gary A. Prinz ,  James J. Krebs

发明人： Berend T. Jonker ,  Gary A. Prinz ,  James J. Krebs

IPC分类号： H01L21/314

CPC分类号： H01L21/314 ,  Y10S438/958 ,  Y10T428/12528 ,  Y10T428/12681

摘要： A passivating or insulating layer is described for semiconductor substrat The passivating layer is of the formula Zn.sub.1-x-y M.sub.x Q.sub.y Se:D where 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, M and Q represent different specified elements and D represents a dopant. It is prefered that M and Q are Fe or Mn. The substrate is preferably a III-V semiconductor compound. The devices are capable of rapid switching among other uses.

摘要翻译： 半导体衬底描述钝化或绝缘层。 钝化层具有式Zn1-x-yMxQySe：D，其中0≤x≤1,0≤y≤1，M和Q表示不同的特定元素，D表示掺杂剂。 M和Q优选为Fe或Mn。 基板优选为III-V族半导体化合物。 这些设备能够在其他用途​​之间快速切换。

公开(公告)号：US09614063B2

公开(公告)日：2017-04-04

申请号：US14629939

申请日：2015-02-24

申请人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

发明人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

IPC分类号： H01L29/66 ,  H01L21/308 ,  H01L29/16 ,  H01L29/45 ,  H01L29/423 ,  H01L21/02

CPC分类号： H01L29/66984 ,  H01L21/02115 ,  H01L21/02227 ,  H01L21/02293 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/043 ,  H01L21/3081 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/45

摘要： This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

公开(公告)号：US20150299850A1

公开(公告)日：2015-10-22

申请号：US14657665

申请日：2015-03-13

申请人： Enrique Cobas ,  Olaf M. T. van 't Erve ,  Adam L. Friedman ,  Berend T. Jonker

发明人： Enrique Cobas ,  Olaf M. T. van 't Erve ,  Adam L. Friedman ,  Berend T. Jonker

IPC分类号： C23C16/26 ,  C23C16/455 ,  C23C16/46 ,  C23C16/44

CPC分类号： C23C16/26 ,  C23C16/0209 ,  C23C16/56 ,  G11C11/161 ,  G11C2213/35

摘要： A method of making a graphene spin filter device by chemical vapor deposition comprising providing a first crystalline ferromagnetic metal surface, performing chemical vapor deposition and growing a graphene film on the first ferromagnetic metal surface, and depositing a second ferromagnetic film on the graphene film. A graphene spin filter device wherein the graphene is grown by chemical vapor deposition comprising a first crystalline ferromagnetic metal surface, a graphene film grown by chemical vapor deposition on the first ferromagnetic metal surface, and a second ferromagnetic film on the graphene film.

摘要翻译： 一种通过化学气相沉积制造石墨烯自旋过滤器装置的方法，包括提供第一结晶铁磁金属表面，进行化学气相沉积并在第一铁磁金属表面上生长石墨烯膜，以及在石墨烯膜上沉积第二铁磁膜。 一种石墨烯自旋过滤器装置，其中通过化学气相沉积生长石墨烯，其包括第一结晶铁磁金属表面，通过化学气相沉积在第一强磁性金属表面上生长的石墨烯膜和在石墨烯膜上的第二铁磁膜。