-
1.发明授权公开(公告)号：US10985059B2
公开(公告)日：2021-04-20
申请号：US16178306
申请日：2018-11-01
IPC分类号： H01L21/768 , H01L21/02 , H01L23/532 , H01L39/24
摘要： A method is provided of forming a superconductor device interconnect structure. The method comprises forming a first dielectric layer overlying a substrate and forming a superconducting interconnect element in the first dielectric layer. The superconducting interconnect element includes a top surface aligned with a top surface of the first dielectric layer to form a first interconnect layer. The superconductor device interconnect structure is moved into a dielectric deposition chamber. The method further comprises performing a cleaning process on a top surface of the first interconnect layer in the dielectric deposition chamber to remove oxidization from a top surface of the first interconnect layer, and depositing a second dielectric layer over the first interconnect layer in the dielectric deposition chamber.
-
公开(公告)号：US09780285B1
公开(公告)日：2017-10-03
申请号：US15238375
申请日：2016-08-16
CPC分类号： H01L39/223 , H01L39/025 , H01L39/2493
摘要： A method is provided of forming a superconductor device interconnect structure. The method includes forming a first dielectric layer overlying a substrate, and forming a base electrode in the first dielectric layer with the base electrode having a top surface aligned with the top surface of the first dielectric layer. The method further comprises forming a Josephson junction (JJ) over the base electrode, depositing a second dielectric layer over the JJ, the base electrode and the first dielectric layer, and forming a first contact through the second dielectric layer to the base electrode to electrically couple the first contact to a first end of the JJ, and a second contact through the second dielectric layer to a second end of the JJ.
-
3.发明授权公开(公告)号：US11522118B2
公开(公告)日：2022-12-06
申请号：US16738790
申请日：2020-01-09
申请人： Christopher F. Kirby , Michael Rennie , Daniel J. O'Donnell , Aurelius L. Graninger , Aaron A. Pesetski
发明人： Christopher F. Kirby , Michael Rennie , Daniel J. O'Donnell , Aurelius L. Graninger , Aaron A. Pesetski
IPC分类号： H01L21/00 , H01L39/24 , H01L23/522 , H01L23/532
摘要： A method of forming a superconductor structure is disclosed. The method comprises forming a superconductor line in a first dielectric layer, forming a resistor with an end coupled to an end of the superconductor line, and forming a second dielectric layer overlying the resistor. The method further comprises etching a tapered opening through the second dielectric layer to the resistor, and performing a contact material fill with a normal metal material to fill the tapered opening and form a normal metal connector coupled to the resistor.
-
公开(公告)号：US10312142B2
公开(公告)日：2019-06-04
申请号：US15362400
申请日：2016-11-28
IPC分类号： H01L21/00 , H01L21/768 , H01L21/02 , H01L21/027 , H01L21/311 , H01L21/321 , H01L23/522 , H01L23/528 , H01L23/532 , H01L23/66 , H01L39/12 , H01L39/24 , H01P3/08 , H01P11/00
摘要： A method of forming a superconductor structure is provided. The method comprises forming a superconducting element in a first dielectric layer that has a top surface aligned with the top surface of the first dielectric layer, forming a second dielectric layer over the first dielectric layer and the superconducting element, and forming an opening in the second dielectric layer to a top surface of the superconducting element. The method also comprises performing a cleaning process on the top surface of the superconducting element to remove oxides formed on the top surface of the superconducting element at a first processing stage, forming a protective barrier over the top surface of the superconducting element, and moving the superconductor structure to a second processing stage for further processing.
-
公开(公告)号：US10003005B2
公开(公告)日：2018-06-19
申请号：US15244827
申请日：2016-08-23
CPC分类号： H01L39/2493 , H01L39/025 , H01L39/223
摘要： A method is provided of forming a superconductor device interconnect structure. The method includes forming a first high temperature dielectric layer overlying a substrate, forming a base electrode in the first high temperature dielectric layer with the base electrode having a top surface aligned with the top surface of the first high temperature dielectric layer, and depositing a second high temperature dielectric layer over the first high temperature dielectric layer and the base electrode. The method further comprises forming a first contact through the second dielectric layer to a first end of the base electrode, forming a Josephson junction (JJ) overlying and in contact with the first contact, and forming a second contact through the second dielectric layer to a second end of the base electrode.
