公开(公告)号：US10315285B2

公开(公告)日：2019-06-11

申请号：US15091275

申请日：2016-04-05

Applicant: Cabot Microelectronics Corporation

Inventor： Tong Li ,  Michael White ,  Selvaraj Palanisamy Chinnathambi ,  Ke Zhang

IPC: B24B37/24 ,  C09G1/04

Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate, such as a nickel-phosphorous substrate. The composition contains water, silica particles, a first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol, a second alcohol in the form of polyvinyl alcohol, a nickel complexing agent, and optionally hydrogen peroxide, pH adjuster, and/or biocide. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

公开(公告)号：US09534147B2

公开(公告)日：2017-01-03

申请号：US14515723

申请日：2014-10-16

Applicant: Cabot Microelectronics Corporation

Inventor： Hon Wu Lau ,  Selvaraj Palanisamy Chinnathambi ,  Ke Zhang

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/306 ,  G11B5/84

CPC classification number: C09G1/02 ,  B24B37/044 ,  G11B5/8404 ,  H01L21/30625

Abstract: The invention provides a polishing composition that contains (a) α-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.

Abstract translation: 本发明提供了一种抛光组合物，其含有（a）平均粒度为约250nm至约300nm的α-氧化铝颗粒，（b）每种型氧化剂，（c）络合剂，其中络合 药剂是氨基酸或有机酸，和（d）水。 本发明还提供了用抛光组合物抛光基底，特别是镍 - 磷基底的方法。

公开(公告)号：US20150114929A1

公开(公告)日：2015-04-30

申请号：US14515723

申请日：2014-10-16

Applicant: Cabot Microelectronics Corporation

Inventor： Hon Wu LAU ,  Selvaraj Palanisamy Chinnathambi ,  Ke Zhang

IPC: C09G1/02 ,  G11B5/84 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  G11B5/8404 ,  H01L21/30625

Abstract: The invention provides a polishing composition that contains (a) α-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.

Abstract translation: 本发明提供了一种抛光组合物，其含有（a）平均粒度为约250nm至约300nm的α-氧化铝颗粒，（b）每种型氧化剂，（c）络合剂，其中络合 药剂是氨基酸或有机酸，和（d）水。 本发明还提供了用抛光组合物抛光基底，特别是镍 - 磷基底的方法。

公开(公告)号：US10479911B1

公开(公告)日：2019-11-19

申请号：US16000062

申请日：2018-06-05

Applicant: Cabot Microelectronics Corporation

Inventor： Selvaraj Palanisamy Chinnathambi

IPC: C09G1/02 ,  C09G1/04 ,  C09G1/18 ,  B24B37/04 ,  G11B5/64 ,  G11B5/84 ,  C09K3/14

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising colloidal silica and fused silica, (b) a compound of formula (I) or a combination of a compound of formula (II) and a hydrophobic organic compound, (c) an amino acid, (d) hydrogen peroxide, and (e) water, wherein the polishing composition has a pH of about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.

公开(公告)号：US09469787B2

公开(公告)日：2016-10-18

申请号：US14881837

申请日：2015-10-13

Applicant: Cabot Microelectronics Corporation

Inventor： Ke Zhang ,  Selvaraj Palanisamy Chinnathambi

IPC: C09G1/02 ,  B24B37/11

CPC classification number: C09G1/02 ,  B24B37/11

Abstract: A chemical mechanical polishing (CMP) composition for planarizing a nickel phosphorus (NiP) substrate comprises a suspension of colloidal silica particles and fused silica particles in an acidic aqueous carrier containing hydrogen peroxide, in which the concentration of the fused silica particles is less than or equal to the concentration of the colloidal silica particles. In some embodiments, the CMP composition includes a primary complexing agent, a secondary complexing agent, and a metal ion such as ferric ion, which is capable of reversible oxidation and reduction in the presence of hydrogen peroxide and NiP.

Abstract translation: 用于平面化镍磷（NiP）衬底的化学机械抛光（CMP）组合物包括胶体二氧化硅颗粒和熔融二氧化硅颗粒在含有过氧化氢的酸性含水载体中的悬浮液，其中熔融二氧化硅颗粒的浓度小于或等于 等于胶体二氧化硅颗粒的浓度。 在一些实施方案中，CMP组合物包括主要络合剂，仲络合剂和金属离子如铁离子，其能够在过氧化氢和NiP存在下能够可逆地氧化和还原。

公开(公告)号：US09909032B2

公开(公告)日：2018-03-06

申请号：US14156201

申请日：2014-01-15

Applicant: Cabot Microelectronics Corporation

Inventor： Selvaraj Palanisamy Chinnathambi ,  Michael White

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/306 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09C1/06 ,  C09K13/00 ,  C09K13/06 ,  G11B5/84 ,  C09C1/30

CPC classification number: C09G1/02 ,  B24B1/00 ,  C01P2004/64 ,  C09C1/06 ,  C09C1/3054 ,  C09C1/3072 ,  C09C1/309 ,  C09G1/00 ,  C09G1/04 ,  C09K3/1445 ,  C09K13/00 ,  C09K13/06 ,  G11B5/8404 ,  H01L21/30625 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition containing aluminate-modified silica particles, a polyacrylamide, a heterocyclic film-forming agent, and water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.