公开(公告)号：US20150259572A1

公开(公告)日：2015-09-17

申请号：US14203621

申请日：2014-03-11

Applicant: Cabot Microelectronics Corporation

Inventor： Steven GRUMBINE ,  Jeffrey DYSARD ,  Lin FU ,  William WARD ,  Glenn WHITENER

IPC: C09G1/02 ,  H01L21/306

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/40 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US20150102012A1

公开(公告)日：2015-04-16

申请号：US14051121

申请日：2013-10-10

Applicant: Cabot Microelectronics Corporation

Inventor： Brian REISS ,  Jakub NALASKOWSKI ,  Viet LAM ,  Renhe JIA ,  Jeffrey DYSARD

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02013 ,  H01L21/30625 ,  H01L21/31053

Abstract: The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are ceria particles, second abrasive particles, wherein the second abrasive particles are ceria particles, surface-modified silica particles, or organic particles, a pH-adjusting agent, and an aqueous carrier. The polishing compositions also exhibit multimodal particle size distributions.

Abstract translation: 本发明提供化学 - 机械抛光组合物和用化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 抛光组合物包括第一磨料颗粒，其中第一磨料颗粒是二氧化铈颗粒，第二磨料颗粒，其中第二磨料颗粒是二氧化铈颗粒，表面改性二氧化硅颗粒或有机颗粒，pH调节剂和含水载体 。 抛光组合物还显示多峰粒度分布。

公开(公告)号：US20160089763A1

公开(公告)日：2016-03-31

申请号：US14965168

申请日：2015-12-10

Applicant: Cabot Microelectronics Corporation

Inventor： Steven GRUMBINE ,  Jeffrey DYSARD ,  Lin FU ,  William WARD ,  Glenn WHITENER

IPC: B24B37/04 ,  C23F1/40 ,  H01L21/321 ,  C09G1/02

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/40 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

公开(公告)号：US20150259573A1

公开(公告)日：2015-09-17

申请号：US14203647

申请日：2014-03-11

Applicant: Cabot Microelectronics Corporation

Inventor： Steven GRUMBINE ,  Jeffrey DYSARD ,  Lin FU ,  William WARD ,  Glenn WHITENER

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有至少6mV的永久正电荷的胶态二氧化硅磨料和在该溶液中的聚阳离子胺化合物 液体载体。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US20170051181A1

公开(公告)日：2017-02-23

申请号：US15346835

申请日：2016-11-09

Applicant: Cabot Microelectronics Corporation

Inventor： Steven GRUMBINE ,  Shoutian LI ,  William WARD ,  Pankaj SINGH ,  Jeffrey DYSARD

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04 ,  H01L21/3105

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

Abstract translation: 本发明的方法包括用本发明的抛光组合物对基材进行化学机械抛光，所述抛光组合物包含液体载体和已经用化合物处理的磨料颗粒。

公开(公告)号：US20150267083A1

公开(公告)日：2015-09-24

申请号：US14222736

申请日：2014-03-24

Applicant: Cabot Microelectronics Corporation

Inventor： William WARD ,  Glenn WHITENER ,  Steven GRUMBINE ,  Jeffrey DYSARD

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09G1/04 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, first and second colloidal silica abrasives dispersed in the liquid carrier, and an iron containing accelerator. The first colloidal silica abrasive and the second colloidal silica abrasive each have a permanent positive charge of at least 10 mV. An average particle size of the second silica abrasive is at least 20 nanometers greater than an average particle size of the first silica abrasive. A method for chemical mechanical polishing a substrate including a tungsten layer is further disclosed. The method may include contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的第一和第二胶体二氧化硅研磨剂和含铁促进剂。 第一胶体二氧化硅研磨剂和第二胶态二氧化硅磨料各自具有至少10mV的永久正电荷。 第二硅石研磨剂的平均粒度比第一二氧化硅研磨剂的平均粒径大至少20纳米。 还公开了一种用于化学机械研磨包括钨层的衬底的方法。 该方法可以包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光基底。

公开(公告)号：US20130224955A1

公开(公告)日：2013-08-29

申请号：US13846126

申请日：2013-03-18

Applicant: Cabot Microelectronics Corporation

Inventor： Vlasta BRUSIC ,  Christopher THOMPSON ,  Jeffrey DYSARD

IPC: H01L21/306

CPC classification number: H01L21/30625 ,  B24B37/044 ,  B24D3/00 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F3/03 ,  C23F3/06

Abstract: The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive consisting of alumina particles optionally treated with a polymer, an α-hydroxycarboxylic acid, an oxidizing agent that oxidizes at least one metal, polyacrylic acid, optionally, a calcium-containing compound, optionally, a biocide, optionally, a pH adjusting agent, and water. The method uses the composition to chemically-mechanically polish a substrate.

Abstract translation: 本发明提供了用于平坦化或抛光基材的组合物和方法。 该组合物包含由任选用聚合物氧化的氧化铝颗粒，α-羟基羧酸，氧化至少一种金属的氧化剂，任选的含钙化合物，任选的含钙化合物，任选的杀生物剂，任选地， pH调节剂和水。 该方法使用组合物对基材进行化学机械抛光。