-
公开(公告)号：US10763419B2
公开(公告)日：2020-09-01
申请号：US15612326
申请日：2017-06-02
IPC分类号： H01L39/24 , H01L21/02 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/285
摘要： A method of forming a superconductor interconnect structure is disclosed. The method includes forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further includes depositing a superconducting metal in the interconnect opening, by performing a series of superconducting deposition and cooling processes to maintain a chamber temperature at or below a predetermined temperature until the superconducting metal has a desired thickness, to form a superconducting element in the superconductor interconnect structure.
-
公开(公告)号：US10608159B2
公开(公告)日：2020-03-31
申请号：US15351755
申请日：2016-11-15
摘要： A method of forming a superconductor device structure is disclosed. The method comprises forming a base electrode in a first dielectric layer, forming a junction material stack over the base electrode, forming a hardmask over the junction material stack, etching away a portion of the junction material stack to form a Josephson junction (JJ) over the base electrode, and depositing a second dielectric layer over the hardmask, the JJ, the base electrode and the first dielectric layer. The method additionally comprises forming a first contact through the second dielectric layer to the base electrode to electrically couple the first contact to a first end of the JJ, and forming a second contact through the second dielectric layer and the hardmask to electrically coupled the second contact to a second end of the JJ.
-
公开(公告)号：US10312141B2
公开(公告)日：2019-06-04
申请号：US15238394
申请日：2016-08-16
IPC分类号： H01L21/768 , H01L23/532 , H01L21/02
摘要： A method is provided of forming a superconductor device interconnect structure. The method includes forming a first dielectric layer overlying a substrate, and forming a superconducting interconnect element in a first dielectric layer, such that the superconducting interconnect element has a top surface aligned with a top surface of the first dielectric layer to form a first interconnect layer. The method also includes performing a plasma clean on a top surface of the first interconnect layer, and depositing a second dielectric layer over the first dielectric layer.
-
公开(公告)号：US10276504B2
公开(公告)日：2019-04-30
申请号：US15597565
申请日：2017-05-17
申请人： Vivien Luu , Christopher F. Kirby , Brian Wagner , Michael Rennie
发明人： Vivien Luu , Christopher F. Kirby , Brian Wagner , Michael Rennie
IPC分类号： H01L23/532 , H01L21/00 , H01L23/522 , H01L21/768 , H01L21/02 , H01L39/24
摘要： A method is provided of forming a superconductor interconnect structure. The method comprises forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further comprises performing a cleaning process on the top surface of the dielectric layer and in the interconnect opening while in the deposition chamber, and depositing a superconducting metal in the interconnect opening while in the deposition chamber to form a superconducting element in the superconductor interconnect structure.
-
公开(公告)号：US09252182B2
公开(公告)日：2016-02-02
申请号：US13603788
申请日：2012-09-05
IPC分类号： H01L31/0216 , H01L31/0232 , H01L27/146 , G01J5/08
CPC分类号： H01L27/1467 , G01J5/0853 , H01L31/02161 , H01L31/0232 , H01L31/02327
摘要： Photo-conducting infrared sensors are provided including a substrate (e.g., silicon) with one or more trenches formed on a first surface. An infrared-reflective film can be deposited directly or indirectly onto and conforming in shape with the first surface of the substrate. A lead chalcogenide film can be deposited directly or indirectly over the top of the infrared-reflective film and conforming in shape with the first surface of the substrate. Accordingly, the infrared-reflective film is directly or indirectly sandwiched between the substrate and the lead chalcogenide film.
摘要翻译： 提供了导电红外传感器，其包括具有形成在第一表面上的一个或多个沟槽的衬底（例如硅）。 可以将红外线反射膜直接或间接沉积到基板的第一表面上并与其成形。 铅硫族化物膜可以直接或间接沉积在红外反射膜的顶部上并且与基底的第一表面形状一致。 因此，红外线反射膜直接或间接夹在基板和铅硫族化物膜之间。
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.024 秒)
